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The features of electron-impurity polarizability in a quantum nanostructure are investigated from the knowledge of allowed electron states coupled to a shallow-donor impurity. The influence of geometry on the carrier confinement and the presence of external probes such as electric fields are explicitly considered. For the sake of illustration, the example of CdS/ZnSe-based prolate ellipsoidal core/shell quantum dot (PECSQD) configuration is chosen. This problem allows to consider a finite confinement potential model, employing both the finite element method and the effective mass approximation. Within this framework, impurity-related energies and associated polarizability for the lowest states were determined as functions of the shell thickness, core dimensions, impurity position, and applied electric field strength - while keeping the shell dimensions fixed. Electron-impurity energies are largely affected by electric field values. Under thinner shell conditions, polarizability shows variations with field strength that include "anomalous" negative values for certain states. Then, the increase in shell thickness causes a significant increment in the polarizabilities, regardless impurity position. • Electronic properties in prolate ellipsoidal core/shell quantum dots. • Effects of a shallow donor impurity. • Influence of externally applied electric field. • Calculation of electron-impurity polarizability for different allowed states. • Appearance of negative values of polarizability for certain excited states. [ABSTRACT FROM AUTHOR]

This work presents a theoretical analysis of a CdTe/CdS core/shell quantum dots embedded in a dielectric oxide matrix under the influence of hydrogenic impurity and the applied electric field intensity. The eigenstates and their corresponding eigenfunctions are computed by solving the Schrodinger equation using the finite element method within the effective mass approximation. The first-order linear and third-order nonlinear optical absorption coefficients as well as the refractive index changes are computed based on the compact density matrix approach. The obtained result shows that the first-order linear and third-order nonlinear optical properties are more pronounced with the electric field, surrounding oxide matrix and the donor impurity effects. However, the first-order linear and third-order nonlinear optical absorption coefficients and refractive index changes can experience a red or blue shift under the influence of electric field, oxide matrix and hydrogenic impurity. In addition, under all conditions, the height peaks of these optical properties can be raised (fall). Our findings demonstrate the critical importance of considering the roles of electric field, the presence of donor impurity, and the capped dielectric oxide matrix in the design and fabrication of core–shell-based optoelectronic devices. • The presence of the emergent TiO 2 oxide matrix (OM) significantly improves the peak values of the optical properties compared to other OM or isolated quantum dots. • The application of an external electric field affects the absorption coefficient differently depending on the nature of the transition. • The presence of a hydrogen-confined impurity causes a blue-shift of the peak absorption coefficient. [ABSTRACT FROM AUTHOR]