1. Removal behavior and performance analysis of defective silicon carbide in nano-grinding
- Author
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Hongjing Qiu, Xuezhi Wang, Jian Liu, and Tiancheng Ai
- Subjects
Materials science ,business.industry ,Hydrostatic pressure ,General Engineering ,Diamond ,engineering.material ,Grinding ,chemistry.chemical_compound ,Semiconductor ,chemistry ,Nano ,engineering ,Silicon carbide ,von Mises yield criterion ,Composite material ,business ,Resultant force - Abstract
The process of grinding silicon carbide(SiC) single crystals containing defects with a single diamond was simulated using molecular dynamics(MD) software. A 4H–SiC simulated workpiece—with transverse, vertical, 45°, and 135° defects—and a diamond tool were established through molecular dynamics, in addition, the models of different depth defects were established. The grinding removal behavior of 4H–SiC in different directions and positions was analyzed. The simulation results demonstrate that there is an elastic deformation interval during 4H–SiC grinding, whereby the defect within the interval will be filled and the defect outside the interval will not. Meanwhile, the resultant force curve, von Mises stress distribution, hydrostatic pressure distribution, surface appearance and temperature distribution were also analyzed. This research has theoretical significance in the optimization of semiconductor SiC process parameters.
- Published
- 2021