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The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets. [ABSTRACT FROM AUTHOR]

The rich internal degrees of freedom of magnetic domain walls make them an attractive complement to electron charge for exploring new concepts of storage, transport and processing of information. Here we use the tunable internal structure of a domain wall in a perpendicularly magnetized GaMnAsP/GaAs ferromagnetic semiconductor and demonstrate devices in which piezoelectrically controlled magnetic anisotropy yields up to 500% mobility variations for an electrical-current-driven domain wall. We observe current-induced domain wall motion over a wide range of current-pulse amplitudes and report a direct observation and the piezoelectric control of the Walker breakdown separating two regimes with different mobilities. Our work demonstrates that in spin-orbit-coupled ferromagnets with weak extrinsic domain wall pinning, the piezoelectric control allows one to experimentally assess the upper and lower boundaries of the characteristic ratio of adiabatic and non-adiabatic spin-transfer torques in the current-driven domain wall motion. [ABSTRACT FROM AUTHOR]

Electrical and optical control of magnetization are of central importance in the research and applications of spintronics. Non-relativistic angular momentum transfer or relativistic spin-orbit coupling provide efficient means by which electrical current driven through a ferromagnet can exert a torque on the magnetization. Ferromagnetic semiconductors like (Ga,Mn)As are suitable model systems with which to search for optical counterparts of these phenomena, where photocarriers excited by a laser pulse exert torque upon magnetization. Here, we report the observation of an optical spin-orbit torque (OSOT) in (Ga,Mn)As. The phenomenon originates from spin-orbit coupling of non-equilibrium photocarriers excitated by helicity-independent pump laser pulses, which do not impart angular momentum. In our measurements of the time-dependent magnetization trajectories, the signatures of OSOT are clearly distinct from the competing thermal excitation mechanism, and OSOT can even dominate in (Ga,Mn)As materials with appropriately controlled micromagnetic parameters. [ABSTRACT FROM AUTHOR]

The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical excitations of magnetic systems by laser pulses have been a separate research field the aim of which is to explore magnetization dynamics at short timescales and enable ultrafast spintronic devices. We report the experimental observation of the optical spin transfer torque, predicted theoretically several years ago, building the bridge between these two fields of spintronics research. In a pump-and-probe optical experiment we measure coherent spin precession in a (Ga, Mn)As ferromagnetic semiconductor excited by circularly polarized laser pulses. During the pump pulse, the spin angular momentum of photo-carriers generated by the absorbed light is transferred to the collective magnetization of the ferromagnet. We analyse quantitatively the observed magnetization dynamics triggered by the optical spin transfer torque using independently determined micromagnetic parameters and magneto-optical coefficients of the studied (Ga, Mn)As. [ABSTRACT FROM AUTHOR]

We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experimental method utilizes different polarization dependences of the polar Kerr effect and magnetic linear dichroism to disentangle the pump-induced out-of-plane and in-plane motions of magnetization, respectively. We demonstrate that the method is sensitive enough to allow for the determination of small angle excitations of the magnetization in GaMnAs. The method is readily applicable to other magnetic materials with sufficiently strong circular and linear magneto-optical effects. [ABSTRACT FROM AUTHOR]

A spin valve is a microelectronic device in which high- and low-resistance states are realized by using both the charge and spin of carriers. Spin-valve structures used in modern hard-drive read heads and magnetic random access memoriescomprise two ferromagnetic electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunnelling magnetoresistance effect. Here we demonstrate more than 100% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet on one side and a non-magnetic metal on the other side of the tunnel barrier. Ferromagneticmoments in NiFe are reversed by external fields of approximately50 mT or less, and the exchange-spring effect of NiFe on IrMn induces rotation of antiferromagnetic moments in IrMn, which is detected by the measured tunnelling anisotropic magnetoresistance. Our work demonstrates a spintronic element whose transport characteristics are governed by an antiferromagnet. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit-coupling-induced magnetotransport anisotropy using a single magnetic electrode. The antiferromagnetic tunnelling anisotropic magnetoresistance provides a means to study magnetic characteristics of antiferromagnetic films by an electronic-transport measurement. [ABSTRACT FROM AUTHOR]

Electrical detection of spin-polarized transport in semiconductors is one of the key prerequisites for successful incorporation of spin in semiconductor microelectronics. The present schemes are based on spin-dependent transport effects within the spin generation region in the semiconductor, or on non-local detection outside the spin-injection area using a ferromagnet attached to the semiconductor. Here, we report that polarized injection of carriers can be detected by transverse electrical signals directly along the semiconducting channel, both inside and outside the injection area, without disturbing the spin-polarized current or using magnetic elements. Our planar p–n diode microdevices enable us to demonstrate Hall effect symmetries and large magnitudes of the measured effect. Supported by microscopic calculations, we infer that the observed spin-injection Hall effect reflects spin dynamics induced by an internal spin–orbit field and is closely related to the anomalous and spin Hall effects. The spin-injection Hall effect is observed up to high temperatures and our devices represent a realization of a non-magnetic spin-photovoltaic polarimeter that directly converts polarization of light into transverse voltage signals. [ABSTRACT FROM AUTHOR]

Rapid developments in material research of metallic ferromagnetic (III,Mn)V semiconductors over the past few years have brought a much better understanding of these complex materials. We review here some of the main developments and current understanding of the bulk properties of these systems within the metallic regime, focusing principally on the magneto-transport and magneto-optical properties. Although several theoretical approaches are reviewed, the bulk of the review uses the effective Hamiltonian approach, which has proven useful in describing many of these properties namely in (Ga,Mn)As and (In,Mn)As. The model assumes a ferromagnetic coupling between Mn d-shell local moments mediated by holes in the semiconductor valence band. [ABSTRACT FROM AUTHOR]

The close analogy between two-dimensional electron system states and conventional itinerant ferromagnets is used to analyze ordered many-body states in the integer quantum Hall regime. The possibility of in situ tuning between easy-plane and easy-axis quantum Hall ferromagnets is discussed for biased bilayer systems with total filling factor ν=3. Recent experiments on Ising quantum Hall systems are explained in terms of their unique domain wall physics. Issues including Ising critical temperatures, hysteresis loops and transport anisotropies are addressed using a combination of the self-consistent field technique, Hartree–Fock/RPA approximation, and exact diagonalization of the many-body Hamiltonian. [Copyright &y& Elsevier]

We report single-color, time-resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession by applying two successive ultrashort laser pulses. The magnetic field and temperature dependent experiments reveal the collective Mn-moment nature of the oscillatory part of the time-dependent Kerr rotation, as well as contributions to the magneto-optical signal that are not connected with the magnetization dynamics. [ABSTRACT FROM AUTHOR]

We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn[sup 2+] acceptors with a local moment S=5/2 and from nonmagnetic compensating defects. In metallic samples Boltzmann transport theory with golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The level of the chemical potential is a fundamental parameter of the electronic structure of a physical system, which consequently plays an important role in defining the properties of active electrical devices. We directly measure the chemical potential shift in the relativistic band structure of the ferromagnetic semiconductor (Ga,Mn)As, controlled by changes in its magnetic order parameter. Our device comprises a non-magnetic aluminum single electron channel capacitively coupled to the (Ga,Mn)As gate electrode. The chemical potential shifts of the gate are directly read out from the shifts in the Coulomb blockade oscillations of the single electron transistor. The experiments introduce a concept of spin gating electrical current. In our spin transistor spin manipulation is completely removed from the electrical current carrying channel. [ABSTRACT FROM AUTHOR]

We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study, we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac current in a NiFe/IrMn bilayer. At room temperature, we observe antidampinglike spin torque acting on the NiFe ferromagnet, generated by an in-plane current driven through the IrMn antiferromagnet. A large enhancement of the torque, characterized by an effective spin-Hall angle exceeding most heavy transition metals, correlates with the presence of the exchange-bias field at the NiFe/IrMn interface. It highlights that, in addition to the strong spin-orbit coupling, the antiferromagnetic order in IrMn governs the observed phenomenon. [ABSTRACT FROM AUTHOR]

First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead nonrelativistic spin transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin torques requiring no reference ferromagnet. Here we report the observation of a counterpart magnetoresistance effect in such a relativistic system which allows us to electrically detect the sign of the magnetization without an auxiliary magnetic field or ferromagnet. We observe the effect in a geometry in which the magnetization of a uniaxial (Ga,Mn)As epilayer is set either parallel or antiparallel to a current-induced nonequilibrium spin polarization of carriers. In our structure, this linear-in-current magnetoresistance reaches 0.2% at current density of 106Acm-2. [ABSTRACT FROM AUTHOR]

Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using the Kuboformula. In addition to the current-driven fieldlike torque TFL=τFLm×uso (uso being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-damping-like torque of the form TDL=τDLm×(uso×m). Analytical expressions are obtained in the model case of a magnetic Rashba two-dimensional electron gas, while numerical calculations have been performed on a dilute magnetic semiconductor (Ga,Mn)As modeled by the Kohn-Luttinger Hamiltonian exchange coupled to the Mn moments. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described. [ABSTRACT FROM AUTHOR]

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intraband and to the intrinsic interband spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we consider bulk Mn2Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modeled by a Rashba spin-orbit coupling. We propose an antiferromagnetic memory device with electrical writing and reading. [ABSTRACT FROM AUTHOR]

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data, we determined the magnetic anisotropy fields, the spin stiffness, and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular-to-plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We also show that the apparent magnetization precession damping is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode. [ABSTRACT FROM AUTHOR]

We theoretically investigate the tunneling anisotropic magneto-Seebeck effect in a realistically modeled CoPt/MgO/Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt/MgO/CoPt as well. We find that the magneto-Seebeck ratio of CoPt/MgO/Pt exceeds that of CoPt/MgO/CoPt for small barrier widths, reaching 175% at room temperature. This provides a sharp contrast to the magnetoresistance, in which CoPt/MgO/CoPt performs better by one order of magnitude for all barrier widths. Thus, by switching from twoferromagnetic layers to one (so that spin-orbit coupling alone governs the magnetic transport anisotropy), the magnetoresistance ratio diminishes while the magneto-Seebeck ratio remains comparable or improves considerably. We therefore demonstrate that magnetic tunability can increase when caused solely by spin-orbit coupling. This result sheds light on the role that spin-orbit coupling plays in magnetically tuning the properties of tunnel junctions. [ABSTRACT FROM AUTHOR]

We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band. [ABSTRACT FROM AUTHOR]

We report on high-resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present in the (111) and (111) planes and absent in the (111) and (111) planes. They occupy 102%-10-1% of the ferromagnetic epilayer volume while no stacking faults are detected in the controlled, undoped GaAs epilayer. Full-potential density functional calculations provide additional evidence that the formation of the stacking faults is promoted by Mn attracted to these structural defects. The enhanced Mn density along the common [110] direction of the stacking fault planes produces a symmetry-breaking mechanism of a strength and sense that can account for the uniaxial [110]/[110] magnetocrystalline anisotropy of these ferromagnetic semiconductors. [ABSTRACT FROM AUTHOR]

One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný et al., Phys. Rev. Lett. 113, 157201 (2014)], the electrical switching of magnetic moments in an antiferromagnet was demonstrated [P. Wadley et al., Science 351, 587 (2016)]. The switching is due to the so-called spin-orbit torque, which has been extensively studied in ferromagnets. In this phenomena a nonequilibrium spin-polarization exchange coupled to the ordered local moments is induced by current, hence exerting a torque on the order parameter. Here we give a general systematic analysis of the symmetry of the spin-orbit torque in locally and globally noncentrosymmetric crystals. We study when the symmetry allows for a nonzero torque, when is the torque effective, and its dependence on the applied current direction and orientation of magnetic moments. For comparison, we consider both antiferromagnetic and ferromagnetic orders. In two representative model crystals we perform microscopic calculations of the spin-orbit torque to illustrate its symmetry properties and to highlight conditions under which the spin-orbit torque can be efficient for manipulating antiferromagnetic moments. [ABSTRACT FROM AUTHOR]