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Regarding advanced 5G mobile communication, microwave dielectric ceramics are considered as the most potential materials to develop new-generation base station resonators. Herein, ZnNb 2 O 6 ceramics with ε r of approximately 24 have been prepared using the solid-state reaction method, with tailored extra ZnO of x mol% (x = 1, 2 and 3). We have for the first time applied the P-V-L chemical bond theory to investigate ZnNb 2 O 6 ceramics with ZnO doping, by exploring the relationship of dielectric properties and chemical bond characteristics. Particularly, the Raman spectra demonstrates that the full width at half maximum of υ 1 (A g) vibration mode can exhibit significant correlation with the quality factor (Q × f). To further support the experimental study, we have also conducted the first-principle calculation of electron density difference via CASTEP package, which further confirms the change of temperature coefficient of resonance frequency (τ f). Our newly designed ZnNb 2 O 6 ceramics doped with 1 mol% ZnO exhibit excellent dielectric properties, i.e., ε r = 23.74, Q × f = 102,824 GHz and τ f = −55.38 ppm/°C, which demonstrates great potential to construct miniaturized 5G base station with advanced ceramic dielectrics. [ABSTRACT FROM AUTHOR]

Abstract Ca 0.66 Ti 0.66 Nd 0.34 Al 0.34 O 3 (CTNA) ceramics were prepared by solid-state reaction method and their sintering behavior, microwave dielectric properties, and microstructure were investigated. CTNA ceramics were examined by Raman scattering to reveal the correlation of perovskite structure with the microwave properties. It found that the area of peak A 1g (O) stretch mode reflects the quality factor Q × f value in the perovskite materials. This concludes that the oxygen octahedron plays an important role of the material's microwave performance. Sintering temperature affected the unit cell volume and the lattice parameters of the CTNA ceramics, the grain size distribution, the Gibbs free energy, the thermal expansion coefficient (CTE), and the dielectric properties (ε r , Q × f , τ f). The samples sintered at 1500 °C displayed the best dielectric constant and Q × f , as 44.94 and 41922.22 GHz, respectively. Highlights • The CTNA ceramics were sintered at different temperatures were investigated. • The thermal analysis detailed description of the stages of sintering process. • The unit cell volume is affected by the sintering temperature was confirmed by XRD. • Raman to reveal the correlation of structure with the microwave properties. • Relationship between grain size, Gibbs free energy, CTE, and dielectric properties. [ABSTRACT FROM AUTHOR]

The influence of BaO content (up to 15 mol%) on the crystallization behaviour, structure, thermal properties and microwave dielectric properties of the BaO-CaO-B 2 O 3 -SiO 2 glasses and glass-ceramics system was investigated. The glasses were produced by melting at 1400 °C and quenching into water, and the glass-ceramics were produced via heat treatment at temperatures between 750 and 800 °C. The results of X-ray diffraction analysis showed that increasing the BaO content raised the resistance of the glass against crystallization and favoured the transformation of β-CaSiO 3 and α-CaSiO 3 phases, which crystallized in the Ba-free and in low BaO content compositions, into SiO 2 and Ba 4 Si 6 O 16 , which crystallized in compositions with higher concentrations of BaO. The BaO content had little influence on the glass transition temperature ( T g ) and the linear coefficient of thermal expansion (CTE), but strongly reduced the softening point ( T s ). Even the addition of BaO as minor additives resulted in a dramatic reduction of the T s ; for example, the T s decreased from 902 °C for the Ba-free composition to 682 °C for the BaO-containing one (5%). Low values of the dielectric constant (5.9 ≤  ε r ≤ 6.63) and dielectric loss (1.12 × 10 −3 ≤ tan δ  ≤ 3.15 × 10 −3 ) were measured. [ABSTRACT FROM AUTHOR]

Perovskite ceramics with a formula of Ca 0.7 Ti 0.7 La 0.3 Al 0.3 O 3 (CTLA) were produced through a conventional solid-state reaction procedure following three different La 3+ -doping methods using powders of La 2 O 3 , or La 2 O 3 /Al 2 O 3 powder mixture, or LaAlO 3 . La 3+ doping favored grain growth and densification, affected the grain size distribution, and improved the dielectric properties of the produced sintered CTLA ceramics. The doping methods had a strong influence on these properties. More specifically, doping with La 2 O 3 and La 2 O 3 /Al 2 O 3 resulted in formation of solid solution, while a secondary phase formed in the CTLA ceramics doped with LaAlO 3 , which caused a coarsening of the microstructure and lowered the La 3+ doping effects on the dielectric properties. The experimental results suggest that La 3+ doping improves the dielectric properties of the sintered CTLA perovskite ceramics, which are further enhanced by doping with Al 3+ ions in small amounts. However, further increase of Al 3+ ions content jeopardizes them. [ABSTRACT FROM AUTHOR]

Abstract: Applications insulated metal substrates (IMS) for high-density and high-power mounting are greatly extending with miniaturizing of electronic components. Recently, aluminum nitride film has been used as a potential insulator and/or passivation material in insulated metal substrate because of its high intrinsic thermal conductivity, low thermal expansion coefficient, low dielectric constant and high electric resistivity. In this investigation, AlN films were deposited on Al substrates by radio frequency (RF) reactive magnetron sputtering. The metal-interfacial insulator layer-metal (Al/AlN/Al MIM) structures were obtained with AlN layer on Al substrates. Electrical properties of the MIM structures were investigated by meaning of C–V and C-f characteristics in the frequency range of 100Hz–500kHz and voltage range of −4 V to 4 V. Experimental results show that the dielectric constant of this structure decreases gradually with increasing frequency. While the dielectric loss tangent was tested from low frequency to high frequency, it is found that the dielectric loss tangent decreases from 0.03375, reaches a minimum (0.00424) at approximately 65kHz and then increases sharply. These results are in accordance with modified model of Goswami and Goswami for such structure. The dielectric dispersion is observed due to distribution of interface states as well as ionized space charge carriers such as the oxygen atoms, nitrogen vacancies and defects. The AC conductivity results show that the electrical resistance decreases as the frequency increasing due to hopping type conduction. [Copyright &y& Elsevier]

• Polymer-matrix composites. • 3-Dimensional reinforcement. • Thermal properties. • Syntactic foams. • Hollow glass microspheres. Electronic packaging materials with low dielectric constant (D k) and high thermal conductivity (TC) are of vital importance in mitigating signal delay and enhancing heat dissipation efficiency in modern electronics. However, low D k and high TC are difficult to complement each other, because high TC filler usually possesses a high D k. Herein, we have newly designed a composite material simultaneously with low D k and high TC through hollow glass microspheres (HGMs), boron nitride particles, epoxy resin and reticulated porous ceramic (RPC). The composite material prepared by sintering HGMs and RPC is more effective in improving TC while keeping low D k. Specifically, the D k of the newly designed composite is lower than 3.0 with a large TC of 0.96 W/m·K. This new epoxy-matrix composite with both low D k and high TC can shed new light on designing electronic packaging materials for advanced miniaturized electronics. [ABSTRACT FROM AUTHOR]