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InAlGaN-based laser diodes (LDs) can be designed to emit across a wide range of wavelengths spanning UV to green. A common challenge across all wavelengths lies in the difficulty in producing low resistance p-type InAlGaN layers. For shorter wavelength devices, the requirement of high aluminium containing p-AlGaN leads to high device series resistance. For the longer wavelength devices approaching the green wavelengths, the thermal degradation of the indium-rich quantum wells during the growth of the p-GaN and p-AlGaN cladding layers reduces the device efficiency. In this paper we discuss how BluGlass’s remote plasma chemical vapour deposition (RPCVD) technology can address these challenges through improvements to intrinsic material properties as well as enabling novel design architectures.

Progress in the design of field effect transistor on hetero-structure GaN/InxGa1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunnel injection of electrons or holes through hetero-junction. The vertical GaN/InxGa1-xN hetero-structure is prepared to have both thickness ~50 ?m and high specific resistance. The horizontal FET structure is prepared in order to achieve 1 ?m gate length and 17 ?m gate width. The technological methods used in the preparation of the FET structure are described. The static current-voltage characteristics are determined. It is found that there is gate threshold voltage that varies in range 2.1 ? 2.4 V for n-channel MOS and in range ?3.3 ? ?3.4 V for p-channel MOS. Also it is found that the drain current varies in the range ~ 7 ?A if the drain voltage is 5 V and the operational point is chosen to be 3.5 V of the gate voltage. Both parameters the dynamic channel resistance and the amplification factor are determined as well.