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Superconductors in proximity to topological insulators (TIs) have the potential to unlock exotic quantum phenomena, such as Majorana fermions. Quasi-one-dimensional structures are particularly suited to host these quantum states. Despite the growth of TI nanostructures being relatively straightforward, the in situ synthesis of superconductor-TI structures has been challenging. Here, we present a systematic study of the growth of the s-wave superconductor Sn on the TI Bi2Te3 by physical vapor transport. If Sn does not enter the Bi2Te3 lattice as a dopant, two types of structures are formed: Sn nanoparticles, that cover Bi2Te3 plates and belts in a cloud-like shape, and thin Sn layers on Bi2Te3 plates, that appear in puddle-like recessions. These heterostructures have potential applications as novel quantum devices. The in-situ synthesis of superconductor-topological insulator (TI) heterostructures has been challenging. Here, for the first time, a study of the growth of the s-wave superconductor Sn on the TI Bi2Te3 by physical vapor transport was presented. Three different growth scenarios were observed: (1) Sn-decorated Bi2Te3, (2) local Sn-rich areas on Bi2Te3 plates, and (3) Sn-doped Bi2Te3. The different growth regimes are controlled by the Sn precursor quantity, carrier gas flux, and growth time. Each type has its specific application potentials. [ABSTRACT FROM AUTHOR]

A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ∼38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

A comparison between Au, TiO2 and self-catalysed growth of SnO2 nanostructures using chemical vapour deposition is reported. TiO2 enables growth of a nanonetwork of SnO2, whereas self-catalysed growth results in nanoclusters. Using Au catalyst, single-crystalline SnO2 nanowire trees can be grown in a one-step process. Two types of trees are identified that differ in size, presence of a catalytic tip, and degree of branching. The growth mechanism of these nanotrees is based on branch-splitting and self-seeding by the catalytic tip, facilitating at least three levels of branching, namely trunk, branch and leaf. [ABSTRACT FROM AUTHOR]

Few-layer graphene is obtained in atmospheric chemical vapor deposition on polycrystalline copper in a roll-to-roll process. Raman and x-ray photoelectron spectroscopy were employed to confirm the few-layer nature of the graphene film, to map the inhomogeneities, and to study and optimize the growth process. This continuous growth process can be easily scaled up and enables the low-cost fabrication of graphene films for industrial applications. [ABSTRACT FROM AUTHOR]