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This paper presents analytical results for improving crystalline Si solar cells, analyzed using our knowledge in radiation-induced defects in Si. This study suggests that key issues for realizing higher performance Si solar cells are decrease in carbon concentration of less than 1 × 1014 cm−3. Defect introduction rates of Bi–O2i center induced by light illumination are compared with those of Bi–Oi center induced by 1-MeV electron irradiations in this study. Surface recombination velocity degradation of Si solar cells due to 1-MeV electron irradiations is compared with surface degradation of Si solar cells under light illumination by considering Pb center generation.

Objective Concurrent chemoradiotherapy is the standard treatment for locally advanced non-small cell lung cancer. In the current aging society, the establishment of an ideal treatment strategy for locally advanced non-small cell lung cancer in the elderly is warranted. To assess the efficacy of concurrent chemoradiotherapy with carboplatin and vinorelbine in elderly patients with locally advanced non-small cell lung cancer. Purpose To assess the efficacy of concurrent chemoradiotherapy with carboplatin and vinorelbine in elderly patients with locally advanced non-small cell lung cancer. Methods This multicenter, phase II study included patients with physiologically or medically unresectable stage I-III NSCLC, who were ≥70 years old. The patients received carboplatin (AUC 2) and vinorelbine (15 mg/m2) both on day 1, 8, 22 and 29 concurrently with radiotherapy (2.0 Gy/day, 30 fractions, total 60 Gy). The primary endpoint was the objective response rate. The secondary endpoints were the progression-free survival, overall survival and the incidence of adverse events. Results 50 patients were accrued (42 men and 8 women). The median age was 77 years (range, 70–89 years) and the clinical stage was I/II/III in 3/7/40, respectively. Forty-seven patients completed the planned treatment. The response was complete remission in 4, partial response in 31, stable disease in 12 and progressive disease in 3, giving an objective response rate of 70% (95% confidence interval: 55.4–82.1). Frequent high Grade 3 or higher adverse events were hematologic, but no treatment deaths were noted. The median and 2-year progression-free survival were 8.4 months and 21.1% (95% confidence interval: 9.5–32.7%), respectively, and the median and 2-year overall survival were 15.4 months and 41.1% (95% confidence interval: 27.0–55.2), respectively. Conclusion Concurrent chemoradiotherapy with carboplatin and vinorelbine showed an acceptable objective response rate and safety in elderly patients.

Indium gallium phosphide (InGaP) solar cell with a superior high-radiation resistance is expected to be a powerful candidate for a dosimeter under a high-radiation dose rate environment. In...

We have developed a rapid ELO technique using mechanical cleavage via 2D-layered metal selenide inserted between the III-V epitaxial layer and the substrate. In this technique, processing time is only a few seconds. The key issue is the crystal quality improvement of the GaAs layer. As 2D-layered metal selenide, double 2D-buffer layers of GaSe and In2Se3 were grown on Si(111) substrate by MBE. The 180o rotational twin formation and dislocations in GaAs layer were characterized by XRD pole figure and cross-sectional TEM. The twin ratio was estimated to 12%. These twin domains are mainly distributed near the bottom interface. To reduce dislocation density, it is necessary to suppress the twin formation at the interface.

Development of high-efficiency solar cell modules and new application fields such as PV (Photovoltaics)-powered vehicles are significant for the further development of PV and the creation of new clean energy infrastructure based on PV. In this paper, analytical results for impact of high-efficiency solar cell modules on increasing driving distance, reducing CO 2 emission and saving charging cost of electric vehicles by PV-powered vehicles. Because the Si tandem solar cells are expected to have significant potential for PV-powered vehicle applications, potentials of high-efficiency and driving distance are also analyzed. The III-V/Si 3-junction solar cell modules have potential of driving distance of 30 km/day average and more than 50 km/day on a clear day.

Molecular drugs targeting mutated or rearranged oncogene drivers have become one of the standard recognized treatments in patients with advanced and recurrent non-small cell lung cancer. RET is located in the long arm of human chromosome 10 and encodes a receptor tyrosine kinase protein, and RET fusion-positive lung adenocarcinoma occurs in 1%–2% of cases. Clinical trials of multikinase inhibitors, including cabozantinib, vandetanib, sorafenib, and lenvatinib, that inhibit RET oncogene activity have shown their antitumor efficacy. Recently, RET inhibitors such as pralsetinib and selpercatinib that are specialized for RET kinase have also been developed, and their efficacy was investigated in previous clinical trials (BLU-667 and LOXO-292). In this review, we summarized the effects and adverse events of multikinase and selective RET inhibitors and the various diagnostic techniques for RET gene fusion. In the perspective part, we focused on the unsolved issues on treatment for RET fusion-positive lung cancer and future developments.

Background: In Japan, docetaxel, a cytotoxic monotherapy, is the standard drug administered to elderly patients with advanced non-small cell lung cancer (NSCLC). Carboplatin plus nab-paclitaxel (nab-PC) demonstrated a high objective response rate (ORR) in patients with squamous histology and was suggested to improve overall survival (OS) for these patients. The CAPITAL trial aimed to assess the safety and efficacy of nab-PC versus docetaxel as first-line therapy for elderly patients with advanced squamous NSCLC. Methods: This multicenter, open-label, phase III, randomized trial was performed at 92 institutions in Japan. Inclusion criteria: 1) advanced squamous NSCLC with no prior systemic chemotherapy, 2) age ≥70 years, and 3) Eastern Cooperative Oncology Group performance status 0 or 1. Patients were randomized 1:1 to nab-PC arm (carboplatin AUC, 6 mg/mL/min plus nab-paclitaxel 100 mg/m2 weekly) or D arm (docetaxel 60 mg/m2) for each 21-day cycle. Findings: The nab-PC arm showed higher OS (hazard ratio [HR]: 0·52; 90%CI: 0·38–0·70; median: 16·9 versus 10·9 months; p = 0·0003), progression-free survival (median: 5·8 versus 4·0 months; HR: 0·42; 95%CI: 0·30–0·58; p < 0·0001), and ORR (66·3 versus 28·0%; p < 0·0001) than the D arm. The most common grade 3 or 4 adverse events were leukopenia (46·3%), neutropenia (63·2%), and anemia (38·9%) in the nab-PC arm, and leukopenia (56·7%), neutropenia (77·3%), and febrile neutropenia (17·5%) in the D arm; ≥ grade 2 sensory peripheral neuropathy was observed in 15 (15·8%) and 1 (1·0%) patient(s) in the nab-PC and D arms, respectively. Serious treatment-related adverse events and deaths occurred in 13 (13·7%) and 11 (11·3%) patients and in 2 and 1 patient(s) in the nab-PC and D arms, respectively. Interpretation: Nab-PC improved OS more than docetaxel and can be used as standard first-line treatment for elderly patients with advanced squamous NSCLC. Clinical Trial Registration Details: This trial was registered with the UMIN Clinical Trials Registry (UMIN000019843) and the Japan Registry of Clinical Trials (jRCTs041180110) and its protocol has been published previously. Funding Information: This study was conducted by the National Hospital Organization Nagoya Medical Center under a funding contract with Taiho Pharmaceutical Co. Ltd., Tokyo, Japan. Declaration of Interests: Y.K. reports grants from Taiho Pharmaceutical, during the conduct of the study; grants and personal fees from MSD, personal fees from AstraZeneca, Chugai Pharmaceutical, Taiho Pharmaceutical, Eli Lilly, Boehringer Ingelheim, Ono pharmaceutical, outside the submitted work. S.I. reports grants and personal fees from ONO PHARMACEUTICAL CO., LTD., personal fees from Chugai Pharmaceutical Co., Ltd., AstraZeneca K.K., MSD K.K, Bristol-Myers Squibb K.K., Taiho Pharmaceutical Co., Ltd., DAIICHI SANKYO COMPANY, LIMITED., outside the submitted work. H.S. reports grants from Taiho Pharmaceutical, during the conduct of the study; grants and personal fees from AstraZeneca, MSD K.K, Ono Pharmaceutical, personal fees from Boehringer Ingelheim, Chugai Pharma, from Kyorin, outside the submitted work. A.K. reports grants from Taiho Pharmaceutical Co., Ltd., during the conduct of the study; personal fees from Bayer Yakuhin, Ltd., outside the submitted work. S.A. reports grants from The National Cancer Center Research and Development Fund (26-A-22, 29-A-15, 2020-A-13), Taiho Pharmaceutical Co Ltd, during the conduct of the study; grants and personal fees from AstraZeneca, Ono, Taiho, Boehringer Ingelheim, Pfizer, Bristol-Myers Squibb, MSD, Eli Lilly, Chugai, Merck, grants and non-financial support from F. Hoffmann-La Roche, personal fees from Hisamitsu, Kyowa Hakko Kirin, Novartis Pharma, Thermo Fisher Scientific, outside the submitted work.YT reports grants and personal fees from Taiho pharmaceutical Co, during the conduct of the study; grants and personal fees from Eli Lilly, Ono pharmaceutical Co, Chugai pharmaceutical Co, MSD, Takeda, grants from Daiichi Sankyo, Kyowa-Hakko Kirin, personal fees from Novartis, Boehringer Ingelheim, AstraZeneca, outside the submitted work. A.I. reports personal fees from AstraZeneca, Eli Lilly, Boehringer Ingelheim, Pfizer, Chugai Pharmaceutical, MSD, Daiichi Sankyo, outside the submitted work. T.K. reports personal fees from AstraZeneca, MSD, Eli Lilly, Chugai, Ono, Bristol Myers, Boehringer Ingelheim, grants from AstraZeneca, MSD, Ono, Eli Lilly, Takeda, outside the submitted work. I.O. reports grants from Boehringer Ingelheim, during the conduct of the study; grants and personal fees from AstraZeneca, Taiho Pharmaceutical, Boehringer Ingelheim, Ono Pharmaceutical, MSD Oncology, Lilly, Bristol-Myers Squibb, Chugai Pharma, grants from Astellas Pharma, Novartis, AbbVie, personal fees from Pfizer, outside the submitted work. M.Y. reports grants and personal fees from Chugai Pharmaceutical, grants from Daiichi Sankyo, MSD, Pfizer Japan, outside the submitted work. M.S. reports grants and personal fees from Taiho Pharmaceutical Co., LTD, Chugai Pharmaceutical Co., LTD, MSD K.K, Boehringer Ingelheim Pharmaceuticals, Inc., Eli Lilly Japan K.K., personal fees from AstraZeneca Co., Ltd, outside the submitted work. T.Y. reports grants and personal fees from Takeda, Chugai, Taiho, Ono, Bayer, personal fees from Boehringer Ingelheim, Pfizer, Sysmex, Gilead Sciences, AstraZeneca, MSD, Sanofi, Otsuka, Kyowa Kirin, grants from Daiichi-Sankyo, Astellas, outside the submitted work. M.A. reports grants from Kyowa Kirin, Co. Ltd., outside the submitted work. K.K. reports grants and personal fees from Ono, Boehringer Ingelheim, personal fees from Chugai, MSD, AstraZeneca, Eli Lilly, Daiichi Sankyo, Bristol Myers Squibb, Kyowa Hakko KIRIN, Taiho, outside the submitted work. M.T. reports grants and personal fees from AstraZeneca, Chugai Pharmaceutical, Covidien Japan, Eli Lilly Japan, Kyowa Hakko Kirin, MSD, Nippon Boehringer Ingelheim, Novartis Pharma, Ono Pharmaceutical, Pfizer Japan, Taiho Pharmaceutical, personal fees from Bristol-Myers Squibb, Johnson & Johnson, Nippon Kayaku, and grants from KM Biologics, outside the submitted work. TS reports grants and personal fees from Chugai Pharmaceutical, Daiichi Sankyo, Eli Lilly Japan, MSD, Novartis Pharma, Pfizer Japan, Takeda Pharmaceutical, grants from AbbVie, Kissei Pharmaceutical, LOXO Oncology, Merck Biopharma, personal fees from AstraZeneca, Bristol-Myers Squibb, Covidien Japan, Kyowa Hakko Kirin, Mochida Pharmaceutical, Nippon Boehringer Ingelheim, Ono Pharmaceutical, Taiho Pharmaceutical, Thermo Fisher Scientific, Precision Medicine Asia, outside the submitted work. N.Y. reports grants and personal fees from MSD K.K., Chugai Pharmaceutical CO., LTD., ONO PHARMACEUTICAL CO., LTD., DAIICHI SANKYO CO., LTD., TAIHO PHARMACEUTICAL CO., LTD., Takeda Pharmaceutical CO., LTD., Eli Lilly Japan K.K., Boehringer-Ingelheim, Novartis, Pfizer Inc., AstraZeneca, personal fees from Thermo Fisher Scientific, Bristol-Myers Squibb, Life Technologies Japan Ltd., NIPPON KAYAKU, Merk Biopharma, grants from Astellas Pharma Inc., TSUMURA & CO., SHIONOGI Co., Ltd., AbbVie GK., Amgen Inc., KYORIN Pharmaceutical Co., Ltd., Eisai Co., Ltd., TERUMO CORPORATION, Toppan Printing Co., Ltd., TOSOH, outside the submitted work. A.G. reports personal fees from Taiho, Nihon Kayaku, AstraZeneca, Chugai, Ono, Behringer-Ingelheim, outside the submitted work. All other authors declare no competing interests. Ethics Approval Statement: The study was approved by the Clinical Research Ethics Committee of each participating institution and written informed consent was obtained from each patient prior to participation in the study. It was conducted in accordance with the principles of the Declaration of Helsinki, 2013.

The III-V compound solar cells have contributed as space and concentrator solar cells and are important as sub-cells for multi-junction solar cells. This paper reviews progress in III-V compound single-junction solar cells such as GaAs, InP, AlGaAs and InGaP cells. In addition, analytical results for non-radiative recombination and resistance losses in III-V compound solar cells are shown for further understanding and reducing major losses in III-V compound materials and solar cells.

Development of PV-powered vehicle applications is desirable and very important for creation of clean energy society. This paper presents PV efficiency impact on reduction in CO 2 emission and increase in driving distance. This paper shows analytical results for efficiency potential of various solar cells for choosing candidates of high-efficiency solar cell modules for automobile applications. As a result of analysis, static low concentrator PV and III-V/Si tandem solar cells are thought to be some of their candidates.

Efficiency potential of crystalline Si solar cells is analyzed by considering external radiative efficiency (ERE), voltage, and fill factor losses. Crystalline Si solar cells have an efficiency potential of more than 28.5% by realizing ERE of 20% from about 5% and normalized resistance of less than 0.05 from around 0.1. Nonradiative recombination losses in single-crystalline and multicrystalline Si solar cells are also discussed. Especially, nonrecombination and resistance losses in multicrystalline Si solar cells are shown to be higher than those of single-crystalline cells. Importance of further improvement of minority-carrier lifetime in crystalline Si solar cells is suggested for further improvement of crystalline Si solar cells. High efficiency of more than 28.5% will be realized by realizing high minority-carrier lifetime of more than 30 ms. Key issues for those ends are reduction in carbon concentration of less than 1 × 1014 cm−3, oxygen precipitated and dislocations even in single-crystalline Si solar cells, and reduction in dislocation density of less than 3 × 103 cm−2 in multicrystalline Si solar cells.

This paper overviews photovoltaic R&D projects in Japan. Recently, world-record and second highest efficiencies of various types of solar cells have been demonstrated under the New Energy and Industrial Technology Development Organization Project: 44.4% (under concentration) and 37.9% (under 1 sun) InGaP/GaAs/InGaAs inverted metamorphic 3-junction solar cells by Sharp, 26.7% single crystalline Si heterojunction back-contact solar cell by Kaneka, 22.3% copper indium gallium selenide solar cell by Solar Frontier, a-Si/μc-Si/μc-Si thin-film triple-junction solar cell with stabilized efficiency of 14.0% by AIST, 11.9% dye-sensitized solar cell by Sharp, and 11.2% organic solar cell by Toshiba. This paper also presents efficiency potential of high-efficiency and next-generation solar cells analyzed by considering external radiative efficiency, open-circuit voltage loss, and fill factor loss. Efficiency potential of crystalline Si, GaAs, III-V compound 3-junction and 5-junction, CIGSe, CdTe, CZTS(Se), multiquantum well, and quantum dot and perovskite solar cells is shown to be 28.5%, 29.7%, 40%, 43%, 26.5%, 26.5%, 20%, 25.8%, and 24.9% under 1 sun, respectively.

Background Inhalation studies suggested "protective" roles of exogenous prostaglandin E 2 , but the clinical relevance of endogenous prostanoids in asthma is poorly known. The objective of this study is to measure sputum levels of prostanoids in asthmatic patients to correlate with clinical indices. Methods Mild ( n = 41) or moderate-to-severe (19) asthmatics and 27 normal controls were examined for pulmonary function (FEV 1 and mid-forced expiratory flow), sputum cell differentials, and sputum levels of prostaglandins D 2 , E 2 , F 2α , and thromboxane B 2 measured by sandwich enzyme immunoassay. Results Each prostanoid level did not differ among the three groups. Sputum number of bronchial epithelial cells was greater in moderate-to-severe asthmatics than in the other two groups, suggesting epithelial desquamation. Levels of prostaglandin F 2α , D 2 , and thromboxane B 2 positively correlated with the severity of airflow obstruction in the 60 asthmatic patients, whereas prostaglandin E 2 levels were unrelated to pulmonary function. The ratio of combined "contractile" prostanoids (prostaglandin D 2 /prostaglandin F 2α /thromboxane B 2 ) to prostaglandin E 2 was 2.5-fold greater in moderate-to-severe asthmatics than in controls ( p = 0.001) or in mild asthmatics ( p = 0.0002) but did not differ between the latter two groups. In the two asthmatic groups combined, this ratio positively correlated with the sputum number of epithelial cells. The combined "contractile" prostanoids levels positively correlated with prostaglandin E 2 levels in controls and in mild asthmatics but not in moderate-to-severe asthmatics. Conclusions An imbalance in production, breakdown, or both between prostaglandin E 2 and other prostanoids possibly due to epithelial damage may be involved in the pathogenesis of moderate-to-severe asthma.

BackgroundHoneycombing on high-resolution computed tomography (HRCT) images is a key finding in idiopathic pulmonary fibrosis (IPF). In IPF, honeycombing area determined by quantitative CT analysis is correlated with pulmonary function test findings. We hypothesized that quantitative CT-derived honeycombing area (HA) might predict mortality in patients with IPF.Materials and methodsChest HRCT images of 52 IPF patients with definite usual interstitial pneumonia (UIP) pattern were retrospectively evaluated. Mortality data up to July 31, 2016, were recorded. Using a computer-aided system, HA and percentage of HA (%HA) were measured quantitatively. Predictors of 3-year mortality were evaluated using logistic regression models.ResultsThe median %HA, %predicted forced vital capacity (FVC) and composite physiologic index (CPI) were 3.8%, 83.6%, and 33.6, respectively. According to GAP (gender, age, and physiology) stage, 20, 14, and 5 patients were classified under stages I-II-III, respectively. Percentage of HA was significantly correlated with %FVC, CPI, and GAP stage (all, p < 0.001). In univariate analysis, %HA, %FVC, and CPI were statistically significant predictors of mortality. In multivariate analysis using the stepwise regression method, only %HA (odds ratio [OR], 1.27; p = 0.011) was a significant independent predictors of mortality. Patients with %HA ≥ 4.8% had significantly lower survival rates than those with lesser %HA (median survival time, 1.3 vs 5.0 years; log-rank test; p < 0.001).ConclusionQuantitative CT-derived HA might be an important and independent predictor of mortality in IPF patients with definite UIP pattern.

The growth orientation dependence of N incorporation on traditional (100) and high-index GaAs (311)A/B planes has been investigated by the first principle calculation and experimental measurement. Due to the electronegativity and atomic radius differences between As and N atoms, the Ga N bond is much shorter than the corresponding Ga As bond as N occupies As atom site. The optimization to energetically preferred construction leads to the inward moving of N atom, while the displacement extent of three surface models exhibits considerable differences. More importantly, the theoretical result reveals a lower formation energy of N doping for N@(311)B GaAs surface and a larger one for N@(311)A GaAs surface as compared with the traditional (100) GaAs plane. The first principle investigations thus suggest the enhanced N incorporation in (311)B GaAsN, which is in good accordance with the secondary ion mass spectrometry (SIMS) measurement results of GaAsN layers by chemical beam epitaxy (CBE).

The paper presents a quantitative approach to the investigation and comparison of the material qualities of III-V on silicon (III-V/Si) solar cells by using external radiative efficiencies. We use this analysis to predict the limiting efficiencies and evaluate the criteria of material quality in order to achieve high efficiency III-V/Si solar cells. This result yields several implications for the design of high efficiency III-V/Si solar cells.

In this paper, the Chemical Beam Epitaxy approach to GaAsN material growth has been investigated. Photoluminescence and Hall effect measurements were performed to clarify the influence of defects on the transport properties, those of holes in particular. The PL intensity of near-band emission (1.35 eV-peak) for GaAs0.996N0.004 at low temperature ( 1) indicated that the N atoms were alloyed in a disordered arrangement. As a result, the corresponding alloy scattering mechanism was enhanced, contributing to the hole mobility decrease. However, compared to p-type GaAsN grown by MBE or MOCVD, our CBE-grown GaAsN showed a higher value of hole mobility.

GaAs were grown by the migration-enhanced epitaxy (MEE) method on vicinal (001) Si substrates oriented 4 ° off towards [110] at low temperature. Investigations of crystalline and optical properties of the grown GaAs/Si were carried out by the methods of X-ray diffraction (XRD) and low-temperature photoluminescence (PL). The possible cause for tilting in the GaAs grown at low-temperature is discussed.

The properties of the acceptor states in GaAsN grown by chemical beam epitaxy (CBE) are studied by analyzing their charges based on the Poole–Frenkel model. Deep level transient spectroscopy (DLTS) shows two acceptor levels at 0.11 and 0.19 eV above the valence band maximum. The emission rates of carriers from these states are enhanced with increasing the electric field during the DLTS measurement, which indicates that the energies required for the emission are decreased. By analyzing this field-enhanced emission process, the polarizabilities of the levels at 0.11 and 0.19 eV are found to be −1 (±0.1) and −2 (±0.1), respectively. In addition, these states have almost the same concentration. Therefore, we conclude that they originate from the same defect, acting as a double acceptor in GaAsN film grown by CBE.

The N–H related acceptor defects in GaAsN grown by chemical beam epitaxy (CBE) are studied by hydrogen isotopes, H and D. When the films are grown by a conventional arsenic source, deep level transient spectroscopy (DLTS) reveals two energy levels at 0.11 and 0.19 eV above the valence band. These levels were considered to act as a double acceptor in the literature. When the films are grown by a deuterated arsenic source, new signals appear in DLTS spectra at 0.15 and 0.23 eV. This indicates that the new signals are originated from D-related defects. The energy differences between 0.15 and 0.11 eV, and that between 0.23 and 0.19 eV are same (0.04 eV). Although these energy levels become deeper with increasing the growth temperature, the energy differences are almost constant independent of the growth condition. In addition, the intensity ratios of the peaks at 0.15 (0.23) eV to that at 0.11 (0.19) eV have a good correlation with the isotopic concentration ratio of D to H in the grown films. Therefore, we conclude that the energy differences and intensity ratios of the DLTS peaks occur due to the structural change from N–H to N−D in the same type of defect, and that this acceptor is an N–H related defect.

In vitro estimating strategies for potential neurotoxicity are required to screen multiple substances. In a previous study, we showed that exposure to low-concentrations of some chemicals, such as organotin, decreased the expression of GluR2 protein, which is a subunit of alpha-amino-3-hydroxy-5-methyl-4-isoxazole propionic acid (AMPA)-type glutamate receptors, and led to neuronal vulnerability. This result suggested that GluR2 decreases as an index of neuronal cell sensitivity and vulnerability to various toxic insults. Accordingly, we developed a versatile method that is a large scale determination of GluR2 protein expression in the presence of environmental chemicals by means of AlphaLISA technology. Various analytical conditions were optimized, and then GluR2 protein amount was measured by the method using AlphaLISA. The GluR2 amounts were strongly correlated with that of measured by western blotting, which is currently used to determine GluR2 expression. An ideal standard curve could be written with the authentic GluR2 protein from 0ng to 100ng. Subsequently, twenty environmental chemicals were screened and nitenpyram was identified as a chemical which lead to decrease in GluR2 protein expression. This assay may provide a tool for detecting neurotoxic chemicals according to decreases in GluR2 protein expression.

Calculation of the optimized bandgap combination at the specific site required many annually-observed atmospheric parameters. For evaluating the impact of the atmospheric conditions, both the best and the worst distributions were taken from the measurement data. It was found that the optimization of the bandgaps combination considering ever-changing spectrum, may be determined by the matching condition to the sun height at the culmination on the winter solstice. Considering influence on the annual energy yield of the CPV multi-junction cell, the best number of junction was 3 and more than 4 junctions was not better for the annual energy yield.

The cost reduction potential of concentrator photovoltaics (CPV) by adding a silicon backplane solar cell is quantified. Using a backplane solar cell module in a CPV system to absorb the diffused sunlight has been proposed and demonstrated as a way to fully utilize the global solar spectrum instead of just direct normal incidence. However, it is not clear that whether the energy price of this system can ultimately be competitive with the state-of-the-art CPV or flat-panel silicon PV system. In this paper, we analyzed the energy yields and the cost of the III-V/Si hybrid CPV system to find its limiting cost reduction potential. Our results suggest that it is unlikely that the energy price of CPV can be dramatically reduced simply by introducing the backplane silicon module into the the state-of-the-art CPV system. One should completely reconsider the designs of CPV components and leverage the unique properties of the III-V/Si hybrid CPV system to make this concept succeed.

Combining Si PV module technology with an efficient III- V CPVs top PV into a tandem device is an attractive approach to enhance the efficiency of PV modules. Here, a method called III- V/Si hybrid configurations for enhancing the Si module efficiency is placing III- V static CPVs at the edge gap of each Si wafer rather than stacking in the top of Si. The prototype PV module shows the enhancement of efficiency. The cost evaluations of the III- V lSi hybrid configurations compared with Si module is discussed under various presumed cost ratio of 111-V/Si PVs.

By stacking a III - V cell to the Si cell, it is expected to reach to more than 30 % of efficiency. However, the contribution of the Si bottom cell may be reduced to 5 to 6 % in maximum. Another problem is that the III-V cell cost is still expensive and high concentration without relying on tracking is expected. For solving these two problems, a new configuration that places small III-V multi-junction solar cells at four corners of a single-crystalline Si solar cell was invented.

Using surface-activated bonding technologies we fabricate InGaP/GaAs/ITO/Si hybrid triple-junction (3J) cells with p+-GaAs/ITO and those with n+-GaAs/ITO bonding interfaces. ITO films deposited on the emitter of Si bottom cells work as intermediate layers between III-V and Si sub cells. The samples are not heated during the bonding process. The photovoltaic characteristics of the fabricated 3J cells are compared with characteristics of conventional 3J cells without intermediate layers. The InGaP/GaAs/ITO/Si 3J cells with $n$ + -GaAs/ITO bonding interfaces reveal the highest conversion efficiency and the lowest differential resistance among the investigated 3J cells, which implies the potential of ITO-based intermediate layers for achieving more excellent performances of hybrid multi-junction cells.

The effect of magnesium doping in C60 films grown on mica was studied. An improvement on the conductivity of the films was observed when the concentration of magnesium was increased. Structural changes were also observed from the diffraction patterns of x-ray at high magnesium concentrations. A new peak in the photoconductivity spectra was observed. This new peak was also attributed to structural changes, which would lead to some changes in the carrier transport properties. The pentagonal pinch Ag(2) mode of the Raman spectra weakened and shifted to lower frequencies when the magnesium concentration increased, which indicates that the C60 molecule cage changed.

To investigate the microstructure of nitrogen-induced localized state ( E N ) that perturbs the conduction band of GaAs host material, we adopted the photoreflectance measurements to chemical-beam-epitaxy and flow-rate modulated chemical-beam-epitaxy grown GaAsN thin films. We measured both two split subbands to estimate correct values of E N . It was clearly seen that estimated E N decreased with increasing nitrogen content and temperature. By considering a change of a mean distance between adjacent nitrogen atoms, we concluded that the microscopic structure of E N is not only an isolated nitrogen atom but also nitrogen-related complex, accompanied by low-order pairs of nitrogen atoms and/or nitrogen clusters.

Aeromonas sobria is a pathogen causing food-borne illness. In immunocompromised patients and the elderly, A. sobria can leave the intestinal tract, and this opportunistically leads to severe extraintestinal diseases including sepsis, peritonitis, and meningitis. To cause such extraintestinal diseases, A. sobria must pass through the intestinal epithelial barrier. The mechanism of such bacterial translocation has not been established. Herein we used intestinal (T84) cultured cells to investigate the effect of A. sobria serine protease (ASP) on junctional complexes that maintain the intercellular adhesion of the intestinal epithelium. When several A. sobria strains were inoculated into T84 monolayer grown on Transwell inserts, the strain with higher ASP production largely decreased the value of transepithelial electrical resistance exhibited by the T84 monolayer and markedly caused bacterial translocation from the apical surface into the basolateral side of T84 monolayer. Further experiments revealed that ASP acts on adherens junctions (AJs) and causes the destruction of both nectin-2 and afadin, which are protein components constituting AJs. Other studies have not revealed the bacterial pathogenic factors that cause the destruction of both nectin-2 and afadin, and our present results thus provide the first report that the bacterial extracellular protease ASP affects these molecules. We speculate that the destruction of nectin-2 and afadin by the action of ASP increases the ability of A. sobria to pass through intestinal epithelial tissue and contributes to the severity of pathological conditions.

There have been many concerns expressed regarding the possible adverse effects of thyroid hormone-disrupting chemicals including polychlorinated biphenyls and polybrominated diphenyl ethers (PBDEs), since thyroid hormones play crucial roles in normal vertebrate development. A vast amount of PBDEs have been used as flame retardants for the last two decades and our environment has been contaminated with them. Some PBDEs, especially hydroxylated PBDEs, reportedly show an affinity to the thyroid hormone receptor (TR) and act as thyroid hormone agonists, but in other studies they were reported to inhibit the actions of thyroid hormones. Therefore, in the present study, we investigated the binding affinities of PBDEs and their metabolites to TR and their ability to induce thyroid hormone-responsive transcription using luciferase reporter gene assays in two different cell lines, a pituitary cell line, MtT/E-2, and Chinese hamster ovary (CHO) cells. The binding assay showed that many of the examined PBDEs have significant affinity to TR. Interestingly, some of these PBDEs, such as 4'-OH-BDE-17 and 2'-OH-BDE-28, acted as agonists in the reporter gene assay in MtT/E-2 cells, while they acted as antagonists in CHO cells. Our results demonstrated that whether PBDEs and their metabolites are TR agonists or antagonists depends on the cell type used in the assay, which may suggest that the thyroid hormone-disrupting actions of PBDEs differ among target tissues or species.

The two N-H local vibrations in GaAsN grown by the chemical beam epitaxy have the same preferential orientation in the crystal. The bond orientations of the N-H wagging mode at 961 cm-1 and stretching mode at 2952 cm-1 tend to align along [1-10]. The peak intensities of the three major N-H local vibration modes were examined by the polarized Fourier transform infrared spectroscopy. The integrated absorption peaks at 961and 2952 cm-1 showed the two-fold rotational symmetry in (001) plane, while the one at 3098 cm-1 was almost constant within the accuracy of this measurement. The maximum peak intensities were observed when the IR polarization direction was [110] for the N-H wagging mode at 961 cm-1, and [1-10] for the N-H stretching mode at 2952 cm-1, which means that those bond orientations projected on (001) plane were the same. The result indicates that the N-H wagging mode at 961 cm-1 and stretching mode at 2952 cm-1 are originated from the same N-H bond. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The effect of the tridimethylaminoarsenic (TDMAAs) source flow rate on the electronic signature as well as on the trapping density of electron traps in undoped n-type GaAsN grown by chemical beam epitaxy was investigated by deep level transient spectroscopy and isothermal capacitance transient spectroscopy methods. It was found that the densities of four electron traps, E1 to E4, localized at average energy depths of 0.05, 0.11, 0.16, and 0.39 eV, respectively below the bottom edge of the conduction band, significantly decrease with increasing TDMAAs up to 1.2 sccm. Nevertheless, the decrease of trapping density for these energy states showed quite different behaviors. This result implies that the excess of As atoms in the alloy could limit the formation of these electron traps. Furthermore, it indicates that the degradation of the optoelectronic properties of the alloy is not only caused by the addition of N atom to the lattice of GaAs. An interesting feature of this result is the possibility of recovering the lifetime of minority carriers in p-type GaAsN material, and, therefore, enhancing the conversion efficiency of GaAsN based solar cells. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Current transport mechanisms were investigated in a GaAsN homojunction solar cell (HJSC) grown by chemical beam epitaxy. At each temperature of measurement, the current-voltage (I–V) characteristics were found to deviate from the diffusion model. The fitting of these characteristics affirmed that the recombination current in the space charge region of the HJSC is mainly attributed to a localized state at 0.31 eV below the bottom edge of the conduction band of GaAsN. This recombination center was identified by deep level transient spectroscopy. It was previously confirmed to act as a nitrogen-related non-radiative recombination center and the split interstitial formed from one nitrogen atom and one arsenic atom in a single V-site (N-As) As was tentatively suggested to be its possible origin. The lifetime of electrons from the conduction band to its energy level was calculated to be around ∼0.20 ns, using the Shockley-Read-Hall model for trap-assisted recombination process. Furthermore, such order of magnitude was confirmed by time-resolved photoluminescence measurements.

The temperature dependence of capacitance–voltage ( C – V ) and current voltage ( I – V ) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam epitaxy (CBE). In one hand, a nitrogen-related sigmoid increase of junction capacitance and ionized acceptor concentration was observed in the temperature range 70–100 K and was attributed to the thermal ionization of a nitrogen–hydrogen-related deep acceptor-state, with thermal activation energy of approximately 0.11 eV above the valence band maximum (VBM) of GaAsN. This acceptor state is mainly responsible for the high background doping in unintentionally doped GaAsN grown by CBE. On the other hand, the I – V characteristics at different temperatures were found to deviate from the well known pure thermionic-emission mechanism. Based on their fitting at each temperature, the recombination current in the space charge region of GaAsN Schottky diode was mainly attributed to a hole trap, localized at 0.51 eV above the VBM. Given the accuracy of measurements, this result was confirmed by deep level transient spectroscopy measurements. Nevertheless, considering the Shockley–Read–Hall model of generation-recombination, the recombination activity of this defect was quantified and qualified to be weak compared with the markedly degradation of minority carrier lifetime in GaAsN material.

We present the measurement results and analyses of a InGaP/GaAs//Si mechanical stack four-terminal solar cell. From these results, we performed detailed discussions of the loss mechanisms and efficiency limits of InGaP/GaAs//Si mechanical stack solar cells.

In this letter we report the design and synthesis of a series of plasmin inhibitors, which share the amino acid-based linker with limited free rotation between the hydantoin moiety and the benzimidazole scaffold. Our studies led to potent plasmin inhibitors and yielded important new insights into their structure-activity relationship for binding to the active site of plasmin.

The temperature dependences of the piezoelectric photo-thermal (PPT) signals from unintentionally doped p-type GaAsN films grown on semi-insulating GaAs substrate were measured from 80 to 300 K. From the theoretical analysis based on the rate equation for the recombination of photo exited carriers to the localized levels, we identified five majority hole traps, P1-P5 in GaAsN films. Among them, estimated concentrations of the P3 and P5 traps increased with the nitrogen contents. Therefore, we concluded that these two traps were due to nitrogen-related recombination centers in GaAsN.

III–V concentrator photovoltaic systems attain high efficiency through the use of series connected multi-junction solar cells. As these solar cells absorb over distinct bands over the solar spectrum, they have a more complex response to real illumination conditions than conventional silicon solar cells. Estimates for annual energy yield made assuming fixed reference spectra can vary by up to 15% depending on the assumptions made. Using a detailed computer simulation, the behaviour of a 20-cell InGaP/In0.01GaAs/Ge multi-junction concentrator system was simulated in 5-min intervals over an entire year, accounting for changes in direct normal irradiance, humidity, temperature and aerosol optical depth. The simulation was compared with concentrator system monitoring data taken over the same period and excellent agreement (within 2%) in the annual energy yield was obtained. Air mass, aerosol optical depth and precipitable water have been identified as atmospheric parameters with the largest impact on system efficiency. Copyright © 2012 John Wiley & Sons, Ltd.

This paper reviews Japanese R&D activities of III-V compound multi-junction (MJ) and concentrator solar cells. As a result of advanced technologies development for high efficiency cells and discovery of superior radiation-resistance of InGaP based materials, InGaP-based MJ solar cells have been commercialised for space use in Japan. A new world-record efficiency of 35.8% at 1 sun has been achieved with InGaP/GaAs/InGaAs 3-junction solar cell. MJ solar cells composing of multi-layers with different bandgap energies have the potential for achieving high conversion efficiencies of over 50% and are promising for space and terrestrial applications due to wide photo response. In order to solve the problems of difficulties in making high performance and stable tunnel junctions, a double hetero (DH) structure tunnel junction was found to be useful for preventing diffusion from the tunnel junction and improving the tunnel junction performance by the authors. An InGaP material instead of AlGaAs for the top cell was proposed by NREL. As a result of advanced technologies development for high efficiency cells and discovery of superior radiation-resistance of InGaP-based materials by the authors, InGaP-based MJ solar cells have been commercialised for space use even in Japan since 2002. Most recently, world-record efficiency (35.8%) at 1-sun AM1.5G has been realised with inverted epitaxial grown InGaP/GaAs/InGaAs 3-junction cells by Sharp. Since the concentrator modules have been demonstrated to produce roughly 1.7 to 2.6 times more energy per area per annum than the 14% multicrystalline silicon modules in most cities in Japan, concentrator PV (Photovoltaics) as the 3rd PV technologies in addition to the 1st crystalline Si PV and the 2nd thin-film PV technologies are expected to contribute to electricity cost reduction for widespread PV applications.

Background: Cough variant asthma (CVA) is a phenotype of asthma presenting solely with coughing, characterized by airway hyperresponsiveness, eosinophilic inflammation and a cough response to bronchodilators. Leukotriene receptor antagonists (LTRAs) are antiasthma medications with anti-inflammatory and bronchodilatory properties. Although LTRAs exert antitussive effects in CVA, the mechanisms involved are unknown. Objectives: This study aimed to clarify the antitussive mechanisms of LTRAs in CVA patients. Methods: We prospectively observed the effect of montelukast (10 mg) daily for 4 weeks in 23 consecutive nonsmoking adults with anti-inflammatory treatment-naive CVA. We evaluated, before and after treatment, the cough visual analogue scale (VAS), pulmonary function (spirometry and impulse oscillation), methacholine airway responsiveness, cough receptor sensitivity, expressed by the concentration of capsaicin inducing 2 or more (C2) and 5 or more (C5) coughs, sputum eosinophil counts and levels of inflammatory mediators, including cysteinyl leukotrienes, leukotriene B4, prostaglandin (PG) D2, PGE2, PGF2α and thromboxane B2. We compared the baseline characteristics of the patients based on the symptomatic response to montelukast, defined as a decrease in the cough VAS of >25% (n = 15) or ≤25% (n = 8). Results: Montelukast significantly decreased the cough VAS (p = 0.0008), sputum eosinophil count (p = 0.013) and cough sensitivity (C2: p = 0.007; C5: p = 0.039), whereas pulmonary function, airway responsiveness and sputum mediator levels remained unchanged. Multivariate analysis showed that a better response to montelukast was associated solely with younger age (p = 0.032). Conclusion: The antitussive effect of montelukast in CVA may be attributed to the attenuation of eosinophilic inflammation rather than its bronchodilatory properties.

Growth temperature dependence of strain relaxation during In 0.12 Ga 0.88 As/GaAs(0 0 1) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 °C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.

A nitrogen-related electron trap (E1), located approximately 0.33 eV from the conduction band minimum of GaAsN grown by chemical beam epitaxy, was confirmed by investigating the dependence of its density with N concentration. This level exhibits a high capture cross section compared with that of native defects in GaAs. Its density increases significantly with N concentration, persists following post-thermal annealing, and was found to be quasi-uniformly distributed. These results indicate that E1 is a stable defect that is formed during growth to compensate for the tensile strain caused by N. Furthermore, E1 was confirmed to act as a recombination center by comparing its activation energy with that of the recombination current in the depletion region of the alloy. However, this technique cannot characterize the electron−hole (e–h) recombination process. For that, double carrier pulse deep level transient spectroscopy is used to confirm the non-radiative e – h recombination process through E1, to estimate the capture cross section of holes, and to evaluate the energy of multi-phonon emission. Furthermore, a configuration coordinate diagram is modeled based on the physical parameters of E1.

Background: Inflammation of peripheral airways is implicated in the pathophysiology of severe asthma. However, contributions of peripheral airway inflammation to airway caliber/function in patients with stable asthma, including those with mild to moderate disease, remain to be confirmed. Objectives: To determine whether peripheral airway inflammation affects airway function in patients with asthma. Methods: In 70 patients with mild to severe asthma, alveolar nitric oxide [CANO(TMAD)] levels were examined as a noninvasive biomarker of peripheral airway/alveolar inflammation. CANO(TMAD) and maximal nitric oxide (NO) flux in the airway compartment, J’awNO, were estimated with a model that incorporated trumpet-shaped airways and axial diffusion using exhaled NO output at different flow rates. Measures of pulmonary function were then assessed by spirometry and an impulse oscillometry system, and their bronchodilator reversibility was examined. Results: CANO(TMAD) levels were not correlated with pre- or postbronchodilator spirometric values, but were significantly associated with prebronchodilator reactance at low frequency (Xrs5) (rho = –0.31, p = 0.011), integrated area of low-frequency Xrs (AX) (rho = 0.35, p = 0.003) and negative frequency dependence of resistance (Rrs5-Rrs20) (rho = 0.35, p = 0.004). Furthermore, CANO(TMAD) levels were associated with bronchodilator reversibility of FEV1, FEF25–75%, Xrs5 and AX (rho = 0.35, 0.31, –0.24 and –0.31, respectively; p ≤ 0.05 for all). No variables were related to J’awNO. Conclusions: Elevated CANO(TMAD), but not J’awNO, partly reflects reversible airway obstruction originating in the peripheral airway. These findings indicate the involvement of peripheral airway inflammation in physiological abnormalities in asthma.

Background: Substance P (SP) is involved in the pathogenesis of cough in animal models. However, few studies in humans have been reported and the roles of SP in clinical cough remain obscure. Objectives: To clarify the relevance of plasma levels of SP in patients with persistent cough. Methods: We studied 82 patients with cough persisting for at least 3 weeks and 15 healthy controls. Patients were classified as having asthmatic cough (cough-variant asthma and cough-predominant asthma; n = 61) or nonasthmatic cough (n = 21; postinfectious cough, n = 6; gastroesophageal reflux disease, n = 5; idiopathic cough, n = 5, and others, n = 5). Correlations were evaluated between plasma SP levels as measured with ELISA and methacholine airway hyperresponsiveness (airway sensitivity and airway reactivity), capsaicin cough sensitivity, sputum eosinophil and neutrophil counts, and pulmonary function. Results: Plasma SP levels were significantly elevated in patients with both asthmatic and nonasthmatic cough compared with controls [31.1 pg/ml (range 18.0–52.2) and 30.0 pg/ml (range 15.1–50.3) vs. 15.4 pg/ml (range 11.3–23.7); p = 0.003 and p = 0.038, respectively] but did not differ between the two patient groups (p = 0.90). Plasma SP levels correlated with airway sensitivity (threshold dose of methacholine) in the patients with asthmatic cough (r = –0.37, p = 0.005) but not with airway reactivity, cough sensitivity, FEV1 values, or sputum eosinophil and neutrophil counts in either group. Conclusions: Increased levels of SP in plasma are associated with persistent cough in humans and might be related to airway sensitivity in asthmatic cough.

Pemetrexed is an antimetabolic agent and is well-known as a potent inhibitor of thymidylate synthase (TS). It also inhibits dihydrofolate reductase (DHFR) and glycinamide ribonucleotide formyl transferase (GARFT). We reported an intriguing case in which a non-small cell lung cancer patient who was refractory to pretreatment with S-1, a strong TS inhibitor, showed good response to pemetrexed treatment.

We investigated the relation between N–H complexes and the electrical properties of GaAsN, which is a potential material for fabricating super-high-efficiency multi-junction tandem solar cells. In order to separate the effect of other residual carrier such as carbon in a GaAsN film on the electrical properties, hydrogen (H) ions were implanted into GaAsN grown by chemical beam epitaxy (CBE) and then rapid thermal annealing from 250 to 650 °C was carried out. Two N–H complexes related to local vibrational modes (LVMs) in GaAsN were observed at 3098 and 3125 cm−1. With an increasing annealing temperature, the integrated peak intensity of the 3098 cm−1 peak (I3098) decreased, while that of the 3125 cm−1 peak (I3125) increased. This indicates that N–H complexes related to the 3125 cm−1 peak are thermally more stable than those related to the other peak. The hole concentrations and mobilities exhibited an increasing trend until an annealing temperature of 550 °C was reached. Their increases are attributed to the removal of donor-type defects. It is suggested that the N–H complexes related to the 3098 cm−1 peak are electrically active, while those giving the 3125 cm−1 peak are inactive.

The efficiency potentials of future generation solar cells such as wide bandgap chalcopyrite, Cu2ZnSnS4 (CZTS), Cu2ZnSn(S,Se)4 (CZTSSe), multi quantum well (MQW) and quantum dot (QD) solar cells are discussed on the basis of external radiative efficiency (ERE), open-circuit voltage loss, fill factor loss, and nonradiative recombination losses. CZTS and CZTSSe solar cells have efficiency potentials of more than 20% owing to the improvement in ERE from about 0.001 to 1%. MQW and QD cells have efficiency potentials of 24.8%, and 25.8% owing to the improvement in ERE from around 0.01 to 0.1%, and 1%, respectively. In this paper, the effects of nonradiative recombination on the properties of future generation solar cells are discussed.