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In the present work, double‐barrier GaAs/AlGaAs resonant tunneling heterostructure nanodevices are investigated. Numerical results, obtained by in‐house developed software, based on a transient quantum drift‐diffusion model, are presented and discussed. In the model, quantum effects are incorporated via parameter dependencies on the carrier density gradients. Particular emphasis is given to the carrier densities and quasi‐Fermi levels as a function of applied bias, and electrostatic potential profiles inside the resonant tunneling diodes and superlattices.

We present numerical results for GaAs/AlGaAs double-barrier resonant tunneling heterostructure devices. A particular emphasis is given to the influence of quantum well thickness and number of quantum well layers on current-voltage characteristic and carrier density profile. In the paper, we discuss results obtained for spatial dependencies of carrier densities, the peak and the valley current density, and corresponding potentials in N-shaped current-voltage characteristics for various resonant tunneling heterostructures. Results are based on the transient quantum drift-diffusion model. They are obtained by solving a coupled system of partial differential equations directly and, in contrast to previous analysis, no decoupling algorithms, procedures, or methods are used.