1. An Insightful Assessment of 1T-DRAM With Misaligned Polarity Gate in RFET.
- Author
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Roy, Arghya Singha, Semwal, Sandeep, and Kranti, Abhinav
- Subjects
DYNAMIC random access memory ,FIELD-effect transistors ,RF values (Chromatography) ,RANDOM access memory - Abstract
The operation of a capacitorless (1T) dynamic random access memory (DRAM) can be compromised if the storage region is located near metal–semiconductor junction in a reconfigurable field-effect transistor (RFET). Through subtle modifications, without affecting current drive, capacitance, and reconfigurable features, the present work showcases feasible 1T-DRAM operation in a RFET with an intentionally misaligned polarity gate. Analysis based on device physics and operation, highlights 1T-DRAM for standalone and embedded applications with impressive performance indicators: sense margin $\ge 6~\mu \text{A}/\mu \text{m}$ , retention time ≥16 ms (for embedded), and ≥64 ms (for standalone) at 85 °C, current ratio of ~104 along with a low write (~ 1 ns) and read (~ 2 ns) time. Guidelines in terms of scalability of total length and biases for implementing 1T-DRAM cell are presented. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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