1. Ti and NiPt/Ti liner silicide contacts for advanced technologies
- Author
-
Praneet Adusumilli, B. Zhang, Chanro Park, B. Liu, Jin Cai, Balasubramanian S. Pranatharthi Haran, J. J. An, D. Ferrer, E. Engbrecht, Ahmet S. Ozcan, Hiroaki Niimi, R. Divakaruni, Y. Yan, R. Bolam, Huiming Bu, F. Chafik, Bruce B. Doris, S. Stiffler, Dechao Guo, B. Morgenfeld, Henry K. Utomo, Nicolas Loubet, N. Zhan, D. Hilscher, Jeffrey C. Shearer, W. Henson, C. Tran, C-H. Lin, James Chingwei Li, M. Oh, Hemanth Jagannathan, Jody A. Fronheiser, D. Kang, Ruilong Xie, T. Nesheiwat, Zuoguang Liu, Ravikumar Ramachandran, S. Allen, Walter Kleemeier, Oleg Gluschenkov, J. Rice, R. Lallement, Christian Lavoie, Jiseok Kim, Nicolas Breil, Siyuranga O. Koswatta, Emre Alptekin, C. Goldberg, Noah Zamdmer, Shogo Mochizuki, Veeraraghavan S. Basker, Gen Tsutsui, Keith Kwong Hon Wong, S. Fan, N. Makela, S. Jain, James J. Demarest, Christopher D. Sheraw, C.-C. Yeh, Mark Raymond, Anil Kumar, Yoo-Mi Lee, Vamsi Paruchuri, V. Sardesai, Vimal Kamineni, Woo-Hyeong Lee, Y. Ke, M. Yu, Andre Labonte, Tenko Yamashita, C. Niu, and S. Narasimha more...
- Subjects
010302 applied physics ,Materials science ,Dopant ,business.industry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Silicide ,Electronic engineering ,Optoelectronics ,Node (circuits) ,0210 nano-technology ,business - Abstract
We discuss the transition to Ti based silicides for source-drain (SD) contacts for 3D FinFET devices starting from the 14nm node & beyond. Reductions in n-FET & p-FET contact resistances are reported with the optimization of metallization process & dopant concentrations. The optimization of SiGe epitaxy and addition of a thin interfacial NiPt(10%) are found to significantly improve p-FET contact performance. more...
- Published
- 2016
- Full Text
- View/download PDF