1. Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices.
- Author
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Yamaguchi, Shimpei, Bayindir, Zeynel, He, Xiaoli, Uppal, Suresh, Srinivasan, Purushothaman, Yong, Chloe, Choi, Dongil, Joshi, Manoj, Yang, Hyuck Soo, Hu, Owen, Samavedam, Srikanth, and Sohn, D.K.
- Subjects
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HEAT resistant alloys , *ANNEALING of metals , *INTEGRATED circuit passivation , *ELECTRON work function , *TITANIUM nitride - Abstract
In this work, we investigated the effect of so-called WF (Work Function) setting anneal (high temperature annealing on TiN/HfO 2 stack) on gate stack properties. It was found that intermixed layer created in-between TiN and HfO 2 during WF setting anneal has negative fixed charge and reduces pFET V t (positive V t shift). In addition, higher anneal temperature further reduces pFET V t while keeping nFET V t almost unchanged. This could be explained by passivation of oxygen vacancies in HfO 2 with diffused oxygen from TiN layer. By combining these effects, one can further push effective work function towards valence band edge which enables wider coverage of transistor V t option. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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