1. The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology
- Author
-
A. A. Blokhin, Innokenty I. Novikov, D. V. Denisov, A. V. Babichev, M. A. Bobrov, Nikolai A. Maleev, S. S. Rochas, S. A. Blokhin, A. G. Kuzmenkov, L. Ya. Karachinsky, A. P. Vasil’ev, K. O. Voropaev, A. Yu. Egorov, V. M. Ustinov, A. S. Ionov, and A. G. Gladyshev
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Physics::Optics ,Saturable absorption ,Optical power ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,law.invention ,Vertical-cavity surface-emitting laser ,Tunnel junction ,law ,0103 physical sciences ,Optoelectronics ,Wafer ,0210 nano-technology ,business ,Lasing threshold ,Molecular beam epitaxy - Abstract
An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a height difference of 15 nm. The devices are obtained by wafer fusion of heterostructures grown by molecular beam epitaxy and provide single-mode lasing at a BTJ diameter of up to 8 μm. A decrease in the BTJ size leads to a sharp increase in the threshold current, the output optical power, and the resonance frequency at the lasing threshold. Stable single-mode lasing takes place due to the smoothed boundary of the buried surface relief, which induces a gradual change in the profile of the effective refractive index in the lateral direction with the effective current confinement retained. This makes it possible to reduce significantly the transverse optical confinement factor for the higher-order modes even at a large BTJ size. However, at a small BTJ size, it leads to the formation of a saturable absorber in unpumped parts of the active region.
- Published
- 2020