Search

Motivated by the recent discovery of fractional quantum anomalous Hall states in moir\'e systems, we consider the possibility of realizing non-Abelian phases in topological minibands. We study a family of moir\'e systems, skyrmion Chern band (SCB) models, which can be realized in two-dimensional semiconductor/magnetic skyrmion heterostructures and also capture the essence of twisted transition metal dichalcogenide (TMD) homobilayers. We show using many-body exact diagonalization that, in spite of strong Berry curvature variations in momentum space, the non-Abelian Moore-Read state can be realized at half filling of the second miniband. These results demonstrate the feasibility of non-Abelian fractionalization in moir\'e systems without Landau levels and shed light on the desirable conditions for their realization. In particular, we highlight the prospect of realizing the Moore-Read state in twisted semiconductor bilayers., Comment: V1: 5 pages, 4 figures. V2: 5 pages, 5 figures. Added exact diagonalization results for twisted MoTe2. V3: 5 pages, 5 figures (main) + 13 pages, 9 figures (SM). Added results on Pfaffian vs anti-Pfaffian

We predict the emergence a state of matter with intertwined ferromagnetism, charge order and topology in fractionally filled moir\'e superlattice bands. Remarkably, these quantum anomalous Hall crystals exhibit a quantized integer Hall conductance that is different than expected from the filling and Chern number of the band. Microscopic calculations show that this phase is robustly favored at half-filling ($\nu=1/2$) at larger twist angles of the twisted semiconductor bilayer $t$MoTe$_2$, Comment: 5 + 5 pages, PRL Editors' Suggestion

We show that topological flat minibands can be engineered in a class of narrow gap semiconductor films using only an external electrostatic superlattice potential. We demonstrate that, for realistic material parameters, these bands are capable of hosting correlated topological phases such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases at zero magnetic field. Our results provide a path towards the realization of fractionalized topological states in a broad range of materials.

Semiconductor moir\'e superlattices provide a versatile platform to engineer new quantum solids composed of artificial atoms on moir\'e sites. Previous studies have mostly focused on the simplest correlated quantum solid - the Fermi-Hubbard model - where intra-atom interactions are simplified to a single onsite repulsion energy U. These studies have revealed novel quantum phases ranging from Mott insulators to quantum anomalous Hall insulators at a filling of one electron per moir\'e unit cell. New types of quantum solids should arise at even higher filling factors where the multi-electron configuration of moir\'e artificial atoms provides new degrees of freedom. Here we report the experimental observation of Wigner molecular crystals emerging from multi-electron artificial atoms in twisted bilayer WS2 moir\'e superlattices. Moir\'e artificial atoms, unlike natural atoms, can host qualitatively different electron states due to the interplay between quantized energy levels and Coulomb interactions. Using scanning tunneling microscopy (STM), we demonstrate that Wigner molecules appear in multi-electron artificial atoms when Coulomb interactions dominate. Three-electron Wigner molecules, for example, are seen to exhibit a characteristic trimer pattern. The array of Wigner molecules observed in a moir\'e superlattice comprises a new crystalline phase of electrons: the Wigner molecular crystal. We show that these Wigner molecular crystals are highly tunable through mechanical strain, moir\'e period, and carrier charge type. Our study presents new opportunities for exploring quantum phenomena in moir\'e quantum solids composed of multi-electron artificial atoms.

Remarkable recent experiments have observed fractional quantum anomalous Hall (FQAH) effects at zero field and unusually high temperatures in twisted semiconductor bilayer $t$MoTe$_2$. Intriguing observations in these experiments such as the absence of integer Hall effects at twist angles where a fractional Hall effect is observed, do however remain unexplained. The experimental phase diagram as a function of twist angle remains to be established. By comprehensive numerical study, we show that band mixing has large qualitative and quantitative effects on the energetics of competing states and their energy gaps throughout the twist angle range $\theta\leq 4^\circ$. This lays the ground for the detailed realistic study of a rich variety of strongly correlated twisted semiconductor multilayers and an understanding of the phase diagram of these fascinating systems., Comment: 5 + 2 pages, 7 Figures

Recent experiments on the twisted semiconductor bilayer system $t$MoTe$_2$ have observed integer and fractional quantum anomalous Hall effects, which occur in topological moir\'e bands at zero magnetic field. Here, we present a global phase diagram of $t$MoTe$_2$ throughout the filling range $0< n\leq 1$ substantiated by exact diagonalization calculations. At a magic angle, we find that the system resembles the lowest Landau level (LLL) to a remarkable degree, exhibiting an abundance of incompressible fractional quantum anomalous Hall states and compressible anomalous composite Fermi liquid states. Away from the magic angle, particle-hole symmetry is strongly broken. Some LLL-like features remain robust near half-filling, while others are replaced, predominantly by charge density waves near $n=0$ and anomalous Hall Fermi liquids near $n=1$. Among LLL-like phases, we find the anomalous composite Fermi liquid at $n=\frac{1}{2}$ to be most robust against deviations from the magic angle. Within the band-projected model, we show that strong particle-hole asymmetry above the magic angle results from interaction-enhanced quasiparticle dispersion near $n=1$. Our work sets the stage for future exploration of LLL-like and beyond-LLL phases in fractional quantum anomalous Hall systems., Comment: New numerical results and supplementary material added. Accepted to Phys. Rev. B. 8 + 8 pages, 7 + 9 figures

Recent experiments have produced evidence for fractional quantum anomalous Hall (FQAH) states at zero magnetic field in the semiconductor moir\'e superlattice system $t$MoTe$_2$. Here we argue that a composite fermion description, already a unifying framework for the phenomenology of 2d electron gases at high magnetic fields, provides a similarly powerful perspective in this new context. To this end, we present exact diagonalization evidence for composite Fermi liquid states at zero magnetic field in $t$MoTe$_2$ at fillings $n=\frac{1}{2}$ and $n=\frac{3}{4}$. We dub these non-Fermi liquid metals anomalous composite Fermi liquids (ACFLs), and we argue that they play a central organizing role in the FQAH phase diagram. We proceed to develop a long wavelength theory for this ACFL state that offers concrete experimental predictions upon doping the composite Fermi sea, including a Jain sequence of FQAH states and a new type of commensurability oscillations originating from the superlattice potential intrinsic to the system., Comment: Phys. Rev. Lett. journal version. Editors' Suggestion and Featured in Physics. main: 5 pages, 3 figures. SM: 5 pages, 3 figures

Semiconductor moir\'e superlattices have been shown to host a wide array of interaction-driven ground states. However, twisted homobilayers have been difficult to study in the limit of large moir\'e wavelength, where interactions are most dominant. Here, we conduct local electronic compressibility measurements of twisted bilayer WSe$_2$ (tWSe$_2$) at small twist angles. We demonstrate multiple topological bands which host a series of Chern insulators at zero magnetic field near a 'magic angle' around $1.23^\circ$. Using a locally applied electric field, we induce a topological quantum phase transition at one hole per moir\'e unit cell. Our work establishes the topological phase diagram of a generalized Kane-Mele-Hubbard model in tWSe$_2$, demonstrating a tunable platform for strongly correlated topological phases., Comment: This is the author's version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in Science 384 (doi below)

Moir\'e engineering in atomically thin van der Waals heterostructures creates artificial quantum materials with designer properties. We solve the many-body problem of interacting electrons confined to a moir\'e superlattice potential minimum (the moir\'e atom) using a 2D fermionic neural network. We show that strong Coulomb interactions in combination with the anisotropic moir\'e potential lead to striking ``Wigner molecule" charge density distributions observable with scanning tunneling microscopy.

Semiconductor moir\'e superlattices comprise an array of artificial atoms and provide a highly tunable platform for exploring novel electronic phases. We introduce a theoretical framework for studying moir\'e quantum matter that treats intra-moir\'e-atom interactions exactly and is controlled in the limit of large moir\'e period. We reveal an abundance of new physics arising from strong electron interactions when there are multiple electrons within a moir\'e unit cell. In particular, at filling factor $n=3$, the Coulomb interaction within each three-electron moir\'e atom leads to a three-lobed ``Wigner molecule''. When their size is comparable to the moir\'e period, the Wigner molecules form an emergent Kagome lattice. Our work identifies two universal length scales characterizing the kinetic and interaction energies in moir\'e materials and demonstrates a rich phase diagram due to their interplay., Comment: Accepted by PRL. main 5 pages, 4 figures; supplement 12 pages, 4 figures