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Spin caloric transport refers to the coupling of heat with spin transport. Its applications primarily concern the generation of spin currents and control of magnetisation by temperature gradients for information technology, known by the synonym spin caloritronics. Within the framework of ab initio theory, new tools are being developed to provide an additional understanding of these phenomena in realistic materials, accounting for the complexity of the electronic structure without adjustable parameters. Here, we review this progress, summarising the principles of the density-functional-based approaches in the field and presenting a number of application highlights. Our discussion includes the three most frequently employed approaches to the problem, namely the Kubo, Boltzmann, and Landauer-Büttiker methods. These are showcased in specific examples that span, on the one hand, a wide range of materials, such as bulk metallic alloys, nano-structured metallic and tunnel junctions, or magnetic overlayers on heavy metals, and, on the other hand, a wide range of effects, such as the spin-Seebeck, magneto-Seebeck, and spin-Nernst effects, spin disorder, and the thermal spin-transfer and thermal spin-orbit torques.

The search for new large band gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is critical for their realistic applications at room temperature. Here we predict, based on first principles calculations, that the band gap of QSH and QAH states can be as large as 1.01 eV and 0.35 eV in an H-decorated Bi(111) film. The origin of this giant band gap lies both in the large spin-orbit interaction of Bi and the H-mediated exceptional electronic and structural properties. Moreover, we find that the QAH state also possesses the properties of quantum valley Hall state, thus intrinsically realising the so-called valley-polarized QAH effect. We further investigate the realization of large gap QSH and QAH states in an H-decorated Bi(\={1}10) film and X-decorated (X=F, Cl, Br, and I) Bi(111) films., submitted to Physical Reveiw Letters on 25th of September 2014

Different from the two-dimensional (2D) topological insulator, the 2D topological crystalline insulator (TCI) phase disappears when the mirror symmetry is broken, e.g., upon placing on a substrate. Here, based on a new family of 2D TCIs - SnTe and PbTe monolayers - we theoretically predict the realization of the quantum anomalous Hall effect with Chern number C = 2 even when the mirror symmetry is broken. Remarkably, we also demonstrate that the considered materials retain their large-gap topological properties in quantum well structures obtained by sandwiching the monolayers between NaCl layers. Our results demonstrate that the TCIs can serve as a seed for observing robust topologically non-trivial phases., 5 pages, submitted on 27th Feb 2015

We present a density functional theory (DFT) investigation of magnetically frustrated Mn monolayers deposited on the triangular lattice of the Cu(1 1 1) surface. Noncollinear magnetic structures are treated on the basis of the vector spin-density formulation of the DFT. The spin-polarized scanning tunneling microscope operated in the constant-current mode is proposed as a powerful tool to investigate these complex magnetic structures.

At ferroelectric longitudinal domain walls there is an uncompensated charge, which could form a two-dimensional electron gas in the insulator. However, the uncompensated charges can be accommodated by, e.g., defects or localized states that split off from the conduction band. We carried out density functional theory calculations to study these scenarios in PbTiO3 with and without consideration of strong correlation effects simulated via inclusion of a Hubbard parameter U. The optimized structure and electronic structure depend on the choice of this parameter: For vanishing U, a broad, conducting domain wall is obtained, while increasing U leads to localized Ti 3d states and an insulating, sharp domain wall. We also investigated the effects of varying the ferroelectric polarization on the electronic structure of these domain walls.

The fundamental aspects of spin-dependent transport processes and their interplay with temperature gradients, as given by the spin Seebeck coefficient, are still largely unexplored and a multitude of contributing factors must be considered. We used density functional theory together with a Monte-Carlo-based statistical method to simulate simple nanostructures, such as Co nanowires and films embedded in a Cu host or in vacuum, and investigated the influence of spin-disorder scattering on electron transport at elevated temperatures. While we show that the spin-dependent scattering of electrons due to temperature induced disorder of the local magnetic moments contributes significantly to the resistance, thermoelectric and spin-caloric transport coefficients, we also conclude that the actual magnitude of these effects cannot be predicted, quantitatively or qualitatively, without such detailed calculations., 10 pages, 6 figures

We examined by two-dimensional photoemission band mapping the electronic structure of Au films epitaxially grown on an Ag(111) substrate. The very similar structural and electronic properties of the two metals make this system extremely unfavorable for the occurrence and observation of electron confinement effects. At variance with previous spectroscopic studies, we show that the electron reflectivity at the interface sustains the formation of well-defined $sp$-derived quantum well states (QWS) and weak quantum well resonance states (QWRS) in the Au layers. The character and degree of confinement of these states are analyzed and quantitatively related to the Au/Ag interface reflectivity on the basis of density functional theory (DFT) band structure calculations.

Electronic tunneling through ferroelectric insulators is considered to be a key ingredient of future oxide electronics. We investigate the role of the electronic band structure of the decaying electronic states in the band gap by first discussing the expected behavior of tunneling in the effective mass model. We demonstrate that, even for the simple prototype ferroelectric oxides in the perovskite structures PbTiO${}_{3}$ and BaTiO${}_{3}$, the basic assumption of the effective mass model is not appropriate, and that the correct interpretation of tunneling in these materials requires a material-specific description of the evanescent states as provided by the complex band structure.

We monitored the $sp$-quantum-well states of Ag films on Pt(111) by angle-resolved photoemission in order to examine the electron transmission across the Ag/Pt interface. For thin layers up to 3.5 nm, the Ag states are characterized by broad quasiparticle peaks and a reversal of the parabolic curvature near the center of the surface Brillouin zone. Remarkable departures from the expected nearly-free-electronlike band dispersion persist in films of more than 14 nm thickness. First-principles calculations and symmetry analysis demonstrate that the observed anomalies in the spectroscopic data can be straightforwardly linked to variations in the Ag/Pt transmission coefficient in the energy-momentum space.

We report on the implementation of the Wannier Functions (WFs) formalism within the full-potential linearized augmented plane wave method (FLAPW), suitable for bulk, film and one-dimensional geometries. The details of the implementation, as well as results for the metallic SrVO3, ferroelectric BaTiO3 grown on SrTiO3, covalently bonded graphene and a one-dimensional Pt-chain are given. We discuss the effect of spin-orbit coupling on the Wannier Functions for the cases of SrVO3 and platinum. The dependency of the WFs on the choice of the localized trial orbitals as well as the difference between the maximally localized and "first-guess" WFs are discussed. Our results on SrVO3 and BaTiO3, e.g. the ferroelectric polarization of BaTiO3, are compared to results published elsewhere and found to be in excellent agreement., 13 pages, 9 figures, accepted for publication in Phys. Rev. B

By combining the first-principles concept based on the density functional theory with a model vacuum potential, we calculate image potential states and analogous ones in the presence of an electric field applied on a nonmagnetic Ag(100) surface and a magnetic Fe(110) surface. Our investigations are based on the Green-function embedding technique, which allows us to treat a truly semi-infinite surface and whence yields a continuum of bulk states. This turns out to be of crucial importance in order to investigate the qualitative difference between localized image or field states located in a band gap of the substrate and states in resonance with bulk states present at the same energies. This difference leads to remarkable changes in the binding energy versus field dispersion of the states. Furthermore, we show that in the case of the Fe(110) surface, the calculated magnetic exchange splitting increases with the electric field and is also modified by the transition from field states to surface resonance states.

By combining first-principles calculations with transport theory we investigate the origin of the magnetoresistance of a magnetic tunnel junction consisting of a ferromagnetic and an antiferromagnetic lead. The (001) oriented Fe/vacuum/Cr planar junction serves as model junction. Even though the conduction electrons of antiferromagnetic Cr are spin-degenerate, it is possible to observe magnetoresistance due to two mechanisms: Firstly, the surface magnetism of Cr creates a spin-dependent potential barrier, and secondly, exchange-split surface states and resonances result in a tunneling conductance which depends on the relative orientation of the Fe and Cr magnetizations. Spin-dependent tunneling between a ferromagnet and an antiferromagnet happens frequently in tunneling setups such as in spin-polarized scanning tunneling microscopy or magnetic tunnel junctions for magnetic random access memory.

The influence of local Coulomb correlations on the surface electronic structure of ${\mathrm{SrVO}}_{3}$, a strongly-correlated metal in a perovskite structure, is investigated for both the $\mathrm{SrO}$-layer and ${\mathrm{VO}}_{2}$-layer-terminated (001) surfaces. The electronic structure within the local density approximation of a semi-infinite surface is determined using the embedded Green-function approach, and the resultant density of states projected on the V ${t}_{2g}$ orbitals is used as an input to a subsequent many-body calculation within the dynamical mean field theory (DMFT) and the multiorbital quantum Monte Carlo technique. Qualitatively, the present study confirms the conclusion of recent photoemission experiments and tight-binding DMFT calculations which both indicate that the electronic structure at the surface is more strongly correlated than in the bulk. On a quantitative level significant differences are obtained as a function of orbital polarization at the surface, surface layer relaxation, and $\mathrm{SrO}$ vs ${\mathrm{VO}}_{2}$ surface termination.

Results are presented of a first-principles calculation of the spin-polarized field emission from ferromagnetic Ni(111) and Ni(001) surfaces. The electronic structure of both surfaces exposed to an external field is determined by combining the surface-embedded Green function approach and the full-potential linearized augmented plane-wave (FLAPW) method within the local spin density approximation. We discuss the contributions of different states to the field-emission current. In particular, we show that delocalized states make similar contributions to that obtained at jellium surfaces while localized Ni d states contribute mostly through surface states and resonances. These contributions dominate in the minority spin and lead to a negative spin polarization of the emitted current.