1. Structural and Electrical Studies on (Nd, V) Co-doped (Bi 0.9 Nd 0.1 )(Fe 0.975 V 0.025 )O 3+δ Thin Films.
- Author
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Kim, Y. J., Kim, J. W., Kim, H. J., Kim, M. H., Song, T. K., and Kim, S. S.
- Subjects
ELECTRIC properties of thin films ,CHEMICAL solution deposition ,CURRENT density (Electromagnetism) ,POLARIZATION (Electricity) ,ELECTRIC fields - Abstract
We prepared pure BiFeO3(BFO) and co-doped (Bi0.9Nd0.1)(Fe0.975V0.025)O3+δ(BNFVO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BNFVO thin film. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO, 2.6 × 10−7A/cm2at 100 kV/cm. The remnant polarization (2Pr) and the coercive electric field (2Ec) of the co-doped BNFVO thin film were 56 μC/cm2and 1393 kV/cm at an applied electric field of 1110 kV/cm and at a frequency of 1 kHz, and the values decreased with increasing measurement frequency to 18 μC/cm2and 1282 kV/cm at 10 kHz, respectively. We also confirmed that the remnant polarization (2Pr) and the coercive electric field (2Ec) were fairly saturated above a measurement frequency of 20 kHz for the BNFVO thin film. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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