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Details a study which described how to incorporate the effects of photoexcitable deep donors into a one-dimensional calculation of the band structure of a unipolar heterostructure in steady illumination. Salient features obtained for three levels of illumination; Effect of absorption coefficient on electron distribution; Dependence of electron distribution on illumination.

Presents information on a study which discussed several features of the direct current properties of illuminated, n-type gallium (Ga) arsenide/aluminum[subx] Ga[sub1-x]arsenide heterostructures that normally are neglected when modeling the parallel conduction. Description of the sample preparation; Calculation outline; Discussion on temperature-dependent parameters.

Heterostructure p-n junction tunnel diodes with high peak to valley ratios (12: 1) at room temperature are demonstrated. The variation of peak and valley currents in diodes with different tunnel barriers is described, and the mechanisms responsible for the valley current and its temperature dependence are proposed. Ways to improve the peak to valley ratio and reduce junction capacitance are discussed. [ABSTRACT FROM AUTHOR]