Search

Coherent manipulation of electron spins is one of the central challenges of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow 10–60 GHz radio frequency (RF) pulses to induce an electromagnetic field that drives Rabi oscillations in a quantum dot interface. The frequency of these Rabi oscillations is directly proportional to the strength of the induced electromagnetic field. We outline a methodology for the design of a printed circuit board and an ESR line that is able to transmit an RF pulse in the 40 GHz regime and induce an oscillating magnetic field onto a qubit device. We propose and implement a novel design by coupling a second symmetrical Oersted line in the opposing direction of the first to act as an antenna for the purpose of monitoring power and magnetic field strength at the embedded device interface. [ABSTRACT FROM AUTHOR]

P+ monolayers in Si are of great scientific and technological interest, both intrinsically as a material in the "ideal vacuum" of crystalline Si and because they are showing great promise as qubits of electron and nuclear spin. The GHz complex conductivity σ(ω) can allow one to elucidate basic physical properties and is also important for fast devices, but measuring σ(ω) in 2D materials has not been easy. We report on such measurements, including showing (i) qualitatively a lack of any resonances up to 5 GHz (indicating no energy splittings below about 0.02 meV); and (ii) the quantitatively ideal Drude behavior of this novel material up to 5 GHz, showing a lower bound on the scattering rate of about 2 × 1010 s−1. We also discuss deconvolving the confounding effect of the distributed resistance and capacitance of the monolayer. [ABSTRACT FROM AUTHOR]