1. Comparison The Effect of t-BuOH and H2O as O Precursors on ZnO Films Grown by MOCVD Method
- Author
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郑有炓 Zheng You-dou, 顾然 Gu Ran, 顾书林 Gu Shu-lin, 朱顺明 Zhu Shun-ming, 朱振邦 Zhu Zhen-bang, and 黄时敏 Huang Shi-min
- Subjects
Radiation ,Materials science ,chemistry.chemical_element ,Nanotechnology ,Condensed Matter Physics ,Oxygen ,Electronic, Optical and Magnetic Materials ,Gas phase ,Crystal ,Chemical engineering ,chemistry ,Growth rate ,Metalorganic vapour phase epitaxy ,Lower activity - Abstract
The behaviors of ZnO films using t-BuOH and H2O as oxygen precursors were investigated.Despite the fact that both t-BuOH and H2O are of lower activity,the ZnO epilayer has a higher growth rate when t-BuOH is used as oxygen precursor,due to its more effective prevention of the gas phase pre-reaction.Compared with H2O,ZnO epilayer get a better crystal quality by using t-BuOH as oxygen precursor.And the Hall mobility up to 37.0 cm2·V-1·s-1 is achieved in the flim where t-BuOH is used as oxygen precursor.The research shows that t-BuOH is more suitable for oxygen precursor of the MOCVD growth of ZnO epilayer.
- Published
- 2012