1. High Pressure Raman Study of Layered Semiconductor Tlgase2.
- Author
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Aliyeva, V.B., Mammadov, T.G., Mammadov, A.I., Babayev, S.S., Pashayeva, E.G., Jabarov, S.H., Kichanov, S.E., Dubrovinsky, L.S., and Dang, N.T.
- Subjects
RAMAN spectroscopy ,PHASE transitions ,GRUNEISEN constant ,MOLECULAR crystals ,CHALCOGENIDES - Abstract
Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe
2 were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe2 . The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe2 . It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe2 is similar [ABSTRACT FROM AUTHOR]- Published
- 2018
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