1. From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices.
- Author
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Mueller, Stefan, Muller, Johannes, Hoffmann, Raik, Yurchuk, Ekaterina, Schlosser, Till, Boschke, Roman, Paul, Jan, Goldbach, Matthias, Herrmann, Tom, Zaka, Alban, Schroder, Uwe, and Mikolajick, Thomas
- Subjects
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FERROELECTRIC devices , *CAPACITORS , *FERROELECTRIC materials , *DOPING agents (Chemistry) , *TRANSISTOR design & construction , *ELECTRIC properties of silicon , *EQUIPMENT & supplies - Abstract
Ferroelectric Si:HfO2 has been investigated starting from metal–ferroelectric–metal (MFM) capacitors over metal–ferroelectric–insulator–semiconductor (MFIS) and finally ferroelectric field-effect-transistor (FeFET) devices. Endurance characteristics and field cycling effects recognized for the material itself are shown to also translate to highly scaled 30-nm FeFET devices. Positive-up negative-down as well as pulsed Id{-}Vg measurements illustrate how ferroelectric material characteristics of MFM capacitors can also be identified in more complex MFIS and FeFET structures. Antiferroelectric-like characteristics observed for relatively high Si dopant concentration reveal significant trapping superimposed onto the ferroelectric memory window limiting the general program/erase endurance of the devices to 10^4 cycles. In addition, worst case disturb scenarios for a VDD/2 and VDD/3 scheme are evaluated to prove the viability of one-transistor memory cell concepts. The ability to tailor the ferroelectric properties by appropriate dopant concentration reveals disturb resilience up to 10^6 disturb cycles while maintaining an ION to IOFF ratio of more than four orders of magnitude. [ABSTRACT FROM PUBLISHER]
- Published
- 2013
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