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Your search keyword '"Mitrofanov, M. I."' showing total 8 results
Start Over Author "Mitrofanov, M. I." Topic epitaxy
8 results on '"Mitrofanov, M. I."'

3. Quantum-Cascade Laser with Radiation Emission through a Textured Layer

Author

Babichev, A. V., Kolodeznyi, E. S., Gladyshev, A.G., Denisov, D. V., Voznyuk, G. V., Mitrofanov, M. I., Mikhailov, D. A., Chistyakov, D. V., Kuritsyn, D. I., Dudelev, V. V., Slipchenko, S. O., Lyutetskii, A. V., Evtikhiev, V. P., Karachinsky, L. Ya., Novikov, I. I., Morozov, S. V., Sokolovskii, G. S., Pikhtin, N. A., and Egorov, A. Yu.

Published
2022
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4. Surface Emitting Quantum-Cascade Ring Laser

Author

Babichev, A. V., Kolodeznyi, E. S., Gladyshev, A. G., Denisov, D. V., Voznyuk, G. V., Mitrofanov, M. I., Kharin, N. Yu., Panevin, V. Yu., Slipchenko, S. O., Lyutetskii, A. V., Evtikhiev, V. P., Karachinsky, L. Ya., Novikov, I. I., Pikhtin, N. A., and Egorov, A. Yu.

Published
2021
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6. Selective Epitaxial Growth of III-N Structures Using Ion-Beam Nanolithography.

Author

Lundin, W. V., Tsatsulnikov, A. F., Rodin, S. N., Sakharov, A. V., Usov, S. O., Mitrofanov, M. I., Levitskii, I. V., and Evtikhiev, V. P.

Subjects
NANOLITHOGRAPHY, ION beams, EPITAXY, GALLIUM nitride, METAL organic chemical vapor deposition
Abstract

Abstract: The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si3N4 layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy duration should be 5-10 s, which impairs the reproducibility of the parameters of the epitaxial process. It is also shown that the mechanism of the selective growth of submicrometer objects differs significantly from that for planar layers and selectively grown layers with dimensions of ~1 μm or greater. The effect of precursor (trimethylgallium and ammonia) fluxes on the character of selective epitaxy is examined. To investigate the possibilities of varying mask topology for fabricating model objects with regard to photonic crystals, the impact of the shape and orientation of the windows in the Si3N4 mask on the character of selective epitaxy is studied. [ABSTRACT FROM AUTHOR]

Published
2018
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7. FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy.

Author

Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Tatarinov, E. E., Rodin, S. N., Lundin, W. V., Evtikhiev, V. P., and Mizerov, M.N.

Subjects
*ION beam lithography, *SILICON nitride, *GALLIUM nitride, *FOCUSED ion beams, *EPITAXY, *CHEMICAL templates
Abstract

Abstract: Our study describes FIB technological aspects of preparing mask for GaN selective area epitaxy on Si3N4/GaN template. [ABSTRACT FROM AUTHOR]

Published
2018
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8. Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching.

Author

Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Tatarinov, E. E., Rodin, S. N., Kaliteevski, M. A., and Evtikhiev, V. P.

Subjects
*GALLIUM nitride, *CRYSTAL structure, *NANOPHOTONICS, *EPITAXY, *FOCUSED ion beam etching
Abstract

In the Si3N4 layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in windows produced with a focused ion beam. It is found that coaxial hexagonal structures are formed during the growth process in ring-shaped mask windows. [ABSTRACT FROM AUTHOR]

Published
2018
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