1. Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation
- Author
-
A. Leone, A.M. Trione, and F. Junga
- Subjects
Nuclear and High Energy Physics ,Materials science ,Hydrogen ,Proton ,business.industry ,Infrared ,Transition temperature ,Doping ,Analytical chemistry ,chemistry.chemical_element ,Vanadium ,Condensed Matter::Materials Science ,Nuclear Energy and Engineering ,chemistry ,Electrical resistivity and conductivity ,Optoelectronics ,Astrophysics::Earth and Planetary Astrophysics ,Irradiation ,Electrical and Electronic Engineering ,Nuclear Experiment ,business - Abstract
The effects of proton irradiation on the electrical and infrared switching properties of vanadium oxides were studied. Bombardments are carried out to fluences typical of long-term space missions. Proton bombardment significantly alters semiconductor phase resistivity, infrared transmissivity, transition temperature and hysteresis width. It is concluded that amorphization, hydrogen doping, and strain-related effects are not operative in the changes observed. Vanadium and oxygen vacancies and/or interstitials remain the likely cause for these changes. Implications of these results on proposed damage models are discussed. >
- Published
- 1990