1. Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures
- Author
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Tsai, Jung-Hui, Hsu, I-Hsuan, Li, Chien-Ming, Su, Ning-Xing, Wu, Yi-Zhen, and Huang, Yin-Shan
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TRANSISTORS , *MINING engineering , *CATHODE rays , *PARTICLES (Nuclear physics) - Abstract
Abstract: The characteristics of InGaP/GaAs heterostructure-emitter bipolar transistors (HEBTs) including conventional GaAs bulk base, InGaAs/GaAs superlattice-base, and InGaAs quantum-well base structures are presented and compared by two-dimensional simulation analysis. Among of the devices, the superlattice-base device exhibits a highest collector current, a highest current gain and a lowest base–emitter turn-on voltage attributed to the increased charge storage of minority carriers in the InGaAs/GaAs superlattice-base region by tunneling behavior. The relatively low turn-on voltage can reduce the operating voltage and collector–emitter offset voltage for low power consumption in circuit applications. However, as to the quantum-well base device, the electrons injecting into the InGaAs well are blocked by the p+-GaAs bulk base and it causes a great quantity of electron storage within the small energy-gap n-type GaAs emitter layer, which significantly increases the base recombination current as well as degrades the collector current and current gain. [Copyright &y& Elsevier]
- Published
- 2008
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