Search

Abstract: A study of the contact resistance (R sd) in pentacene-based double-gate transistors is presented. In top-contact transistors, as the negative bias of the additional top-gate bias is increased, R sd decreases by over five orders of magnitude for small bottom-gate voltages. In bottom-contact transistors, R sd is reduced by about ten times for all bias values, implying improved charge transport in all operating regimes. The different tunability of R sd in top/bottom-contact transistors is attributed to different charge injection modulation by the coplanar/staggered top gate. Therefore, double-gate architecture offers a novel and effective approach to limit R sd and its relevant impacts on organic transistor. [Copyright &y& Elsevier]

Highlights: [•] Optimal contacts should have smallest size but possess minimum contact effects. [•] Six times of semiconductor film thickness is found to be optimal for contact length. [•] It increases in nanoscale channels with more hopping and anisotropic transport. [•] This optimal contact length is independent of semiconductors and variable mobility. [ABSTRACT FROM AUTHOR]