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Presents a study that investigated the deep levels and electrical properties in silicon and beryllium-coimplanted semi-insulating gallium arsenide. Experimental procedures; Results; Discussion.

Details a study which investigated the passivation and dissociation process of hydrogen-silicon donor complex in plasma-hydrogenated gallium arsenide. Temperature dependent values of dissociation frequencies; Results of the electric field annealing experiment; Dissociation kinetics of the hydrogen-donor complex.

Presents annealing and hydrogenation behaviors for EL2 and EL6 as dominant deep levels in gallium arsenide. Significance of deep levels in semiconductors; Direct relation between EL2 and EL6 in their origin; Behavior of the deep levels with annealing times.

Focuses on a study which investigated the deep electron traps in gallium arsenide layers grown on (100) silicon substrates by metalorganic chemical vapor deposition. Difference between gallium arsenide on silicon substrates and gallium arsenide substrates; Description of the experiment; Result and discussion.

The effect of hydrogen plasma exposure on the deep levels in GaAs grown by the horizontal Bridgman method was studied. After hydrogenation at 250 °C for 3 h, the concentrations of the electron deep levels, such as the EL2 trap (Ec-0.81 eV), the EL3 trap (Ec-0.63 eV), and the EL6 trap (Ec-0.35 eV), decrease by one order of magnitude. On the other hand, three new electron traps at Ec -0.42 eV, Ec -0.54 eV, and Ec -0.94 eV are created. After rapid thermal annealing up to 550 °C for 10 s, these created traps are reduced and the deep levels decreased by hydrogenation recover nearly completely. This result reveals that the passivation and creation of deep levels by hydrogenation may be explained as the interaction of atomic hydrogen with an unsaturated bond of native defects. [ABSTRACT FROM AUTHOR]