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Highlights: [•] Serious warpage of IGBT power module is induced from assembly processes. [•] A pre-bending substrate with a curve opposite the warp is proposed. [•] Design is validated by FEA and related actual measurements. [•] Increasing DBC thickness of Al2O3 layer reduces warps and bonded solder stresses. [•] A thicker base plate is suggested to reduce warping of the entire packaging structure. [ABSTRACT FROM AUTHOR]

A high-power packaging device composed of 600 V/450 A insulated gate bipolar transistor (IGBT) module is presented. Thermal dissipation is improved, and the temperature of junction declines after Ag paste sintering is applied instead of conventional soldering. A 100 μm-thick sintered Ag preform is utilized to assemble two IGBTs and two diodes on Al 2 O 3 direct bonded copper (DBC) substrate during reflow in a vacuum oven. Three DBCs are attached on a copper baseplate to construct a power module. After a thermal cycling test is conducted for up to 2000 cycles, the die shear strength of the sintered Ag is as high as 24.8 MPa. Lowering the induced stress to fracture failure by using finite element simulation is carefully suggested. Furthermore, the measured thermal resistance is reduced by approximately 22%, and the noise during the electrical performance is eliminated by using Ag sintering. This research reveals the successful application of Ag paste sintering in 600 V/450 A IGBT module. • A 600 V/450 A insulated gate bipolar transistor module is presented. • Thermal and electrical properties of silver paste sintering are measured. • Die shear strength of the sintered Ag is as high as 24.8 MPa is acquired. • Scaling diode and preform thicknesses has a good advantage in releasing thermal stress. • Lowering fracture failure is suggested using finite element simulation. [ABSTRACT FROM AUTHOR]