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Your search keyword '"Zhang, Guangyin"' showing total 5 results
Start Over Author "Zhang, Guangyin" Topic business.industry
5 results on '"Zhang, Guangyin"'

1. Detection Technology of H2S and CO2 Based on Fiber Amplifier Enhanced Photoacoustic Spectroscopy

Author

张广寅 Zhang Guangyin, 田宇 Tian Yu, 马凤翔 Ma Fengxiang, 赵跃 Zhao Yue, 郭珉 Guo Min, 李辰溪 Li Chenxi, 陈珂 Chen Ke, 张博 Zhang Bo, and 杨蓓蕾 Yang Beilei

Subjects
Materials science, business.industry, Fiber amplifier, Optoelectronics, business, Photoacoustic spectroscopy, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Published
2021

2. A Novel IGBT Structure With Floating N-Doped Buried Layer in P-Base to Suppress Latch-Up

Author

Yangjun Zhu, Ji Tan, Shen Qianxing, Lu Shuojin, Zhang Guangyin, Yuan Teng, Tian Xiaoli, and Yang Fei

Subjects
010302 applied physics, Gate turn-off thyristor, Materials science, business.industry, 020208 electrical & electronic engineering, Bipolar junction transistor, Electrical engineering, Thyristor, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Insulated-gate bipolar transistor, 01 natural sciences, Electronic, Optical and Magnetic Materials, Current injection technique, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Hardware_ARITHMETICANDLOGICSTRUCTURES, Electrical and Electronic Engineering, Current (fluid), business, Current density, Hardware_LOGICDESIGN, Common emitter
Abstract

The insulated-gate bipolar transistor (IGBT) has a parasitic thyristor. Latch-up can occur when the current density exceeds a particular current density. Conventional methods employed to increase the latching current density will lead to some other performance degradations. To overcome these problems and further increase the latching current density of IGBT, a novel IGBT with a floating N-doped buried layer in P-base is proposed. By implanting a floating N-doped buried layer in the P-base, the hole current flowing underneath the N+ emitter can be reduced significantly. Thus, the current density that is needed to trigger the latch-up of the parasitic thyristor increases. Numerical simulation results show that the proposed IGBT can increase the latching current density by more than 100% without compromising the output and switching characteristics when compared with the conventional IGBT.

Published
2016

3. Spectral Properties of Parametric Oscillator Based on Periodically Poled MgO-Doped Lithium Niobate

Author

王亚楠 Wang Yanan, 颜彩繁 Yan Caifan, 陈少甫 Chen Shaofu, and 张光寅 Zhang Guangyin

Subjects
chemistry.chemical_compound, Materials science, chemistry, business.industry, Lithium niobate, Doping, Spectral properties, Optoelectronics, Electrical and Electronic Engineering, Parametric oscillator, business, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Published
2008

4. Study on Infrared Spectrum of Optical Parametric Oscillator

Author

王宏杰 Wang Hongjie, 颜彩繁 Yan Caifan, 金帅 Jin Shuai, and 张光寅 Zhang Guangyin

Subjects
Physics, Optics, Infrared, business.industry, Optical parametric oscillator, Electrical and Electronic Engineering, business, Optical parametric amplifier, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Published
2011

5. Two Different Kinds of Dynamic Stable Resonator and Their General Criteria

Author

Zhang Guangyin

Subjects
Physics, Resonator, Optics, Coincident, business.industry, business, Electronic, Optical and Magnetic Materials
Abstract

Two different kinds of dynamic stable resonator—the resonator insensitive to axial shift of the mirrors of the resonator, and the resonator insensitive to thermo-perturbation of the thermo-lens in the resonator—and their general criteria are distinguished in detail. At the same time both coincident conditions are also discussed.

Published
1981

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