1. Carbon-doped GaAs single junction solar microcells grown in multilayer epitaxial assemblies.
- Author
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Kang, Dongseok, Arab, Shermin, Cronin, Stephen B., Li, Xiuling, Rogers, John A., and Yoon, Jongseung
- Subjects
- *
CARBON , *GALLIUM arsenide , *DOPING agents (Chemistry) , *PERFORMANCE of photovoltaic cells , *EPITAXY - Abstract
A stack design for carbon-doped GaAs single junction solar microcells grown in triple-layer epitaxial assemblies is presented. As-grown materials exhibit improved uniformity of photovoltaic performance compared to zinc-doped systems due to the lack of mobile dopants while a slight degradation exists in middle and bottom devices. Detailed electrical and optical characterizations of devices together with systematic studies of acceptor reactivation reveal carbon-related defects accompanied by carrier compensation, and associated scattering and recombination centers are primarily responsible for the degraded contact properties and photovoltaic performance, resulting from prolonged thermal treatments of early-grown materials during the multilayer epitaxial growth. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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