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A study was conducted to examine the quasi-ballistic hole transport in nanoscale pMOSFETs using new self-consistent multi-subband Monte Carlo (MSMC) simulator. Findings reveal that ballistic ratios in pMOS are not much worse than in nMOS transistors.

The article studies a new negative bias temperature instability (NBTI) model based on hole trapping and thermally activated relaxation. Findings highlight that the new model is used for physics-based reliability prediction of NBTI effects as a function of time, temperature and stress regime.

A microscopic analysis of the fundamental effects related to quantum-well (QW) injection pumping is presented. The barrier-state populations have compensated the QW charging and the replenishing of stimulated carrier recombination under CW laser operation has caused persistent charge oscillations at the plasma frequency.

A novel ridge structure with antiguiding cladding layers is proposed for horizontal transverse modes and lasing characteristics are analyzed in order to suppress lasing in higher order transverse modes and improve kink levels in ridge-type 980-nm fiber pump semiconductor lasers. The ridge structure, kink levels are improved by suppressing spatial hole burning and lowering optical gains for higher order transverse modes, with an increase in the step d of the antiguiding cladding layers, which are located at both sides of a mesa.

Several stress and recovery experiments are conducted to explain the mechanisms that are shown to initiate the negative bias temperature instability (NBTI) in the pMOS transistors. Generation of defects near the silicon/silicon dioxide interface and hole trapping in the oxide are shown to be the two main mechanisms imvolved in the generation of NBTI.

A phenomenological method is used for isolating the hole-trapping and interface trap generation components during negative bias temperature instability (NBTI) stress in plasma nitrided oxide (PNO) p-MOSFETs. The robustness and uniqueness of the separation procedure of the isolation technique is demonstrated by degradation data obtained from a wide range of operating conditions and a wide variety of PNO processes.

A planar-gate HiGT with an n-type hole-barrier layer surrounding a p-Layer is described where the hole-barrier prevents the holes from flowing into the p-layer and stores them in the n-layer. It is seen that the planar HiGT provides a better tradeoff between collector-emitter saturation voltage turn-off loss than conventional IGBTs.

The hole mobility enhancement for 35-nm gate length pMOSFETs with strained channel induced by Ge preamorphization implantation (PAI) for source/drain (S/D) extension is examined. The findings suggest an improvement of 43 percent of hole effective mobility at 1.1-MV.cm vertical effective field

The k.p bandstructure program is used to measure the full band structure of [110] uniaxially stressed Si, with tensile and compressive stress ranging from 50 MPa to 2GPa in order to study the response of hole mobility and thermal velocity for short channel devices. The results have shown that the increase in both thermal velocity and mobility with compressive stress have continued up to approximately the 4-GPa limit of the simulations where each finally appears near saturation.