1. Effect of Si doping on near-infrared emission and energy transfer of Bismuth in silicate glasses
- Author
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Dai, Nengli, Luan, Huaixun, Xu, Bing, Yang, Lvyun, Sheng, Yubang, Liu, Zijun, and Li, Jinyan
- Subjects
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GLASS , *SILICATES , *ENERGY transfer , *BISMUTH , *INFRARED radiation , *RARE earth ions , *LUMINESCENCE , *ELECTRONIC excitation - Abstract
Abstract: We have studied the effects of Si doping on the near infrared (NIR) luminescence observed in low Bi doped ( 0.1mol% ) glasses and the energy transfer from Yb3+ to Bi. The broadband near infrared can only be observed when Si is introduced in the Bi-doped glass. The origin of this fluorescence can be attributed to Bi ions at low valence. Efficient energy transfer from Yb3+ to Bi NIR active ions is achieved by co-doping of Si. There is an increment of about ~29 times of the emission intensity from Bi-related active center as the Yb3+ concentration varies from 0 to 2.0mol% and the amount of Si is 0.05mol% under 980nm excitation. The possible mechanism of energy transfer from Yb3+ to Bi is also discussed. [Copyright &y& Elsevier]
- Published
- 2012
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