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This paper presents an ultra-low-profile copper indium gallium selenide (CIGS) based solar cell integrated antenna with a high form factor. A tiny slot was etched from the solar cell to develop an ultra-low-profile solar-cell-integrated antenna. This tiny slot increases the form factor due to the small clearance area from the solar cell. A ground-radiation antenna design method was applied in which lumped elements were employed inside the tiny slot for antenna operation. Another substrate was used under the solar cell for designing the feeding structure with lumped elements connected to the tiny slot using via holes. A prototype was fabricated and measured to verify the operation of a built-in solar-cell antenna and validate the simulated results. The measured results demonstrate that the solar-cell-integrated antenna covers the entire frequency range of the Industrial Scientific Medical band, from 2.4 to 2.5 GHz, with a maximum gain of 2.79 dBi and radiation efficiency higher than 80% within the impedance bandwidth range. Moreover, the proposed design has an ultra-low-profile structure of only 0.0046 λo, where λo represents the free space wavelength at 2.45 GHz, and a high form factor of 99.1% with no optical blockage. The antenna and solar cell were designed to avoid affecting the performance of each other using the radio-frequency decoupler.

Vertical heterostructures of graphene and MoS2 are realized by successive growth of MoS2 and graphene, each by chemical vapor deposition. The MoS2 coverage on graphene is controlled by ozone treatment of graphene, which affects the absorption and aggregation of the nucleation promoter perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) for MoS2 seeds on the graphene surface. Mostly single or bilayer MoS2 flakes are grown on graphene with negligible defects even after the ozone treatment and the high-temperature growth process (up to 650 °C). Efficient charge transfer in the grown heterostructures is observed in the photoluminescence and photoresponses of devices based on the heterostructures.

In this study, we proposed a fast and effective technique to remove residual poly(methyl methacrylate) (PMMA) after its use as a supporting layer for transferring graphene films on a large scale with high productivity. We utilized a methyl isobutyl ketone (MIBK) solution, which is commonly used to develop PMMA layers, for an e-beam lithography process. This was done because MIBK molecules tend to inflate the PMMA layer, weakening the link between PMMA and the graphene surface. Field-effect transistors were fabricated on the transferred graphene, with which we addressed the Dirac points and their carrier motilities. We observed that due to the reduced p-doping effects, the Dirac points were located closer to the zero-gate bias compared to those obtained using the acetone treatment. Finally, the average device mobility reached 5400 and 3900 cm2/Vs for holes and electrons, respectively. These values are more than five times the values obtained using the conventional acetone treatment.

Large-scale growth of mostly monolayer molybdenum disulfide (MoS2) on quartz, sapphire, SiO2/Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeter-scale areas with large flakes and films of MoS2 on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS2 is monolayer with high quality and uniformity. The MoS2 field effect transistors based on the as-grown MoS2 exhibit carrier mobility of 1–2 cm2V−1s−1 and On/Off ratio of ~104 while showing large photoresponse. Our results provide a simple approach to realize MoS2 on various substrates for electronics and optoelectronics applications.

This study investigates recent advances in photoelectron emission generated by irradiating ultrashort lasers on metallic nanostructures and low-dimensional carbon materials. Recently, primary focus has been on improving the efficiency of emitters, i.e. increasing the number of field-emitted electrons and their respective kinetic energies. An example of this is the modification of the conventional metal nanotip through adiabatic nanofocusing and various plasmonic metal structures, such as nanorods and bowtie antenna. The coherent emission control with two color irradiation enabled modulation in the emission yield. In addition, THz waves near the metallic nanostructure induced a highly accelerated, monochromatic energy. Alternative to metallic nanotips, carbon nanotubes are emerging as efficient photoelectron emitters, due to the large enhancement factor associated with their high aspect ratio and damage threshold. They particularly allowed the use of femtosecond light sources with a relatively short wavelength, resulting in the generation of photoelectrons with a narrow bandwidth. Additionally, electronic control over the single-walled nanotubes band structure added a degree of freedom for controlling the electron emission yield. Finally, we review the strong-field tunneling emission in graphene edge, with the emission yield showing an anomalous increase of nonlinear order, corresponding to the deep strong tunneling regime.

Most microbial detection techniques require pretreatment, such as fluorescent labeling and cultivation processes. Here, we propose novel tools for classifying and identifying microorganisms such as molds, yeasts, and bacteria based on their intrinsic dielectric constants in the THz frequency range. We first measured the dielectric constant of films that consisted of a wide range of microbial species, and extracted the values for the individual microbes using the effective medium theory. The dielectric constant of the molds was 1.24–1.85, which was lower than that of bacteria ranging from 2.75–4.11. The yeasts exhibited particularly high dielectric constants reaching 5.63–5.97, which were even higher than that of water. These values were consistent with the results of low-density measurements in an aqueous environment using microfluidic metamaterials. In particular, a blue shift in the metamaterial resonance occurred for molds and bacteria, whereas the molds have higher contrast relative to bacteria in the aqueous environment. By contrast, the deposition of the yeasts induced a red shift because their dielectric constant was higher than that of water. Finally, we measured the dielectric constants of peptidoglycan and polysaccharides such as chitin, α-glucan, and β-glucans (with short and long branches), and confirmed that cell wall composition was the main cause of the observed differences in dielectric constants for different types of microorganisms.

Electrical characteristics of ion gels prepared by loading different amounts of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) in Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are investigated and compared with those of ion liquid, [EMIM][TFSI] for possible application as a gate stack for flexible electronic devices. Capacitance and impedance as a function of frequency are measured, which can be well accounted for by a simple circuit model identifying the local device components. The operation of a flexible field effect transistor based on graphene and the ion gel as a top gate stack is also demonstrated.

We investigate the interaction of carbon nanotubes (CNTs) embedded in a polymer matrix [poly(methyl methacrylate) (PMMA)] with Ar plasma, which results in the formation of PMMA nanostructures, as CNTs act as an etching mask. Because of the large differences in the Ar ion sputtering yields between CNTs and PMMA, PMMA lines with the width comparable to that of CNTs and as high as 20 nm (for single-walled CNTs) or 80 nm (for multiwalled CNTs) can be obtained after repeated exposure of CNT/PMMA films to Ar plasma. We also follow the etching process by investigating changes in the IV characteristics and Raman spectra of CNTs after each exposure to Ar plasma, which shows progressive defect generations in CNTs while they maintain structural integrity long enough to act as the etching mask for PMMA underneath. We demonstrate that the PMMA nanostructure patterns can be transferred to a different polymer substrate using nanoimprinting.

We report an in situ characterization of transition-metal dichalcogenide (TMD) monolayers and twisted bilayers using a high-speed second-harmonic generation (SHG) imaging technique. High-frequency laser modulation and galvano scanning in the SHG imaging enabled a rapid identification of the crystallinity in the TMD, including the orientation and homogeneity with a speed of 1 frame/s. For a twisted bilayer MoS2, we studied the SHG peak intensity and angles as a function of the twist angle under a strong interlayer coupling. In addition, rapid SHG imaging can be used to visualize laser-induced ablation of monolayer and bilayer MoS2 in situ under illumination by a strong femtosecond laser. Importantly, we observed a characteristic threshold behavior, the ablation process occurred for a very short time duration once the preheating condition was reached. We investigated the laser thinning of the bilayer MoS2 with different twist angles. When the twist angle was 0°, the SHG decreased by approximately one-fourth of the initial intensity when one layer was removed. Conversely, when the twist angle was approximately 60° (the SHG intensity was suppressed), the SHG increased abruptly close to that of the nearby monolayer when one layer was removed. Precise layer-by-layer control was possible because of the unique threshold behavior of the laser-induced ablation.

We investigated the THz dielectric constant of a wide range of microbial species in conjunction with their cell wall compositions. In general, the dielectric constant of the molds was lower than that of bacteria, whereas the yeasts exhibited particularly high dielectric constants, which were higher than that of water. The measurement on the dielectric constants of peptidoglycan and polysaccharides such as chitin, $\alpha$-glucan, and $\beta$-glucans revealed that cell wall composition is the main cause of the observed differences in dielectric constants for different types of microorganisms.

In this study, we developed a rapid three-dimensional (3D) time-of-flight imaging tool for inspection of packaged semiconductor chips, using terahertz (THz) time-domain spectroscopy techniques. A high-speed THz system based on the optical sampling by cavity tuning technique is incorporated with a 2-axis galvano scanner to deliver a scanning speed of more than 100 Hz/pixel with a signal-to-noise ratio larger than 20 dB. Through the use of the Hilbert transformation, we reconstruct the 3D structure of the packaged chip in a nondestructive manner. Additionally, the use of frequency-selective imaging allows us to manipulate image resolution, the higher resolution was obtained when monitored using the higher frequency component. Further, using phase information, we were able to detect and identify defects in the packaged chip, such as the delamination area and epoxy-rich regions.

Optically controlled spectral-band selective terahertz (THz) modulators based on metal-organic hybrid metamaterials were investigated. An artificially structured material, which consists of two single split-ring resonators put together on the split gap side, was patterned on a silicon substrate to generate frequency-selective properties. An active layer of an organic thin film (fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester, also called PCBM) was deposited on the metamaterial-silicon structure for modulating the transmission of incident THz radiation. The metal-organic hybrid metamaterials enabled active control of spectral bands present in the transmission spectra of THz waves. In addition, the changes in the photo-excited carrier density due to the transfer of charges between the layers were quantitatively analyzed by simulation results.

In this paper, we demonstrate that terahertz (THz) metamaterials are powerful tools for determination of dielectric constants of polymer films and polar liquids. As we deposit a dielectric film on a metamaterial, the resonant frequency shifts, but saturates at a specific thickness due to the limited sensing volume of the metamaterial. From the saturated value, we can extract the dielectric constants of various polymers that are transparent to the THz frequency range. In addition, we fabricated a microfluidic channel that contains the metamaterials to address the real dielectric constants for a polar liquid solution. This was possible due to an extremely confined electric field near the gap area of the metamaterials, enabling us to employ very thin liquid layers. We found that the resonance shifts do not depend critically on the imaginary dielectric constants, proving that our approach can be universal in terms of various materials, including absorptive materials. As an example, the dielectric constants of sodium chloride and potassium chloride solutions have been determined with various concentrations. Our experimental findings were successfully confirmed by finite-difference time-domain simulations.

We developed hybrid slot antenna structures for microbial sensing in the THz frequency range, where silver nanowires (AgNWs) were employed to increase the sensitivity. In order to fabricate the hybrid devices, we partially etched the AgNW in the slot antenna region, where we can expect the field enhancement effect at the AgNW tip. We measured the resonant-frequency shift observed upon the deposition of a polymer layer, and observed that the sensitivity increased upon the introduction of AgNWs, with an enhancement factor of more than four times (approximately six times in terms of figure-of-merit). The sensitivity increased with the AgNW density until saturation. In addition, we tested devices with PRD1 viruses, and obtained an enhancement factor of 3.4 for a slot antenna width of 3 μm. Furthermore, we performed finite-difference time-domain simulations, which confirmed the experimental results. The sensitivity enhancement factor decreased with the decrease of the slot width, consistent with the experimental findings. Two-dimensional mapping of the electric field confirmed the strong field localization and enhancement at the AgNW tips.

We demonstrate the development of an effective technique to remove the poly methyl methacrylate (PMMA) layer used for transferring graphene synthesized by a chemical vapor deposition (CVD). This was achieved utilizing electron-beam bombardment and following developing processes, prior to the use of conventional organic solvents. Field-effect transistors were fabricated on the transferred graphene in order to explore their Dirac points and carrier motilities in the ambient condition - the results were then compared with those from the conventional wet chemical treatment. It was found that the Dirac points were located close to the zero gate bias when compared to those from the acetone and the acetic acid treatments. Most significantly, the field-effect mobility reached as high as 6770 cm2/Vs and 7350 cm2/Vs on average for holes and electrons, respectively, which is more than seven times improvement in comparison to conventional acetone treatments for CVD-grown graphene devices.

We demonstrate substrate electron-beam-induced current (s-EBIC) measurements of individual single-walled carbon nanotubes (SWNTs) by measuring the current collected by the substrate electrode, which penetrates through the insulating oxide layer. We found that s-EBIC provided better image contrast than ordinary secondary electron imaging methods for locating SWNTs that are in contact with metal electrodes. The s-EBIC has been measured for different acceleration voltages and probe currents. We found that s-EBIC did not depend critically on the acceleration voltage when the e-beam irradiated an insulating layer as compared to the case when it irradiated metal electrodes. Importantly, s-EBIC signals were increased by more than 10%, when the SWNT part was irradiated, and this makes s-EBIC imaging a very useful tool for locating individual SWNTs efficiently.

We used electrostatic force microscopy (EFM) to investigate local conducting states of atomically thin individual graphene oxide (GO) sheets and monitor the spatial evolution of their conducting properties during the reduction process. Because of the thinness of the GO sheets and finite carrier density, the electric field is partially screened in the reduced GO, which is manifested in the EFM phase signals. We found inhomogeneous oxidation states in as-prepared GO sheets and followed the evolution of reduction process in the individual GO sheets during both thermal and chemical reduction. We also compared the EFM measurement results with simultaneous IV characteristics to assess correlations between two measurements.

Most semiconductors have surface dynamics radically different from its bulk counterpart due to the surface state. However, direct observation of the surface carrier dynamics has been limited to nano structures where the surface-to-volume ratio is very high. Here, we develop a new type of terahertz (THz) nanoscopy to investigate surface dynamics of bulk semiconductors, using metallic nano gap accompanying strong THz field confinement. We observed that carrier lifetimes of InP and GaAs dramatically as the gap size decreases, and that they return to their bulk values once the nano patterns are removed.

We report fully solution-processed fabrication of transparent conducting oxide-free counter electrodes (CEs) for dye-sensitized solar cells (DSSCs) by combining spray-coating of single-wall carbon nanotubes (SWCNTs) and chemical reduction of chloroplatinic acid precursor to platinum nanoparticles (Pt NPs) with formic acid. The power conversion efficiency of a semitransparent DSSC with such SWCNT-based CE loaded with Pt NPs is comparable to that of a control device with a conventional CE. Quantification of Pt loading shows that network morphology of entangled SWCNTs is efficient in forming and retaining chemically reduced Pt NPs. Moreover, electron microscopy and electrochemical impedance spectroscopy results show that mainly Pt NPs, which are tens of nanometers in diameter and reside at the surface of SWCNT CEs, contribute to electrocatalytic activity for triiodide reduction, to which we attribute strong correlation between power conversion efficiency of DSSCs and time constant deduced from equivalent-circuit analysis of impedance spectra.

We report the fabrication of efficient indium-tin-oxide-free organic solar cells based on poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM). All layers of the devices from the lowermost silver nanowire cathode to the uppermost conducting polymer anode are deposited from solution and processed at plastic-compatible temperatures

Vertically aligned arrays of ultralong ZnO nanowires were synthesized on SiO2 substrates with carbothermal vapor phase transport method with Au seeding layer. High density of vertically aligned ZnO nanowires with lengths from a few to ∼300 μm could be grown by controlling growth conditions. Supply of high concentration of Zn vapor and control of the ratio between Zn vapor and oxygen are found to have the most significant effects on the growth of long ZnO nanowires in the vapor–solid growth mechanism. The nanowires are of high crystalline quality as confirmed by various structural, compositional, and luminescent measurements. Luminescent and electrical properties of ZnO nanowires with different growth conditions were also investigated.

Melatonin is synthesized from acetylserotonin, which is a deacetylated product of serotoinin. Simultaneous analysis of melatonin and its precursors in rat urine was performed using their (N,O)-ethoxycarbonyl/N-pentafluoropropionyl (EOC/PFP) derivatives by gas chromatography–mass spectrometry (GC–MS). The mass spectral data of acetylserotonin as mono-O-EOC/mono-N-PFP and serotonin as di-(N,O)-EOC/di-N-PFP derivatives were newly established. This method exhibited good linearity (r ≥ 0.996), repeatability (% relative standard deviation = 6.9–9.4), accuracy (% relative error = −8.9 to 8.6) with detection limits of 0.005 to 0.03 ng mL−1. This method was developed for the simultaneous measurement of melatonin and its precursors in rat urine.

Graphene, functionalized with oleylamine (OA) and soluble in non-polar organic solvents, was produced on a large scale with a high yield by combining the Hummers process for graphite oxidation, an amine-coupling process to make OA-functionalized graphite oxide (OA-GO), and a novel reduction process using trioctylphosphine (TOP). TOP acts as both a reducing agent and an aggregation-prevention surfactant in the reduction of OA-GO in 1,2-dichlorobenzene (DCB). The reduction of OA-GO is confirmed by X-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, X-ray diffraction, thermogravimetric analysis, and Raman spectroscopy. The exfoliation of GO, OA-GO, and OA-functionalized graphene (OA-G) is verified by atomic force microscopy. The conductivity of TOP-reduced OA-G, which is deduced from the current–voltage characteristics of a vacuum-filtered thin film, shows that the reduction of functionalized GO by TOP is as effective as the reduction of GO by hydrazine.

Growth of GaN nanowires by using a vapor-liquid-solid (VLS) mechanism with Pt catalysts was investigated. Single-crystal GaN nanowires with diameters of ∼100 nm and lengths of ∼5 μm were grown with Pt and with the well-known VLS catalyst of Ni. The growth rate of nanowires with Pt was lower than that with Ni under identical processing conditions. Pt-Ga alloy globules were observed by Transmission electron microscopy at the ends of the nanowires which lead the growth by the VLS mechanism. Electrical data from individual nanowires indicated high conductivity associated with high electron concentration in the Pt-GaN nanowires.

Nonlinear optical characteristics of single-walled carbon nanotubes (SWCNTs) dispersed in dichlorobenzene and imbedded in polymer were investigated at 800 nm using the time-resolved optical Kerr gate technique. For systematic study of the influence of SWCNT bundling on optical nonlinearities, SWCNT solutions with different concentrations and a series of SWCNT/polymer composites deposited on glass substrates with different concentrations and thicknesses were prepared. The nonlinear response was comparable to the pulse duration of the laser used (∼90 fs) both in SWCNT solutions and SWCNT/polymer composites. Over three orders of magnitude enhancement was observed in the third-order nonlinear susceptibility of SWCNT/polymer composite film compared with that of SWCNT solution. An appreciable reduction of microscopic and macroscopic nonlinearities was observed with increasing SWCNT concentrations due to stronger bundling of SWCNTs.

Vertically aligned ZnO nanorods have been grown on silicon substrates pre-coated with thin, less than 10 nm, textured ZnO seeding layers via a vapor-solid mechanism. The ZnO seeding layers, which were essential for vertical alignment of ZnO nanorods without using any metal catalyst, were prepared by decomposing zinc acetate. The structure and the luminescence properties of the ZnO nanorods synthesized onto ZnO seeding layers were investigated and their morphologies were compared with those of single-crystalline GaN substrates and silicon substrates covered with sputtered ZnO flms. Patterning of ZnO seed layers using photolithography allowed the fabrication of patterned ZnO-nanorod arrays.

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology.

We report optical scanning measurements on photocurrent in individual Si nanowire field effect transistors (SiNW FETs). We observe increases in the conductance of more than 2 orders of magnitude and a large conductance polarization anisotropy of 0.8, making our SiNW FETs a polarization-sensitive, high-resolution light detector. In addition, scanning images of photocurrent at various biases reveal the local energy-band profile especially near the electrode contacts. The magnitude and polarity of the photocurrent vary depending on the gate bias, a behavior that can be explained using band flattening and a Schottky-barrier-type change. This technique is a powerful tool for studying photosensitive nanoscale devices.

We demonstrated the fabrication of terahertz metamaterial sensor for the accurate and on-site detection of yeast using electrohydrodynamic jet printing, which is inexpensive, simple, and environmentally friendly. The very small sized pattern up to 5 ?m-width of electrical split ring resonator unit structures could be printed on a large area on both a rigid substrate and flexible substrate, i.e. silicon wafer and polyimide film using the drop on demand technique to eject liquid ink containing silver nanoparticles. Experimental characterization and simulation were performed to study their performances in detecting yeast of different weights. It was shown that the metamaterial sensor fabricated on a flexible polyimide film had higher sensitivity by more than six times than the metamaterial sensor fabricated on a silicon wafer, due to the low refractive index of the PI substrate and due to the extremely thin substrate thickness which lowers the effective index further. The resonance frequency shift saturated when the yeast weights were 145 ?g and 215 ?g for metamaterial structures with gap size 6.5 ?m fabricated on the silicon substrate and on the polyimide substrate, respectively.

We performed time-domain terahertz (THz) spectroscopy on reduced graphene oxide (rGO) network films coated on quartz substrates from dispersion solutions by spraying method. The rGO network films demonstrate high conductivity of about 900 S/cm in the THz frequency range after a high temperature reduction process. The frequency-dependent conductivities and the refractive indexes of the rGO films have been obtained and analyzed with respect to the Drude free-electron model, which is characterized by large scattering rate. Finally, we demonstrate that the THz conductivities can be manipulated by controlling the reduction process, which correlates well with the DC conductivity above the percolation limit. (C) 2013 Optical Society of America

We explored single-layer graphene and graphene field-effect transistors immersed in nitric acid using in-situ Raman spectroscopy. Two distinct stages were observed in the chemical doping process. The first stage involved blue shifts of the G and 2D peaks, whose saturation occurred rapidly with a time constant in the range of 10–25 s depending on the molar concentration of the acid. In the second stage, the intensity of the D peak, which was associated with structural defect formation, increased for a relatively long period of time. Since the major doping effects appeared during the first stage, the optimal doping conditions under which no noticeable structural defect formation occurred can be determined by monitoring the frequency shift. Transient doping concentrations along with structural defect densities were obtained from the Raman peak positions and intensities. We found that the doping-induced shift in the Dirac point in graphene field-effect transistors exhibited a fast response with respect to fre...

We synthesized vertically aligned nail-shaped ZnO nanocrystal arrays on silicon substrates via a combination of a carbothermal reduction method and textured ZnO seeding layers that were precoated on silicon substrates by thermally decomposing zinc acetate, and studied their optical properties using cathodoluminescence (CL) and photoluminescence techniques. The ZnO nanonails show a sharp band-gap edge UV emission and a defect-related broad green emission. Monochromatic CL images of an individual ZnO nanonail show variations in spatial distributions of respective CL bands that had different origins. We attribute the spatial variation of CL images to an uneven distribution of luminescent defects and/or a structure-related light out-coupling from hexagonal ZnO nanostructures. The most distinct CL feature from the hexagonal head of an individual ZnO nanonail was the occurrence of a series of distinct resonant peaks within the visible wavelength range. It appeared that the head of a nanonail played the role of a hexagonal cavity so that polarization-dependent whispering gallery modes were stimulated by electron beam excitation.

Unlike in linear nanostructures, photocurrent generated in single-layer graphene (SLG) is expected to display two-dimensional characteristics. This allows the investigation of carrier dynamics, in relation to several spatially varying factors (such as the location of photocurrent generation and collection) and the overall electron band configuration of the SLG. In this letter, we use scanning photocurrent microscopy to investigate the spatial mapping of photocurrent generation and collection in SLG in a multielectrode geometry. A strong electric field near metal-graphene contacts leads to efficient photocurrent generation, resulting in >30% efficiency for electron-hole separation. The polarity and magnitude of contact photocurrent are used to study the band alignment and graphene electrical potential near contacts, from which it is shown that there exist large-scale spatial variations in graphene electric potential. Our measurements with a multielectrode device configuration reveal that photocurrent is distributed with a clear directional dependence among different collector electrodes. In the same measurement scheme, we also determine the majority carrier in graphene under different gate conditions by imaging the thermocurrent generated by laser-induced heating of electrodes.

We report optical scanning measurements on photocurrent in individual Germanium nanowire transistors. Photoconductivity measurements reveal that Germanium nanowire can be used as an ultrasensitive, nanoscale photodetectors, especially in the visible range. The photoconductivity shows a strong saturation behavior unlike Schottky photocurrents observed at the metal contacts.

The shape dependence of target materials on the sensitivity of terahertz metamaterial sensors was investigated. Polystyrene microbeads with a known dielectric constant and spherical, ovular, lens-shaped, and star-shaped structures were studied. The resonant frequency showed a clear red-shift after the deposition of low-density microbeads owing to the change in the dielectric environment in the gap area of the metamaterials. Results of simulations based on a finite-difference time-domain (FDTD) method, in which the known dielectric constant of a polystyrene sphere was used, showed excellent agreement with experimental results. The shift in the resonant frequency increased linearly with the surface density, saturating at 60-80 GHz when the gap area was full of microbeads. More importantly, the resonant frequency shift was higher for non-spherical microbeads, such as the star-shaped microbeads. Therefore, the shape of the individual target material was a crucial factor in determining metamaterial sensor sensitivity. (C) 2015 Optical Society of America.

We demonstrate a transition from exciton resonance to frequency mixing for the first time, in the nondegenerate femtosecond four wave mixing (FWM) of a GaAs-AlGaAs multiple quantum well. The frequency mixing which is dominant at high intensity and high detuning survives only within the pulse-width.

We have grown defect-rich ZnO nanowires on a large scale by the vapour phase reaction method without using any metal catalyst and vacuum system. The defects, including zinc vacancies, oxygen interstitials and oxygen antisites, are related to the excess of oxygen in ZnO nanowires and are controllable. The nanowires having high excess of oxygen exhibit a brown-colour photoluminescence, due to the dominant emission band composed by violet, blue and green emissions. Those having more balanced Zn and O show a dominant green emission, giving rise to a green colour under UV light illumination. By O2-annealing treatment the violet luminescence after the band-edge emission UV peak can be enhanced for as-grown nanowires. However, the green emission shows different changing trends under O2-annealing treatment, associated with the excess of oxygen in the nanowires.

We report photoconductivity (PC) in individual germanium nanowire field effect transistors (GeFETs). PC measurements with a global illumination reveal that GeFETs can be used as a polarization-sensitive nanoscale light detector in the visible range. It is also found that the PC shows sensitive optical response especially in the low intensity regime. We observe a high internal gain in PC in conjunction with strong saturation behavior, which is attributed to the filling of surface trapping states. This mechanism for high internal gain is consistent with spatially resolved scanning photocurrent measurements, whose results confirm that optical absorption is in the linear regime.