1. Design of Ga2O3 modulation doped field effect transistors.
- Author
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Mastro, Michael A., Tadjer, Marko J., Kim, Jihyun, Ren, Fan, and Pearton, Stephen J.
- Subjects
FIELD-effect transistors ,ELECTRON mobility ,TRANSISTORS ,THERMAL conductivity - Abstract
The design of β-Ga
2 O3 -based modulation-doped field effect transistors is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of the electron mobility as well as temperature- and orientation-dependent approximations of the thermal conductivity of β-Ga2 O3 are presented. A decrease in drain current was attributed to a position-dependent mobility reduction caused by a coupled self-heating mechanism and a high electric-field mobility reduction mechanism. A simple thermal management solution is presented where heat is extracted through the source contact metal. Additionally, it is shown that an undesired secondary channel can form at the modulation-doped layer that is distinguished by an inflection in the transconductance curve. [ABSTRACT FROM AUTHOR]- Published
- 2021
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