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Photocatalytic optical fibers are promising for the degradation of gaseous and volatile pollutants in air due to their high specific surface area, high light utilization efficiency, easy regeneration, and sustainability. In particular, photocatalytic optical fibers have proven highly useful for the removal and conversion of different kinds of air pollutants in air. However, these fibers suffer from low photocatalytic degradation efficiencies. In this review, we have focused on introducing photocatalytic quartz optical fibers and photocatalytic plastic optical fibers for the degradation and transformation of gas-phase air pollutants. The principle of photocatalytic optical fibers and main methods for improving their photocatalytic and light utilization efficiencies based on semiconductor photocatalytic coatings are summarized. Moreover, the Langmuir-Hinshelwood kinetic rate equation was summarized to analyze the photocatalytic reduction of gaseous pollutants. Finally, an outlook on the future of photocatalytic optical fibers toward the removal and conversion of gaseous air pollutants is discussed.

Owing to the unique electromagnetic response ability, artificial electromagnetic metasurfaces have potential applications in medical, imaging, sensing, and other fields. In this paper, a novel composite THz metasurface integrated by carbon nanotubes (CNTs) resonant metasurface and silicon microfluidic channel has been proposed, which combines the advantages of semiconductor and carbon nanotubes film materials. The absorption characteristics and the refractive index sensing capabilities are investigated comprehensively. Calculation results show that two obvious resonant absorption peaks located at 1.20 THz and 1.85 THz and the absorption is nearly 99.6% and 89.8%, respectively; the device performs a good linear relationship between the position of resonant absorption peaks and the refractive index, and the frequency sensitivity can achieve 492 GHz/RIU. The influence of structural parameters and the offset of the center of the CNTs metasurface on the absorption spectrum demonstrate that the novel composite metasurface has a good reliability and stability and can be used for sensing various materials in other frequency regions range from radio frequency through THz and to the infrared regime. This novel composite metasurface has good biocompatibility and low cost, which widens the application range of terahertz functional devices.

SiC metal-oxide semiconductor field-effect transistors (MOSFETs) and SiC/Si cascode devices are two popular normally-off SiC power devices. In terms of the rated voltage and current of a single chip, there are always some SiC/Si cascode counterparts for the SiC MOSFETs.Thus, the two devices can substitute for each other in many fields. However, it is not clear which of the two SiC power devices is more suitable for parallel operation to deal with high current. This paper comparatively investigates the paralleling suitability of SiC MOSFETs and SiC/Si cascode devices by theoretical analysis and experimental verifications for the first time. The paralleling suitability of the two devices is quantitatively evaluated bythe unbalanced current among paralleled chips under the conditions with asymmetric layout and uneven junction temperature. Both static and dynamic imbalanced current are taken into consideration. Based on the theoretical and experimental results, some design guidelines are proposed to promote current sharing.

The investigation of two-dimensional (2D) materials has advanced into practical device applications, such as cascaded logic stages. However, incompatible electrical properties and inappropriate logic levels remain enormous challenges. In this work, a doping-free strategy is investigated by top gated (TG) MoS2 field-effect transistors (FETs) using various metal gates (Au, Cu, Ag, and Al). These metals with different work functions provide a convenient tuning knob for controlling threshold voltage (Vth) for MoS2 FETs. For instance, the Al electrode can create an extra electron doping (n-doping) behavior in the MoS2 TG-FETs due to a dipole effect at the gate-dielectric interface. In this work, by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit, we successfully demonstrate wafer-scale MoS2 inverter arrays with an optimized inverter switching threshold voltage (VM) of 1.5 V and a DC voltage gain of 27 at a supply voltage (VDD) of 3 V. This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS2 film.

Semiconductor gas sensors are important candidates with small size, low power consumption, and low cost characteristics for gas sensing in the internet of things, but the nonlinear response, unstable baseline, and the variability of the responses towards temperature and humidity fluctuation harm its performance. Here, we proposed a new technique called virtual alternating current (AC) measurements to enable semiconductor gas sensors to achieve high linear response (R2 > 0.99), stable baseline, and easily calibrated temperature and humidity fluctuation. The most outstanding advantage of our technique is to achieve excellent performance simply by measuring resistance. The universality and feasibility of our technique were verified by a range of commercial and homemade sensing elements and a range of analyte. We also successfully generalized our technique to non-Debye relaxation systems, which further expands the scope of semiconductor gas sensor types available in our technique. We believe that our technique will enable gas sensing nodes built with semiconductor gas sensors in the internet of things to achieve markedly superior performance.

Numerous approaches have been used to modify graphitic carbon nitride (g-C3N4) for improving its photocatalytic activity. In this study, we demonstrated a facial post-calcination method for modified graphitic carbon nitride (g-C3N4-Ar/Air) to direct tuning band structure, i.e., bandgap and positions of conduction band (CB)/valence band (VB), through the control of atmospheric condition without involving any additional elements or metals or semiconductors. The synthesized g-C3N4-Ar/Air could efficiently degrade sulfamethazine (SMT) under simulated solar light, i.e., 99.0% removal of SMT with rate constant k1 = 2.696 h−1 within 1.5 h (4.9 times than pristine g-C3N4). Material characterizations indicated that the damaged/partial-collapsed structure and decreased nanosheet-interlayer distance for g-C3N4-Ar/Air resulted in the shift of band structure due to the denser stacking of pristine g-C3N4 through oxidative exfoliation and planarization by air calcination. In addition, the bandgap of g-C3N4-Ar/Air was slightly shrunk from 2.82 eV (pristine g-C3N4) to 2.79 eV, and the CB was significantly upshifted from -0.44 eV (pristine g-C3N4) to -0.81 eV, suggesting the powerful ability for donating the electrons for O2 to form •O2−. Fukui index (f –) based on theoretical calculation indicated that the sites of SMT molecule with high values, i.e., N9, C4 and C6, preferred to be attacked by •O2− and •OH, which is confirmed by the intermediates’ analysis. The tuning method for graphitic carbon nitride provides a simple approach to regulate the charge carrier lifetime then facilitate the utilization efficiency of solar light, which exhibits great potential in efficient removal of emerging organic contaminants from wastewater.

Rapid heat loss and fast charge carrier recombination constitute two crucial issues that hinder the development of efficient solar energy utilization and conversion over the semiconductor in a photothermal catalytic system. Inspired by energy production from waste water, we designed an advanced 3D C@TiO2 multishell nanoframe (MNF) photocatalyst. Its unique structural features of heat confinement and vibrant photocarrier kinetics lead to excellent photo-thermal conversion for synchronous superior photocatalytic H2 evolution (503 μmol g-1 h-1) and 98.2% RhB removal without the use of any co-catalyst and sacrificial reagent under simulated sunlight irradiation (AM 1.5G). Mechanism exploration reveals that the difference between the inner and outer gas pressure formed inside C@TiO2 precursor facilitates the selective cleavage of outer TiO2 layers at selected temperatures during calcination. Synergistic effects between residual carbon core and multi-shelled TiO2 framework endow C@TiO2 MNF with excellent heat confinement and vibrant photocarrier kinetics. Such MNF photo-thermocatalyst concept provides a novel strategy for effective utilization of solar energy, and this work may open a novel avenue towards advanced nanostructures for efficient waste-to-energy conversion.

Faster charge transport, excellent charge separation, narrow bandgap energy, lower electron-hole pair recombination rate, and high visible light absorption are the key features of an ideal photocatalyst material. Undoubtedly, semiconductor-based photocatalysts having remarkable charge separation efficiency have attracted considerable attention for degrading hazardous organic pollutants from contaminated water. So herein, a novel composite of reduced graphene oxide (rGO) supported by gadolinium doped bismuth yttrium oxide (Gd-BiYO3/rGO) was prepared by simple precipitation and ultrasonication method. The photocatalytic efficiency of the Gd-BiYO3/rGO composite was examined comparatively with pure BiYO3 and Gd-BiYO3 samples to degrade Methylene Blue (MB) dye under visible light irradiation. The Gd doping and rGO incorporation into BiYO3 increased the conductivity, improved the charge transfer efficiency, and impeded the charge recombination, resulting in superior photocatalytic activity of Gd-BiYO3/rGO. The kinetic studies exhibited the 96.2%, 61.5%, and 48.3% degradation of MB after 80 min irradiation of 1 SUN visible light under Gd-BiYO3/rGO, Gd-BiYO3, and BiYO3, respectively. The Gd-BiYO3/rGO composite degraded the MB dye at a rate (k = 0.0328 min-1) that is 5.05 and 2.68-fold higher than pure BiYO3 and Gd-BiYO3, correspondingly. The transient photocurrent response of Gd-BiYO3/rGO was comparatively 4.7 and 2.8 times greater than that of BiYO3 and Gd-BiYO3 photocatalysts, respectively. The dominant photocatalytic performance of Gd-BiYO3/rGO is primarily ascribed to the formation of heterojunctions between rGO nanosheets and Gd-BiYO3, which facilitate higher visible light absorbance, effective charge separation, and transfer through interfacial layers, more dye adsorption, lower charge transfer resistance, and hamper electron-hole pair recombination. Overall, the electrochemical results suggest that the current study provides an effective way to synthesize a heterostructure photocatalyst for removing organic pollutants from industrial effluents.

Hybrid dc circuit breakers (HCBs) are recognized as suitable devices for protecting high-voltage direct-current (HVDC) systems, along with other dc circuit breakers (DCCB). However, compared to mechanical circuit breakers, HCBs exhibit higher conduction losses. Such losses are inevitable under no-fault conditions as current may flow through some of the semiconductor switches. An integrated circuit breaker (ICB) minimizing these losses is presented in this paper, and this is achieved by replacing semiconductor switches by mechanical components in the current path. For completeness, the topology design, operating sequence and a mathematical analysis for component sizing of the device are provided. In addition, an estimation of the conduction losses is quantified. It is estimated that the power losses of an ICB are 2 to 30% of an HCB only. The ICB has been implemented in PSCAD/EMTDC to demonstrate its effectiveness for isolating dc faults, with simulations conducted on a three-terminal HVDC grid.

A multitude gratings design consists of gratings with different pitches ranging from the micrometre down to sub 40 nm scale combined with sub 10 nm step heights modulating the surface morphology for length scale measurements is proposed. The surface morphology modulation was performed using electron beam lithography incorporating a standard semiconductor processing technology. The critical dimension, edge roughness, step heights and line morphology in dependence on the grating pitch is studied.

Issues of amorphous oxide semiconductors (AOSs) thin-film transistors (TFTs) mainly focus on improving electrical performance and stability. Currently, the hump, the abnormal transfer characteristic, is also an essential factor of AOSs TFT. The hump phenomenon was observed for AOS-TFTs with a metal capping (MC) layer under various measurement conditions. The mobility in the MC TFT was improved from 14.8 cm2/Vs to 19.2 cm2/Vs compared to that of the conventional TFTs. The improved electrical characteristics in the MC structure are representative of the carrier injection effect and the change of the current path. This reason reveals that the MC structure has a hump phenomenon under the low drain to source voltage ( $V_{DS}$ ). The hump characteristic does not significantly affect the overall MC TFT characteristics (transfer characteristic, improved electrical characteristics through MC structure, etc.). In addition, it was confirmed that it exhibits very stable hump characteristics through repeated measurements and uniformity. It was found that two current paths are formed mainly due to carrier injection from the metal capping layer in the hump phenomenon observed at low $V_{DS}$ . These divided current paths can lead to two on-currents ( $I_{on}$ ) in the transfer curve. Many studies have recently been conducted to fabricate semiconductor devices with multi-values such as 0, 1, and 2. This divided current path could propose a simple method to achieve multi-values with an easy process.

In recent years, utilization technologies, such as photoelectrochemical reduction of CO2, have become promising for the sustainable production of fuels and chemicals. Green and clean products can also be obtained from CO2 molecule in a catalytic reaction using a suitable photoelectrocatalyst. This research identified the potential of a reduced graphene oxide-copper oxide/Cu foil (rGO-CuO/Cu) photoelectrode to produce methanol and examined the product using gas chromatography coupled with flame ionization detection. Results of experimental measurements showed that the rGO-CuO/Cu photoelectrode in 3 hours of hydrothermal reaction exhibited an excellent photoelectrochemical performance by generating a photocurrent density of 9.6 mA cm−2 at -0.8 V vs. Ag/AgCl. Simultaneously, the high photocurrent density described the high production rate of valuable fuels or chemicals. A photoelectrocatalyst from a facile fabrication could potentially produce methanol from the reduction of CO2 with reference to the performance of the photocurrent generation. Therefore, a photoelectrocatalyst with high performance in photocurrent could become promising in CO2 reduction. This study demonstrated that rGO-CuO/Cu is a potential semiconductor-based photoelectrode to convert CO2 into methanol.

III-nitride quantum dot (QD) lasers have potential applications in visible light regime, yet one of its most important dynamic parameters, the linewidth enhancement factor (LEF), has been rarely studied. We studied the LEF of InGaN QD lasers with a comprehensive theory model and found that the LEF values of InGaN QD lasers can be smaller and more robust against inhomogeneous broadening than those of InGaAs QD lasers. In addition, the LEF improvement from quantum well to QD in III-nitride semiconductors is much larger than that in III-arsenide. It is believed that the large confinement energy in III-nitrides and atomic-like density of states of QDs contribute to these advantages of III-nitride QD lasers. Our results not only reveal the advantages of using III-nitride QD for high spectral purity, low-chirp laser applications, but also provide a general guideline for designing QD lasers with lower LEF values in various semiconductor materials.

In this work, we demonstrated that the co-crystallization strategy has offered an efficient and promising alternative route to achieve high-performance n-type semiconductors through charge-transport switching from pristine p-type systems. By using a simple “green synthesis” process through molecular “doping” with F4TCNQ into a p-type planar azaacene derivative TMIQ (0.27 cm2 V−1 s−1) host, charge transport characteristic switching occurs with a high electron mobility of 0.12 cm2 V−1 s−1 under atmospheric conditions obtained for the D–A complex TMF4TQ (cocrystal). The reasons for such switching lie in the ingenious energy level and molecular packing arrangement tailoring. Specifically, the insertion of F4TCNQ molecules has led to packing transformation from herringbone stacking (TMIQ) to a dense 2D brick arrangement and the low-lying LUMO levels (−4.55 eV) aligned to gold electrodes, thereby facilitating efficient electron injection and transport, and ensuring the air-stable nature, which is further confirmed using theoretical calculations. We believe that our work would provide new insights into high-performance air-stable n-type organic semiconductors exploration.

Since the discovery of graphene, two-dimensional (2D) semiconductors have been attracted intensive interest due to their unique properties. They have exhibited potential applications in next generation electronic and optoelectronic devices. However, most of the 2D semiconductor are known to suffer from the ambient oxidation which degrade the materials and therefore hinder us from the intrinsic materials’ properties and the optimized performance of devices. In this review, we summarize the recent progress on both fundamentals and applications of the oxidations of 2D semiconductors. We begin with the oxidation mechanisms in black phosphorus, transition metal dichalcogenides and transition metal monochalcogenides considering the factors such as oxygen, water, and light. Then we show the commonly employed passivation techniques. In the end, the emerging applications utilizing controlled oxidations will be introduced.

An efficient continuous-wave (CW) mid-infrared laser with a tunable wavelength range from 3 to 4.5 μm is demonstrated by using intracavity optical parametric oscillator (ICOPO). An optically pumped semiconductor laser (OPSL) is applied as the parent pumped laser gain medium to eliminate self-modulation effect caused by Nd-doped gain medium with ICOPO for fulfilling true CW emissions. Simultaneously, the OPSL gain chip with flip-chip packaging method can avoid mode hopping resulted from internal heat spreader etalon when strong depletion in ICOPO was achieved. The diode pump criteria of the OPSL is first investigated to prevent thermal roll over. By observing the spectral and temporal dynamics of the parent pumped OPSL with and without OPO operation, the true CW and mode-hop-free quality of the laser is verified. A low diode pump threshold of 2.67 W is obtained for the mid-IR idler emission and a total extracted idler power is 250 mW at a diode pump power of 8 W. Finally, the wavelength tunability is confirmed by adjusting the horizontal location of the multiple channel MgO:PPLN crystal, which indicated the feasibility of practical application in such a compact configuration.

Converting mechanical deformation from surrounding environment into detectable electrical signals remains one of the most attractive fields due to its potential applications in sustainable energy harvesting, self-powered sensors, and others. Presently, deformation energy is harvested by generating voltage/current through bending/twisting of piezoelectric materials, but its recyclability is limited in number. In contrast, polarization is generated in all known insulators/semiconductors due to elastic strain gradient, which offers unique electromechanical coupling and in turn, could generate significant potential differences to drive charge transfer. Here, we demonstrate that extremely high direct current with density of 28 × 106 A m−2 is generated without need of any external power supply by applying pointed force using conductive-atomic force microscope (cAFM) tip on multilayer graphene/substrate (SiO2, Si, glass). Further, the ramp-dependent time-resolved current is measured at a localized point, which indicates that pointed force-induced flexoelectric potential differences are the main driving factor to utilize mechanoelectrical coupling and in turn generate high current density. This research work provides a new strategy to utilize the flexoelectric effect to utilize electromechanical coupling to generate giant energy harvesting, which will have a potential impact on the various multiple fields including smart devices, materials, and even a fundamental understanding of physics.

The optoelectronic properties of a selected group of Cu-III-VI2 chalcopyrites-based materials are deeply investigated by using the modified Becke-Johnson (mBJ) potential, combined with DFT + U approach. The obtained results are further used to calculate these materials’ theoretical efficiency limit for solar cell applications. The bandgap findings indicate a reliable ±0.2 eV agreement. After evaluating the electronic and optical properties, the spectroscopic limited maximum efficiency (SLME) model was used as a metric for the screening. Besides the bandgap value considered in the Shockley–Queisser model, the SLME requires that the absorption spectra, the radiative recombination losses, and the absorber layer thickness must be considered to adequately calculate the efficiency of considered cells. Our findings unveil that some candidates, such as CuInS2, where an SLME of 30.25% is achieved at a film width of 500 nm can be classified in the category of materials with higher power conversion efficiency.

In this study, a tunable in-series multi-wavelength distributed feedback laser array (DFB-MLA) based on reconstruction-equivalent-chirp (REC) technique with simple wavelength tuning scheme is presented and experimentally demonstrated. Unlike traditional DFB laser tuned by thermal-electric cooler (TEC), the proposed laser tuned by injection current can realize faster wavelength-tuning and reduce TEC power consumption. By comparing the thermal influence of different structures of heatsink blocks, several optimized block structures are selected for appropriate thermal conductivity and controllable heat dissipation, resulting in a broad and continuous wavelength tuning range. The proposed in-series DFB-MLA on optimized heatsink achieves better tuning performance with a wavelength tuning range of ~2.4 nm per channel from 40 to 120 mA and stable output power of over 20 mW compared to the laser mounted on the standard heatsink block with the tuning range of 1.4 nm per channel. Furthermore, the tunable laser keeps good single-mode stability, with a side mode suppressing ratio (SMSR) of over 40 dB. Thus, this study provides a new perspective for designing a low-cost continuous tunable semiconductor laser with a simple tuning mechanism in the future.

In this paper, ferric oxide nanoparticles) Fe2O3 NPs( were synthesized directly on a quartz substrate in vacuum by pulse laser deposition technique using Nd:YAG laser at different energies (171, 201,363 mJ/pulse). The slides were then heated to 700o C for 1 hour. The structural, optical, morphological, and electrical properties were studied. The optical properties indicated that the prepared thin films have an energy gap ranging from 2.28 to 2.04 eV. The XRD results showed no lattice impurities for other iron oxide phases, confirming that all particles were transformed into the α-Fe2O3 phase during the heating process. The AFM results indicated the dependence of nanoparticles size on the laser energy. As the laser energy increased, the average grain size increased from 72.6 nm to 79.02 nm. Hall effect measurement indicated that the film was an n-type semiconductor.

The quadratic optical nonlinearity arising from two-photon absorption provides the crucial spatial concentration of optical excitation in three-dimensional (3D) laser nanoprinting, with widespread applications in technical and life sciences. Femtosecond lasers allow for obtaining efficient two-photon absorption but are accompanied by a number of issues, including higher-order processes, cost, reliability and size. Here we introduce two-step absorption replacing two-photon absorption as the primary optical excitation process. Under suitable conditions, two-step absorption shows the same quadratic optical nonlinearity as two-photon absorption. We present a photoresist system based on a photoinitiator supporting two-step absorption, a scavenger and a well-established triacrylate. We show that this system allows for printing state-of-the-art 3D nanostructures and beyond. In these experiments, we use ~100 μW optical power from an inexpensive, compact continuous-wave semiconductor laser diode emitting at 405 nm wavelength. Our work opens the door to drastic miniaturization and cost reduction of 3D laser nanoprinters. As an alternative to high-resolution fabrication by two-photon absorption, researchers demonstrate a two-step absorption process that employs inexpensive light sources.

We have developed a simple and straightforward way to realize controlled postdoping toward 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic-energy dopant beams and a high-flux chalcogen beam simultaneously, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. The electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change and p-type action with more than 2 orders of magnitude increase in current. Position-selective doping has also been demonstrated by the postdoping toward TMDs with a patterned mask on the surface. The postdoping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.

The design of photocatalysts with hierarchical pore sizes is an effective method to improve mass transport, enhance light absorption, and increase specific surface area. Moreover, the construction of a heterojunction at the interface of two semiconductor photocatalysts with suitable band positions plays a crucial role in separating and transporting charge carriers. Herein, ZIF-8 and urea are used as precursors to prepare hierarchically porous ZnO/g-C3N4 S-scheme heterojunction photocatalysts through a two-step calcination method. This S-scheme heterojunction photocatalyst shows high activity toward photocatalytic H2O2 production, which is 3.4 and 5.0 times higher than that of pure g-C3N4 and ZnO, respectively. The mechanism of charge transfer and separation within the S-scheme heterojunction is studied by Kelvin probe, in situ irradiated X-ray photoelectron spectroscopy (ISI-XPS), and electron paramagnetic resonance (EPR). This research provides an idea of designing S-scheme heterojunction photocatalysts with hierarchical pores in efficient photocatalytic hydrogen peroxide production.

While two-dimensional (2D) hexagonal boron nitride (h-BN) is emerging as an atomically thin and dangling bond-free insulating layer for next-generation electronics and optoelectronics, its practical implementation into miniaturized integrated circuits has been significantly limited due to difficulties in large-scale growth directly on epitaxial semiconductor wafers. Herein, the realization of a wafer-scale h-BN van der Waals heterostructure with a 2 in. AlGaN/GaN high-electron mobility transistor (HEMT) wafer using metal-organic chemical vapor deposition is presented. The combination of state-of-the-art microscopic and spectroscopic analyses and theoretical calculations reveals that the heterointerface between ∼2.5 nm-thick h-BN and AlGaN layers is atomically sharp and exhibits a very weak van der Waals interaction without formation of a ternary or quaternary alloy that can induce undesired degradation of device performance. The fabricated AlGaN/GaN HEMT with h-BN shows very promising performance including a cutoff frequency (fT) and maximum oscillation frequency (fMAX) as high as 28 and 88 GHz, respectively, enabled by an effective passivation of surface defects on the HEMT wafer to deliver accurate information with minimized power loss. These findings pave the way for practical implementation of 2D materials integrated with conventional microelectronic devices and the realization of future all-2D electronics.

ConspectusHalide perovskites have attracted considerable attention as emerging semiconductors because of their excellent optical and electronic properties, low cost, and facile processing, which en...

This present work is about simulating and analysing a Vertical Cavity Surface Emitting Laser (VCSEL) structure used in optical fibre communication systems. In this paper a VCSEL structure made of seven Quantum Wells of Indium Gallium Arsenide Phosphide (InGaAsP) emitting at 1550 nm is simulated. The device is analysed looking at the following characteristics: Direct current current and voltage (IV) characteristics, light power against electrical bias, optical gain against electrical bias, light distribution over the structure, output power and threshold current. Specification of material characteristics, ordinary physical models settings, initial VCSEL biasing, mesh declarations, declaration of laser physical models, their optical and electrical parameters were defined using Atlas syntax. Mirror ratings and quantum wells are the two main parameters that were studied and analysed to come up with structure trends. By determining important device parameters such as proper selection of the emission wavelength and choice of material; a VCSEL with an output power of 9.5 mW was simulated and compared with other structures.

To rationally design and synthesize organic semiconductor materials and optimize the printing processes of semiconductor films, it is necessary to understand the charge transport behavior of inkjet-printed organic semiconductor films. Herein, the temperature and gate-bias-dependent charge transport behaviors in a polymer field-effect transistor (PFET) were studied. The PFET used a poly[(tetryldodecyloctathiophene-alt-didodecylbithiazole)-co-(tetryldodecylhexathiophene-alt-didodecylbithiazole)] (P(8T2Z-co-6T2Z)-12) polymer film formed by inkjet printing as the active channel layer. The temperature-dependent mobility curves of the PFET measured under various gate-bias conditions fit well with the multiple trap and release (MTR) model and polaron hopping transport model (PHM) at temperatures below and above 250 K, respectively. The charge transport behaviors in the inkjet-printed P(8T2Z-co-6T2Z)-12 film were revealed through a combination of the MTR model and PHM. At temperatures below 250 K, charge carriers were negligibly affected by lattice vibration and required a low activation energy to move from site to site. In contrast, at temperatures above 250 K, charge carriers gradually coupled with phonons under the influence of lattice vibration and thus required a relatively higher activation energy. The insight into charge transport obtained through this study would provide practical benefits for the development of organic electronic device design and fabrication.

A one-step sol–gel method for SrSnO3 nanoparticle synthesis and the incorporation of multi-walled carbon nanotubes (MWCNTs) to produce a SrSnO3@MWCNT photocatalyst is presented. The incorporation of MWCNTs results in enhancement of structural, optical, and optoelectrical properties of SrSnO3. The optimized 3.0% addition of MWCNTs results in light absorption enhancement and a reduction of the band gap from 3.68 to 2.85 eV. Upon application of the photocatalyst in the photocatalytic hydrogen production reaction, SrSnO3@MWCNT-3.0% yields 4200 μmol g–1 of H2 in just 9 h with the use of 1.6 g L–1 of the photocatalyst. SrSnO3@MWCNT exhibits remarkable chemical and photocatalytic stability upon regeneration. Enhanced photocatalytic ability is attributed to improved surface properties and charge-carrier recombination suppression induced by the MWCNT addition. This study highlights the remarkable improvements in chemical and physical properties of semiconductors with MWCNT incorporation.

Two-dimensional materials have attracted great attention for their outstanding electronic properties. In particular, molybdenum disulfide (MoS2) shows great potential as a next-generation semiconductor due to its tunable direct bandgap with a high on-off ratio and extraordinary stability. However, the performance of MoS2 synthesized by physical vapor deposition has been limited by contact resistance between an electrode and MoS2, which determines overall device characteristics. Here, in order to reduce the contact resistance, we use in situ sulfurization of Mo by H2S gas treatment masked by a patterned graphene gas barrier, so that the Mo channel area can be selectively formed, resulting in a gradual edge contact between Mo and MoS2. Compared with field-effect transistors with a top contact between the Au/Ti electrode and the MoS2 channel, a gradual edge contact between the Mo electrode and the MoS2 channel provides a considerably enhanced electrical performance.

Air batteries are promising energy storage technologies that have gained continuous attraction due to their high energy densities. At present, investigations on anodes of air batteries are usually focused on various metals such as Li, Zn, Al. In contrast, the semiconductor anodes like Si and Ge are less investigated. Si-air battery possesses a high theoretical energy density and Ge-air battery has a high actual power density and ideal safety. Besides anodes, air cathodes where oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) are also the key components in air batteries. To further promote the discharging performance and facilitate energy conversion/storage, semiconductor materials have been introduced in electrochemical cells like Li-O2 and Zn-air batteries. This review briefly summarizes semiconductor materials utilized in various air batteries, including the progress of Si-air and Ge-air batteries and recent advances in semiconductor cathodes catalysts. Finally, the remaining challenges and further perspective are discussed.

A modular approach to underexplored, unsymmetrical [1]benzothieno[3,2-b][1]benzothiophene (BTBT) scaffolds delivers a library of BTBT materials from readily available coupling partners by combining a transition-metal free Pummerer CH–CH-type cross-coupling and a Newman–Kwart reaction. This effective approach to unsymmetrical BTBT materials has allowed their properties to be studied. In particular, tuning the functional groups on the BTBT scaffold allows the solid-state assembly and molecular orbital energy levels to be modulated. Investigation of the charge transport properties of BTBT-containing small-molecule:polymer blends revealed the importance of molecular ordering during phase segregation and matching the highest occupied molecular orbital energy level with that of the semiconducting polymer binder, polyindacenodithiophene-benzothiadiazole (PIDTBT). The hole mobilities extracted from transistors fabricated using blends of PIDTBT with phenyl or methoxy functionalized unsymmetrical BTBTs were double those measured for devices fabricated using pristine PIDTBT. This study underscores the value of the synthetic methodology in providing a platform from which to study structure–property relationships in an underrepresented family of unsymmetrical BTBT molecular semiconductors., A modular approach to underexplored, unsymmetrical [1]benzothieno[3,2-b][1]benzothiophene (BTBT) scaffolds, combining a transition-metal free Pummerer CH–CH-type cross-coupling and a Newman–Kwart reaction, delivers a library of BTBT materials.

The temperature-dependent (T-dependent) linewidth (ΓG) and frequency shift (ΔωG) of the G mode provide valuable information on the phonon anharmonicity of graphene-based materials. In contrast to the negligible contribution from electron-phonon coupling (EPC) to the linewidth of a Raman mode in semiconductors, ΓG in pristine graphene is dominated by EPC contribution at room temperature due to its semimetallic characteristics. This leads to difficulty in resolving intrinsic contribution from phonon anharmonicity to ΓG. Here, we probed the intrinsic phonon anharmonicity of heavily-doped graphene by T-dependent Raman spectra based on FeCl3-based stage-1 graphite intercalation compound (GIC), in which the EPC contribution is negligible due to the large Fermi level (EF) shift. The ΔωG and ΓG exhibit a nonlinear decrease and noticeable broadening with increasing temperature, respectively, which are both dominated by phonon anharmonicity processes. The contribution of phonon anharmonicity to ΓG of heavily-doped graphene decreases as the EF approaches to the Dirac point. However, the T dependence of ΔωG is almost independent on EF and qualitatively agrees with the theoretical result of pristine graphene. These results provide a deeper understanding of the role of phonon anharmonicity on the Raman spectra of heavily doped graphene.

Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and further scaling their gate length down to the sub-10 nm region is becoming extremely difficult. Benefitting from the atomic-scale thickness and dangling-bond-free flat surface, two-dimensional semiconductors (2DSCs) have good electrostatics and carrier transportability. The FETs based on the 2DSC channel have the potential to scale the FETs’ gate length down to the sub-10 nm region while avoiding apparent degradation of the device performance. In this review, we introduce the recent experimental and ab initio quantum transport simulation progress in the 2D FETs with a gate length less than 10 nm. Remarkably, in the extremely optimistic condition, many 2D FETs (i.e phosphorene, silicane, arsenene, tellurene, WSe2, InSe, Bi2O2Se, GeSe, etc.) show excellent device performance for the high performance and/or low power applications and indeed can extend Moore’s law down to 1 ∼ 2-nm gate length in terms of the ab initio quantum transport simulation. The sub-10 nm 2D tunneling FETs are predicted to generally have smaller energy-delay products compared with the 2D metal–oxide–semiconductor FETs and appear more competitive for the low power application. The carrier effective mass plays a key role in determining the device performance. Via negative capacitance techniques, the device performance can be further improved. Finally, we outline the challenges and outlook on the future development directions in the sub-10 nm 2D FETs.

Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, SnO channel with a thickness of ∼1 nm, which was grown by a vacuum-free, solvent-free, metal-liquid printing process at low temperatures, as low as 250 °C in an ambient atmosphere. By performing oxygen-vacancy defect termination for the bulk-channel and back-channel surface of the ultrathin SnO channel, the presented p-channel SnO TFT exhibited good device performances with a reasonable TFT mobility of ∼0.47 cm2 V-1 s-1, a high on/off current ratio of ∼106, low off current of

Exploring materials with multiple properties who can endow a simple device with integrated functionalities has attracted enormous attention in the microelectronic field. One reason is the imperious demand for processors with continuously higher performance and totally new architecture. Combining ferroelectric with semiconducting properties is a promising solution. Here, we show that logic, in-memory computing, and optoelectrical logic and non-volatile computing functionalities can be integrated into a single transistor with ferroelectric semiconducting α-In2Se3 as the channel. Two-input AND, OR, and non-volatile NOR and NAND logic operations with current on/off ratios reaching up to five orders, good endurance (1000 operation cycles), and fast operating speed (10 μs) are realized. In addition, optoelectrical OR logic and non-volatile implication (IMP) operations, as well as ternary-input optoelectrical logic and in-memory computing functions are achieved by introducing light as an additional input signal. Our work highlights the potential of integrating complex logic functions and new-type computing into a simple device based on emerging ferroelectric semiconductors.

Amorphous oxide-based thin-film transistors (TFTs) have been applied to display and various next-generation applications. The amorphous oxide thin film has exhibited a higher electrical mobility and stability characteristics in recent decades. A multilayer thin-film structure has been fabricated and analyzed using amorphous Si-In-Zn-O (a-SIZO) and amorphous Si-Zn-Sn-O (a-SZTO) materials. The a-SIZO had a current value of more than 10−3 A without OFF-current (like metal) when fabricated as a single layer of thin film. The fabricated bilayer TFT shows an improved field effect mobility upon inserting the a-SIZO conductive semiconductor layer at the bottom. With the aforementioned architecture, we have achieved a mobility that is higher than 160 cm2/ $\text{V}\cdot \text{s}$ with a ${V}_{\textit {th}}$ shift of 1.19 V under negative bias temperature stress (NBTS) for an amorphous-based semiconducting multilayer TFT.

In this letter, the triggering efficiency of 1-mm-gap, opposed-contact GaAs Photoconductive Semiconductor Switch (PCSS) is studied in avalanche mode. Compared with the anode-triggered PCSSs, it is found that the cathode-triggered devices are with shorter delay time and lower on-state resistance under the same operation conditions. The delay time jitter of ~45.6 ps is also achieved at the power level of $\sim 4$ MW by cathode triggering. Then the theory of multiple avalanche domains is introduced to interpret the influence of laser spot location on triggering efficiency by a two-dimensional (2D) device simulation. The delay time and on-state resistance are essentially attributed to the formation time and the density of avalanche domains which are affected by the triggering position.

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge0.9Sn0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

Cadmium sulfide (CdS) is an II–VI semiconductor with a direct bandgap of 2.4 eV; it has been used for various applications, such as nonlinear optical devices, flat-panel displays, light-emitting diodes, lasers, logic gates, transistors, photoresistors, solar cells, infrared waveguides, and splitters. CdS nanostructures have been synthesized through two different routes: (1) vapor-phase growth and (2) liquid-phase growth. The vapor-phase growth system can yield highly pure single-crystal nanostructures, and liquid-phase growth has been carried out through chemical or electrochemical reactions in solution with templates. The fabricated nanostructures of CdS showed a relatively low work function, high refractive index, excellent transport properties, good chemical capability, thermal stability, high electronic mobility, and piezoelectric properties. For these reasons, CdS photosensors have been produced using various nanostructures of CdS, such as nanorods, nanoribbons, and nanowires. For the fabrication of CdS nanowire photosensors, many different approaches have been demonstrated to connect nanostructures in devices and circuits using various techniques, such as dry transfer, wet transfer, and contact printing. Each method has practical advantages and drawbacks in the implementation of nanostructures in devices. In this article, the synthesis of CdS nanostructures and the fabrication of photosensors based on the CdS nanostructures are reviewed.

In this paper, we experimentally studied the effects of optical power of semiconductor laser on the electrical properties of silicon diode of an exposed device. The experimental results showed that the laser diode light of different optical powers (2, 3, and 4 mW) had effects on the silicon diode that are somewhat similar to those of thermal treatment. A shift in the current-voltage curve to the left side was also noticed, which led to a non-linear decrease of the barrier voltage of the diode by the effect of laser light. We also reveal a decrease by 344.8 nA/mW in the reverse saturation current of the silicon diode as a result of exposure to laser light. The forward resistance of the silicon diode decreased with increased incident optical power. The value of the maximum current of diode increased by 0.5 A/W with increasing the optical power incident on the diode.

A new type of two-dimensional (2D) SnO2 semiconductor-based gate-tunable memristor, that is, a memtransistor, an integrated device of a memristor and a transistor, was demonstrated to advance next-generation neuromorphic computing technology. The polycrystalline 2D-SnO2 memristors derived from a low-temperature and vacuum-free liquid metal process offer several interesting resistive switching properties such as excellent digital/analog resistive switching, multistate storage, and gate-tunability function of resistance switching states. Significantly, the gate tunability function that is not achievable in conventional two-terminal memristors provides the capability to implement heterosynaptic analog switching by regulating gate bias for enabling complex neuromorphic learning. We successfully demonstrated that the gate-tunable synaptic device dynamically modulated the analog switching behavior with good linearity and an improved conductance change ratio for high recognition accuracy learning. The presented gate-tunable 2D-oxide memtransistor will advance neuromorphic device technology and open up new opportunities to design learning schemes with an extra degree of freedom.

SiOx is an important dielectric material layer for resistive switching memory due to its compatibility with complementary metal-oxide semiconductor (CMOS) technology. Here we propose a solution process for a SiOx dielectric layer based on perhydropolysilazane (PHPS). A series of SiOx layers with different compositions are prepared by controlling the conversion process from PHPS, then the resistance switching behaviors of typical Ag/SiOx/Au memristors are analyzed. The effect of oxygen vacancies and Si-OH groups on the formation and rupture of Ag conducting filaments (CFs) in the SiOx layer was thoroughly investigated. Ultimately, we achieved a high-performance memristor with a coefficient of variation (σ/μ) as low as 0.16 ± 0.08 and an on/off ratio as high as 106, which can rival the performance of the SiOx memristors based on the high-vacuum and high-cost vapor deposition methods. These findings demonstrate the high promise of the PHPS-derived SiOx dielectric layer in the field of memristors.

The coupling of transition metal dichalcogenides (TMDs) and other materials offers significant synergistic effects; however, the fabrication of artificial multiheterojunction (MHJ) TMDs is a signif...

Laser frequency stabilization is one of the key technologies in atomic physics experimental system. In this paper, the basic principles, and features and the latest research progress on various kinds of semiconductor laser, active frequency stabilization techniques based on different locking reference standards are systematically described, and their practical applications in different fields are briefly overviewed. Finally, we provide a prospective development trends for semiconductor laser, active frequency stabilization technologies.

The bottom-up approach to directly synthesizing low-dimensional materials with outstanding performance has extended the material basis for the next generation integrated circuit industry. All the low-dimensional semiconductors, metals, dielectrics, and their heterojunctions are very promising bricks to build faster and more efficient chips because of their atomically smooth surface and interfaces. The greatest challenge in the synthesis of nanomaterials is how to precisely control the structure, crystalline orientation, defects, dimensions, etc. In past decades, both the methodology and the mechanism of synthesis have been systematically investigated to improve the controllability. However, few studies focused on sensing the synthesis processes in situ and responding to the synthesis immediately. Here, we propose the concept of intelligent synthesis in which the final product can be automatically fine-controlled by a closed loop including in situ monitoring and real-time interventions. As a model system, a high-temperature-tolerant circuit is fabricated on the single-walled carbon nanotube (SWCNT) growth substrate for sensing and responding to the synthesis processes. As a result, either highly pure semiconducting (s-) SWCNT arrays or metallic-semiconducting (m-s) junction arrays with different junction positions is simply synthesized by programming the responding signal. The intelligent synthesis shows much higher efficiency and controllability compared to conventional methods and will lead to the next leap in nanotechnology.

In this work, we investigate material design criteria for low-powered/self-powered and efficient organic electrochemical transistors (OECTs) to be operated in the faradaic mode (detection at the gate electrode occurs via electron transfer events). To rationalize device design principles, we adopt a Marcus-Gerischer perspective for electrochemical processes at both the gate and channel interfaces. This perspective considers density of states (DOS) for the semiconductor channel, the gate electrode, and the electrolyte. We complement our approach with energy band offsets of relevant electrochemical potentials that can be independently measured from transistor geometry using conventional electrochemical methods as well as an approach to measure electrolyte potential in an operating OECT. By systematically changing the relative redox property offsets between the redox-active electrolyte and semiconducting polymer channel, we demonstrate a first-order design principle that necessary gate voltage is minimized by good DOS overlap of the two redox processes at the gate and channel. Specifically, for p-type turn-on OECTs, the voltage-dependent, electrochemically active semiconductor DOS should overlap with the oxidant form of the electrolyte to minimize the onset voltage for transconductance. A special case where the electrolyte can be used to spontaneously dope the polymer via charge transfer is also considered. Collectively, our results provide material design pathways toward the development of simple, robust, power-saving, and high-throughput OECT biosensors.

Radiation hardness is important for electronics operating in harsh radiation environments such as outer space and nuclear energy industries. In this work, radiation-hardened solution-processed ZrLaO thin films are demonstrated. The radiation effects on solution-processed ZrLaO thin films and InOx/ZrLaO thin-film transistors (TFTs) were systemically investigated. The Zr0.9La0.1Oy thin films demonstrated excellent radiation hardness with negligible roughness, composition, electrical property, and bias-stress stability degradation after radiation exposure. The metal-oxide-semiconductor capacitors (MOSCAPs) based on Zr0.9La0.1Oy gate dielectrics exhibited an ultralow flat band-voltage (VFB) sensitivity of 0.11 mV/krad and 0.19 mV/krad under low dose and high dose gamma irradiation conditions, respectively. The low dose condition had a 103 krad (SiO2) total dose and a 0.12 rad/s low dose rate, whereas the high dose condition had a 580 krad total dose and a 278 rad/s high dose rate. Furthermore, InOx/Zr0.9La0.1Oy thin-film transistors (TFTs) exhibited a large Ion/Ioff of 2 × 106, a small subthreshold swing (SS) of 0.11 V/dec, a small interface trap density (Dit) of 1 × 1012 cm-2, and a 0.16 V threshold shift (ΔVTH) under 3600 s positive bias-stress (PBS). InOx/Zr0.9La0.1Oy TFT-based resistor-loaded inverters demonstrated complete swing behavior, a static output gain of 13.3 under 4 V VDD, and an ∼9% radiation-induced degradation. Through separate investigation of the radiation-induced degradation on the semiconductor layer and dielectric layer of TFTs, it was found that radiation exposure mainly generated oxygen vacancies (Vo) and increased electron concentration among gate oxide. Nevertheless, the radiation-induced TFT instability was mainly related to the semiconductor layer degradation, which could be possibly suppressed by back-channel passivation. The demonstrated results indicate that solution-processed ZrLaO is a high-potential candidate for large-area electronics and circuits applied in harsh radiation environments. In addition, the detailed investigation of radiation-induced degradation on solution-processed high-k dielectrics in this work provided clear inspiration for developing novel flexible rad-hard dielectrics.