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Achieving low resistance contacts to graphene is a common concern for graphene device performance and hybrid graphene/metal interconnects. In this work, we have used the circular Transfer Length Method (cTLM) to electrically characterize Ag, Au, Ni, Ti, and Pd as contact metals to graphene. The consistency of the obtained results was verified with the characterization of up to 72 cTLM structures per metal. Within our study, the noble metals Au, Ag and Pd, which form a weaker bond with graphene, are shown to result in lower contact resistance (Rc) values compared to the more reactive Ni and Ti. X-ray Photo Electron Spectroscopy and Transmission Electron Microscopy characterization for the latter have shown the formation of Ti and Ni carbides. Graphene/Pd contacts show a distinct intermediate behavior. The weak carbide formation signature and the low Rc values measured agree with theoretical predictions of an intermediate state of weak chemisorption of Pd on graphene. [ABSTRACT FROM AUTHOR]

In this work, we evaluate the material properties of graphene and assess the potential application of graphene to replace copper wires in Back-End-Of-Line (BEOL) interconnects. Based on circuit and system-level simulations, high restrictions are imposed to graphene with respect to contact resistance and mean free path. Experimentally we evaluate single and multi-layer graphene wires and we measure carrier mean free paths (MFPs) above ~ 110 nm. However, contact engineering will be the key issue for integration of graphene as interconnect. [ABSTRACT FROM AUTHOR]