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From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices.
- Source :
-
IEEE Transactions on Electron Devices . Dec2013, Vol. 60 Issue 12, p4199-4205. 7p. - Publication Year :
- 2013
-
Abstract
- Ferroelectric Si:HfO2 has been investigated starting from metal–ferroelectric–metal (MFM) capacitors over metal–ferroelectric–insulator–semiconductor (MFIS) and finally ferroelectric field-effect-transistor (FeFET) devices. Endurance characteristics and field cycling effects recognized for the material itself are shown to also translate to highly scaled 30-nm FeFET devices. Positive-up negative-down as well as pulsed Id{-}Vg measurements illustrate how ferroelectric material characteristics of MFM capacitors can also be identified in more complex MFIS and FeFET structures. Antiferroelectric-like characteristics observed for relatively high Si dopant concentration reveal significant trapping superimposed onto the ferroelectric memory window limiting the general program/erase endurance of the devices to 10^4 cycles. In addition, worst case disturb scenarios for a VDD/2 and VDD/3 scheme are evaluated to prove the viability of one-transistor memory cell concepts. The ability to tailor the ferroelectric properties by appropriate dopant concentration reveals disturb resilience up to 10^6 disturb cycles while maintaining an ION to IOFF ratio of more than four orders of magnitude. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 60
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 92520628
- Full Text :
- https://doi.org/10.1109/TED.2013.2283465