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24 results on '"Wong, H.-S. Philip"'

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1. Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi₂Te₃ Thermoelectric Interfacial Layer.

2. A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory.

3. Scaling the CBRAM Switching Layer Diameter to 30 nm Improves Cycling Endurance.

4. 1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays.

5. Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays.

6. Recent progress of resistive switching random access memory (RRAM).

7. Resistive switching random access memory — Materials, device, interconnects, and scaling considerations.

8. Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory.

9. Metal–Oxide RRAM.

10. An Ultra-Low Reset Current Cross-Point Phase Change Memory With Carbon Nanotube Electrodes.

11. On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy.

12. On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology.

13. Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer.

14. Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon.

15. Fabrication and Characterization of Nanoscale NiO Resistance Change Memory (RRAM) Cells With Confined Conduction Paths.

16. Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM).

17. All-Metal-Nitride RRAM Devices.

18. The Role of Ti Capping Layer in HfOx-Based RRAM Devices.

19. Nanometer-Scale HfOx RRAM.

20. A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM.

21. \Al2\O3-Based RRAM Using Atomic Layer Deposition (ALD) With 1-\mu\A RESET Current.

22. First demonstration of RRAM patterned by block copolymer self-assembly.

23. Monolithic three-dimensional integration of carbon nanotube FET complementary logic circuits.

24. Monitoring Oxygen Movementby Raman Spectroscopy ofResistive Random Access Memory with a Graphene-Inserted Electrode.

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