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Your search keyword '"Tian, Y.F."' showing total 2 results
Start Over Author "Tian, Y.F." Topic ferromagnetism -- analysis
2 results on '"Tian, Y.F."'

1. Controllable spin-polarized electrical transport in wide-band-gap oxide ferromagnetic semiconductors

Author

Tian, Y.F., Shi-shen Yan, Zhao, M.W., Dai, Y.Y., Zhang, Y.P., Qiao, R.M., Hu, S.J., Chen, Y.X., Liu, G.L., Mei, L.M., Qiang, Y., and Jiao, J.

Subjects
Electron transport -- Analysis, Ferromagnetism -- Analysis, Spin coupling -- Analysis, Transition metals -- Electric properties, Transition metals -- Magnetic properties, Physics
Abstract

The preparation of a family of wide-band-gap ternary oxide ferromagnetic semiconductor films with high transition metal concentration is presented. The wide gap oxide ferromagnetic semiconductors with controllable spin-polarized electrical transport could find significant application in spintronics devices as a spin injection source.

Published
2010

2. Tunable rectification and giant positive magnetoresistance in [Ge.sub.1-x][Mn.sub.x]/Ge epitaxial heterojunction diodes

Author

Tian, Y.F., Deng, J.X., Yan, S.S., Dai, Y.Y., Zhao, M.W., Chen, Y.X., Liu, G.L., Mei, L.M., Liu, Z.Y., and Sun, J.R.

Subjects
Ferromagnetism -- Analysis, Germanium -- Electric properties, Germanium -- Magnetic properties, Magnetic fields -- Analysis, Magnetoresistance -- Measurement, Manganese -- Electric properties, Manganese -- Magnetic properties, Molecular beams -- Usage, Physics
Abstract

[Ge.sub.1-x][Mn.sub.x]/Ge single-crystal heterojunction diodes with p-type [Ge.sub.1-x][Mn.sub.x] ferromagnetic semiconductor are grown on Ge substrates of p-type, n-type and intrinsic semiconductors by using molecular beam epitaxy. The I-V curve of the p-[Ge.sub.0.95][Mn.sub.0.05]/intrinsic-Ge diode is tuned by a magnetic field, which is shown by a large positive magnetoresistance.

Published
2010

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