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SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]

Bi thin films were grown on (111)-oriented 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single-crystal substrates by pulsed laser deposition. Resistance of Bi/PMN–PT could be modulated by asymmetrical bipolar electric field in a reversible and nonvolatile manner at 300 K. By tuning asymmetrical bipolar electric field, different nonvolatile strain states could be generated in PMN–PT and transferred to Bi thin film, which leads to different nonvolatile resistance states. Furthermore, different resistance states of the Bi films could be achieved under different magnetic field at 300 K. The ferroelastic strain- and magnetic-field-modulated resistive properties in Bi/PMN–PT suggest a promising approach for multistate resistive memories. [ABSTRACT FROM AUTHOR]

Electric-field switchable multilevel nonvolatile resistance states are achieved at room temperature in Bi0.93Sb0.07/0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3(111) (PMN-0.29PT) heterostructures. During the initial poling of the PMN-0.29PT, the variation of the resistance of the Bi0.93Sb0.07 film with the electric field tracks the variation of the electric-field-induced in-plane strain of the PMN-0.29PT effectively, revealing that the resistance switching is dominated by the ferroelectric-domain-switching-induced lattice strain but not the domain-switching-induced polarization charges. A relative resistance change ΔR/R ∼ 7% at 300 K and up to ∼10% at 180 K were achieved near the coercive field EC of the PMN-0.29PT(111) substrate. At least five stable resistance states with good endurance properties could be obtained at room temperature by precisely controlling the electric-field pulse sequence as a result of the nonvolatile remnant strain transferring from the PMN-0.29PT to the film, providing a simple and energy efficient way to construct multistate resistive memory. [ABSTRACT FROM AUTHOR]

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]

• In situ reversible tuning of resistance is achieved in LaMnO 3 /PMN-PT(0 1 1) structure. • Non-180° domain switching-induced strain causes nonvolatile resistance tuning. • In-plane tensile stain contributes to the weakened magnetization. The electric-field control of resistance change (Δ R / R) and magnetic properties has been investigated in the LaMnO 3 (LMO)/0.71Pb(Mg 1/3 Nb 2/3)O 3 -0.29PbTiO 3 (PMN-PT)(0 1 1) heterostructure. When the unipolar electric field (E) increases beyond the coercive field of PMN-PT, the Δ R / R vs E curve transforms from a loop-like behavior to a butterfly-like one. The electric-field-induced non-linear strain effect in the PMN-PT substrate realizes the modulation between low and high resistance states at room temperature. Moreover, different freezing temperatures of the LMO film are observed as the PMN-PT substrate is in the fully negative (P r -) and partially positive (P r / / ) polarization states. The observation of less magnetization for P r / / state than that for P r - state indicates that the in-plane tensile strain is beneficial to the Jahn-Teller distortion. [ABSTRACT FROM AUTHOR]