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1. Integrating high-k dielectrics: etched polysilicon or metal gates?

Author

Schram, Tom, Beckx, Stephan, De Gendt, Stefan, Vertommen, Johan, and Lee, Steve

Subjects
*DIELECTRICS, *SILICON, *ELECTRODES, *ELECTRIC capacity
Abstract

Assesses the compatibility of dielectric layers with conventional polysilicon gate electrodes. Use of standard processing equipment; Power capacity; Level of performance.

Published
2003

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