10 results on '"Ebrahimi, Behzad"'
Search Results
2. A single-ended low leakage and low voltage 10T SRAM cell with high yield
3. A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology
4. A 1‐GHz GC‐eDRAM in 7‐nm FinFET with static retention time at 700 mV for ultra‐low power on‐chip memory applications.
5. Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs.
6. Robust FinFET SRAM design based on dynamic back-gate voltage adjustment.
7. Low power and robust 8T/10T subthreshold SRAM cells.
8. Low-power and robust SRAM cells based on asymmetric FinFET structures.
9. Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage.
10. A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.