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Cross‐sectional submicronic Laue diffraction has been successfully applied to HgCdTe/CdZnTe heterostructures to provide accurate strain profiles from substrate to surface. Combined with chemical‐sensitive techniques, this approach allows correlation of lattice‐mismatch, interface compositional gradient and strain while isolating specific layer contributions which would otherwise be averaged using conventional X‐ray diffraction. The submicronic spatial resolution allowed by the synchrotron white beam size is particularly suited to complex infrared detector designed structures such as dual‐color detectors. The extreme strain resolution of 10−5 required for the very low lattice‐mismatch system HgCdTe/CdZnTe is demonstrated. [ABSTRACT FROM AUTHOR]

Presents a study which examined implantation-enhanced interdiffusion of CdTe-ZnTe strained heterostructures using photoluminescence channeling, transmission electron microscopy and secondary-ion-mass spectrometry. Details on studies of implantation-enhanced interdiffusion of semiconductor interfaces; Experimental conditions and samples; Implantation in bulk materials and heterostructures.

Plastic relaxation of the misfit stress in core-shell semi-conducting nanowires can lead to structural defects, detrimental to applications. Core-shell Zn0.7Mg0.3O/ZnO quantum well heterostructures were deposited on ZnO nanowires. Strain along the a and c axes of the wurtzite structure is relaxed through the glide of dislocation half-loops from the free surfaces, within pyramidal and prismatic planes. Some half-loops are closed up in the barriers to accommodate the misfit at two consecutive interfaces of the quantum well stack. Dislocations are also observed within the nanowire core: contrary to two-dimensional structures, both the core and the shell can be plastically relaxed. [ABSTRACT FROM AUTHOR]