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Your search keyword '"顾书林"' showing total 2 results
Start Over Author "顾书林" Topic epitaxy
2 results on '"顾书林"'

1. 切割角蓝宝石基氧化镓薄膜 MOCVD 外延及 日盲紫外光电探测器制备.

Author

汪正鹏, 张崇德, 孙新雨, 胡天澄, 崔　梅, 张贻俊, 巩贺贺, 任芳芳, 顾书林, 张　荣, and 叶建东

Subjects
METAL organic chemical vapor deposition, SAPPHIRES, THIN films, SURFACE roughness, CRYSTAL surfaces, PHOTODETECTORS
Abstract

Copyright of Journal of Synthetic Crystals is the property of Journal of Synthetic Crystals Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2023

2. Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor

Author

郑有炓 Zheng You-dou, 顾然 Gu Ran, 朱顺明 Zhu Shun-ming, 叶建东 Ye Jian-dong, 顾书林 Gu Shu-lin, 朱振邦 Zhu Zhen-bang, and 黄时敏 Huang Shi-min

Subjects
Radiation, Fabrication, Materials science, business.industry, Transconductance, Transistor, Heterojunction, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, law.invention, law, Optoelectronics, Field-effect transistor, Metalorganic vapour phase epitaxy, Photolithography, business
Abstract

The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor(HFET) were reported in this paper.The HFET was grown on α-plane sapphire substrate by metal-organic vapor phase epitaxy(MOVPE) technology,and was fabricated by a conventional photolithography technique combined with wet etching.The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS·mm-1 and mobility of 182 cm2·V-1·s-1 at room temperature.The property was limited by leakage current through the SiO2 gate insulator.At low temperature,the performance was improved due to the reduced leakage current.

Published
2012

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