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This article presents a low-jitter and low-spur charge-sampling phase-locked loop (CSPLL). A charge-domain sub-sampling phase detector is introduced to achieve a high phase-detection gain and to reduce the PLL in-band phase noise. Even without employing any power-hungry isolation buffers, the proposed phase detector dramatically suppresses the reference spurs by both minimizing the modulated capacitance seen by the voltage-controlled oscillator (VCO) tank and by reducing the duty cycle of the sampling clock. A 50- $\mu \text{W}$ RF-dividerless frequency-tracking loop is also introduced to lock the CSPLL robustly when the VCO faces a sudden frequency disturbance. Fabricated in a 40-nm CMOS process, the prototype CSPLL occupies a core area of 0.13 mm2 and synthesizes 9.6-to-12-GHz tones using a 100-MHz reference. At 11.2 GHz, it achieves a reference spur of −77.3 dBc and an RMS jitter of 48.6 fs while consuming 5 mW. [ABSTRACT FROM AUTHOR]

In this paper, we propose a method to suppress supply pushing of an LC oscillator such that it may directly operate from a switched-mode dc–dc converter generating fairly large ripples. A ripple replication block (RRB) generates an amplified ripple replica at the gate terminal of the tail current source to stabilize the oscillator’s tail current and thus its oscillating amplitude. The parasitic capacitance of the active devices and correspondingly the oscillation frequency are stabilized in turn. A calibration loop is also integrated on-chip to automatically set the optimum replication gain that minimizes the variation of the oscillation amplitude. A 4.9–5.6-GHz oscillator is realized in 40-nm CMOS and occupies 0.23 mm2 while consuming 0.8–1.3 mW across the tuning range (TR). The supply pushing is improved to <1 MHz/V resulting in a low < −49-dBc spur due to 0.5–12-MHz sinusoidal supply ripples as large as 50 mVpp. We experimentally verify the effectiveness of the proposed technique also in face of saw-tooth, multi-tone, and modulated supply ripples. [ABSTRACT FROM AUTHOR]

This paper proposes an ultra-low-voltage (ULV) fractional-N all-digital PLL (ADPLL) powered from a single 0.5-V supply. While its digitally controlled oscillator (DCO) runs directly at 0.5 V, an internal switched-capacitor dc-dc converter “doubles” the supply voltage to all the digital circuitry and particularly regulates the time-to-digital converter (TDC) supply to stabilize its resolution, thus maintaining fixed in-band phase noise (PN) across process, voltage, and temperature (PVT). The ADPLL supports a two-point modulation and forms a Bluetooth low-energy (BLE) transmitter realized in 28-nm CMOS. It maintains in-band PN of −106 dBc/Hz [figure of merit (FoM) of −239.2 dB] and rms jitter of 0.86 ps while dissipating only 1.6 mW at 40-MHz reference. The power consumption reduces to 0.8 mW during the BLE transmission when the DCO switches to open loop. [ABSTRACT FROM AUTHOR]

A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising a scalable solution to enable future quantum computers. In this paper, a cryogenic control system is proposed, along with the required specifications, for the interface of the classical electronics with the quantum processor. To prove the advantages of such a system, the functionality of key circuit blocks is experimentally demonstrated. The characteristic properties of cryo-CMOS are exploited to design a noise-canceling low-noise amplifier for spin-qubit RF-reflectometry readout and a class-F2,3 digitally controlled oscillator required to manipulate the state of qubits. [ABSTRACT FROM AUTHOR]

This paper introduces a system-level approach to develop the first-ever fully discrete-time (DT) superheterodyne receiver (RX) for Internet-of-Things applications, such as Bluetooth low energy (BLE). It exploits fast switching speed and low internal capacitances of deep-nanoscale CMOS devices to realize a high intermediate-frequency (IF) architecture based on switched-capacitor-based charge-domain bandpass filtering. Power consumption is minimized by aggressively reducing the size of MOS devices and judiciously applying a sampling-rate decimation. The resultant increase in the flicker noise is mitigated by placing the IF frequency beyond the flicker corner frequency. Likewise, the decimation-induced aliasing is mitigated by DT filtering of preceding stages. The BLE RX is fully standard-compliant and achieves a record-low-power consumption of 2.75 mW (including its local oscillator) while delivering the state-of-the-art performance: 6.5-dB noise figure and −19-dBm third-order input intercept point, with a direct antenna connection and thus without the typical external bandpass filters. [ABSTRACT FROM AUTHOR]

In this paper, we propose a method to reduce a flicker (1/f) noise upconversion in voltage-biased RF oscillators. Excited by a harmonically rich tank current, a typical oscillation voltage waveform is observed to have asymmetric rise and fall times due to even-order current harmonics flowing into the capacitive part, as it presents the lowest impedance path. The asymmetric oscillation waveform results in an effective impulse sensitivity function of a nonzero dc value, which facilitates the 1/f noise upconversion into the oscillator’s 1/f3 phase noise. We demonstrate that if the \omega 0 tank exhibits an auxiliary resonance at 2 \omega 0 , thereby forcing this current harmonic to flow into the equivalent resistance of the 2 \omega 0 resonance, then the oscillation waveform would be symmetric and the flicker noise upconversion would be largely suppressed. The auxiliary resonance is realized at no extra silicon area in both inductor- and transformer-based tanks by exploiting different behaviors of inductors and transformers in differential- and common-mode excitations. These tanks are ultimately employed in designing modified class-D and class-F oscillators in 40 nm CMOS technology. They exhibit an average flicker noise corner of less than 100 kHz. [ABSTRACT FROM PUBLISHER]

We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply voltage and power without sacrificing its startup margin. It also reduces 1/f noise and supply pushing, thus allowing the ADPLL, after settling, to reduce its sampling rate or shut it off entirely during a direct DCO data modulation. The switching power amplifier integrates its matching network while operating in class-E/F2 to maximally enhance its efficiency at low voltage. The transmitter is realized in 28 nm digital CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy mode. [ABSTRACT FROM PUBLISHER]

This paper proposes a mm-wave frequency generation technique that improves its phase noise (PN) performance and power efficiency. The main idea is that a fundamental 20 GHz signal and its sufficiently strong third harmonic at 60 GHz are generated simultaneously in a single oscillator. The desired 60 GHz local oscillator (LO) signal is delivered to the output, whereas the 20 GHz signal can be fed back for phase detection in a phase-locked loop. Third-harmonic boosting and extraction techniques are proposed and applied to the frequency generator. A prototype of the proposed frequency generator is implemented in digital 40 nm CMOS. It exhibits a PN of -100\;\textdBc/Hz at 1 MHz offset from 57.8 GHz and provides 25% frequency tuning range (TR). The achieved figure-of-merit (FoM) is between 179 and 182 dBc/Hz. [ABSTRACT FROM PUBLISHER]

In this paper, we propose a new class of operation of an RF oscillator that minimizes its phase noise. The main idea is to enforce a clipped voltage waveform around the LC tank by increasing the second-harmonic of fundamental oscillation voltage through an additional impedance peak, thus giving rise to a class-F 2 operation. As a result, the noise contribution of the tail current transistor on the total phase noise can be significantly decreased without sacrificing the oscillator's voltage and current efficiencies. Furthermore, its special impulse sensitivity function (ISF) reduces the phase sensitivity to thermal circuit noise. The prototype of the class-F 2 oscillator is implemented in standard TSMC 65 nm CMOS occupying 0.2 mm 2 . It draws 32–38 mA from 1.3 V supply. Its tuning range is 19% covering 7.2–8.8 GHz. It exhibits phase noise of -\139 dBc/Hz at 3 MHz offset from 8.7 GHz carrier, translated to an average figure-of-merit of 191 dBc/Hz with less than 2 dB variation across the tuning range. The long term reliability is also investigated with estimated >10 year lifetime. [ABSTRACT FROM AUTHOR]

An oscillator topology demonstrating an improved phase noise performance is proposed in this paper. It exploits the time-variant phase noise model with insights into the phase noise conversion mechanisms. The proposed oscillator is based on enforcing a pseudo-square voltage waveform around the LC tank by increasing the third-harmonic of the fundamental oscillation voltage through an additional impedance peak. This auxiliary impedance peak is realized by a transformer with moderately coupled resonating windings. As a result, the effective impulse sensitivity function (ISF) decreases thus reducing the oscillator's effective noise factor such that a significant improvement in the oscillator phase noise and power efficiency are achieved. A comprehensive study of circuit-to-phase-noise conversion mechanisms of different oscillators' structures shows the proposed class-F exhibits the lowest phase noise at the same tank's quality factor and supply voltage. The prototype of the class-F oscillator is implemented in TSMC 65-nm standard CMOS. It exhibits average phase noise of -136 dBc/Hz at 3 MHz offset from the carrier over 5.9–7.6 GHz tuning range with figure-of-merit of 192 dBc/Hz. The oscillator occupies 0.12 mm^2 while drawing 12 mA from 1.25 V supply. [ABSTRACT FROM PUBLISHER]