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Thin films of Nd3+/Zr4+ cosubstituted Bi4Ti3O12 (BIT), i.e., Bi3.15Nd0.85Ti2.8Zr0.2O12 (BNTZ), were fabricated on Pt/Ti/SiO2/Si(100) substrates by chemical solution deposition and annealed at different temperatures of 600, 650, 700, and 800 °C. The effects of annealing temperature on the microstructure, leakage current, ferroelectric, and dielectric properties of the BNTZ films were investigated in detail. Significantly, compared with the Bi3.15Nd0.85Ti3O12 film, the BNTZ thin film has a lower coercive field (2Ec) and leakage current density and a slightly larger remnant polarization (2Pr). It shows that Nd3+/Zr4+ cosubstitution in BIT film might be an effective way to improve ferroelectric properties of BIT. [ABSTRACT FROM AUTHOR]

Thin films of Nd and Mn cosubstituted bismuth titanate, i.e., Bi3.15Nd0.85(Ti3-xMnx)O12 (BNTM) (x=0, 0.005, 0.01, 0.03, 0.05, and 0.1), were fabricated on Pt/Ti/SiO2/Si(100) substrates at 700 °C by a chemical solution deposition technique. The structures of the films were analyzed using x-ray diffraction and Raman spectroscopy. These films possessed preferred (117) and (00l)-oriented polycrystalline structures. The ferroelectric properties of BNTM films were systematically investigated as a function of the Mn content. It is found that a low concentration substitution with manganese ions in Bi3.15Nd0.85Ti3O12 greatly enhances the remnant polarization (2Pr) and reduces the coercive field (2Ec) of the film. The 2Pr and 2Ec are 78 μC/cm2 and 205 kV/cm, respectively. No fatigue phenomenon is also observed for the BNTM film with x=0.01 up to 1.5×1010 switching cycles. [ABSTRACT FROM AUTHOR]