11 results on '"Ando, Yuto"'
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2. The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer.
3. Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes.
4. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg.
5. Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature.
6. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE.
7. <italic>m</italic>‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle <italic>m</italic>‐Plane GaN Substrates.
8. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate.
9. Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness.
10. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE.
11. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate.
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