1. Cross-sectional atom probe tomography sample preparation for improved analysis of fins on SOI.
- Author
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Martin, Andrew J., Weng, Weihao, Zhu, Zhengmao, Loesing, Rainer, Shaffer, James, and Katnani, Ahmad
- Subjects
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ATOM-probe tomography , *ENERGY dispersive X-ray spectroscopy , *EVAPORATION (Chemistry) , *DRYING , *EVAPORATIVE cooling - Abstract
Sample preparation for atom probe tomography of 3D semiconductor devices has proven to significantly affect field evaporation and the reliability of reconstructed data. A cross-sectional preparation method is applied to state-of-the-art Si finFET technology on SOI. This preparation approach advantageously provides a conductive path for voltage and heat, offers analysis of many fins within a single tip, and improves resolution across interfaces of particular interest. Measured B and Ge profiles exhibit good correlation with SIMS and EDX and show no signs of B clustering or pile-up near the Si/SiGe interface of the fin. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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