1. Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes.
- Author
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Menou, N., Popovici, M., Clima, S., Opsomer, K., Polspoel, W., Kaczer, B., Rampelberg, G., Tomida, K., Pawlak, M. A., Detavernier, C., Pierreux, D., Swerts, J., Maes, J. W., Manger, D., Badylevich, M., Afanasiev, V., Conard, T., Favia, P., Bender, H., and Brijs, B.
- Subjects
STRONTIUM compounds ,CAPACITORS ,TITANIUM dioxide ,ELECTRIC properties of thin films ,INTERFACES (Physical sciences) ,THERMAL properties - Abstract
In this work, the physical and electrical properties of Sr
x Ti1-x Oy (STO)-based metal-insulator-metal capacitors (MIMcaps) with various compositions are studied in detail. While most recent studies on STO were done on noblelike metal electrodes (Ru, Pt), this work focuses on a low temperature (250 °C) atomic layer deposition (ALD) process, using an alternative precursor set and carefully optimized processing conditions, enabling the use of low-cost, manufacturable-friendly TiN electrodes. Physical analyses show that the film crystallization temperature, its texture and morphology strongly depends on the Sr/Ti ratio. Such physical variations have a direct impact on the electric properties of Srx Ti1-x Oy based capacitors. It is found that Sr-enrichment result in a monotonous decrease in the dielectric constant and leakage current as predicted by ab initio calculations. The intercept of the EOT vs physical thickness plot further indicates that increasing the Sr-content at the film interface with the bottom TiN would result in lower interfacial equivalent-oxide thickness. [ABSTRACT FROM AUTHOR]- Published
- 2009
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