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Analyzes the deep levels in undoped bulk InP after rapid thermal annealing. Information on different insulating layers that form the MIS structures; Application of deep level transient spectroscopy in the study of the behavior of the rapid thermal annealed InP in metal-insulator-semiconductor (MIS) structures; Assessment of the effects of an insulating layer on interface states in the InP-MIS structure.

Discusses the metastable states of the EL2 family discovered from the measurement of photocapacitance quenching. Purpose of deep level transient spectroscopy; Illustration of the arsenic antisite model involved with the interstitial arsenic and the double vacancy.

The minority carrier (electron) capture process and the interface trap density of a TiN/Al[sub 2]O[sub 3]/p-Si metal-oxide-semiconductor capacitor were examined by deep level transient spectroscopy (DLTS). It was found that the activation energies of the large peaks detected at higher temperatures with gate bias voltages of 1.8, 1.5, 1.3, and 1.1 V were 0.19, 0.24, 0.29, and 0.37 eV, respectively. These energies were related to the electron-capture process from the conduction band by interface states in the upper half of the Si band gap. The interface state passivation effect of postannealing in a hydrogen ambient was studied from the minority carrier capture process and the usual DLTS signals. The D[sub it] at an energy of 0.35 eV from the valence bandedge decreased from 1 × 10[sup 12] cm[sup -2] eV[sup -1] at the as-fabricated state to 4 × 10[sup 11] cm[sup -2] eV[sup - 1] after H[sub 2] annealing at 450 °C. It was also found that the D[sub it] at an energy of 0.3 eV from the conduction bandedge decreased to the same amount by the same annealing process. [ABSTRACT FROM AUTHOR]