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In this work, we have fabricated and thoroughly characterized dielectric-stacked memory devices with AlO-CuO composites as the charge trapping layer which are prepared by using atomic layer deposition and RF-magnetron sputtering techniques. The devices exhibit a large memory window of 13.27 V and a density of the trapped charges of 9.37 × 10 cm at a working voltage of ±11 V. The microstructural observations by using high resolution transmission electron microscopy and the analysis on X-ray photoelectron spectroscopy indicate that the strong charge-trapping ability of AlO-CuO composite should be ascribed to the occurrence of Cu, resulted by the inter-diffusion at the interface of CuO/AlO. Such an interesting composite layer has very attractive application in nonvolatile memory. [ABSTRACT FROM AUTHOR]

Unipolar resistance switching characteristics are observed in fully transparent indium-doped SnO2/MgO/F-doped SnO2 device. In addition to the transmittance above 90% for visible light, the devices show good endurance and retention characteristics. The resistance-temperature relation curves and the corresponding Arrhenius plot confirm the semiconducting conduction behavior of both the high resistance state and the low resistance state. Experimental results indicate that Ohmic and trap controlled space-charge-limited conduction mechanism controlled the charge carriers transport at the low voltage and high voltage regions, respectively. This work presents a candidate material MgO for the application on the future see-through electronic devices. [ABSTRACT FROM AUTHOR]