1. Admittance Characteristics of Au/p-Si Schottky Diode with Damage Induced by Reactive Ion Etching.
- Author
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Asai, Akira, Ohachi, Tadashi, and Taniguchi, Ichiro
- Subjects
- *
SILICON diodes , *DIODES , *SCHOTTKY barrier diodes , *SILICON , *ELECTRIC currents , *NUMERICAL analysis - Abstract
Reactive ion etching (RIE) is known to alter electrical characteristics by creating a damaged layer on the surface of the etched substance. An Au/p-Si Schottky diode was formed on a silicon surface which was etched by RE using CF4 gas. It was found that excess dc conductance and inductive susceptance were observed in the current voltage (I-V) and the admittance frequency (Y-f) characteristics under forward bias conditions, respectively. These results are expLained by assuming the existence of deep-level traps induced by RJE in the depletion region of the diode. Assuming a damage depth distribution of 10 nm, the experimental values of inductive susceptance are able to calculate by following parameters of the deep-level traps induced by RIE; Er Ev 0.33 (eV) and NT = 1 × 1019 (cm-3). [ABSTRACT FROM AUTHOR]
- Published
- 1993
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